KR900002085B1 - 미세패턴 형성방법 - Google Patents

미세패턴 형성방법 Download PDF

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Publication number
KR900002085B1
KR900002085B1 KR1019860008630A KR860008630A KR900002085B1 KR 900002085 B1 KR900002085 B1 KR 900002085B1 KR 1019860008630 A KR1019860008630 A KR 1019860008630A KR 860008630 A KR860008630 A KR 860008630A KR 900002085 B1 KR900002085 B1 KR 900002085B1
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KR
South Korea
Prior art keywords
etching
pattern
predetermined
mask
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860008630A
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English (en)
Korean (ko)
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KR870004495A (ko
Inventor
이사히로 하세가와
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
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Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR870004495A publication Critical patent/KR870004495A/ko
Application granted granted Critical
Publication of KR900002085B1 publication Critical patent/KR900002085B1/ko
Expired legal-status Critical Current

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    • H10P50/694—
    • H10P50/691—
    • H10P50/242—
    • H10P50/267—
    • H10P50/693—
    • H10P50/71—
    • H10W20/063—

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019860008630A 1985-10-16 1986-10-15 미세패턴 형성방법 Expired KR900002085B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-230356 1985-10-16
JP60230356A JPS6289331A (ja) 1985-10-16 1985-10-16 微細パタ−ンの加工方法

Publications (2)

Publication Number Publication Date
KR870004495A KR870004495A (ko) 1987-05-09
KR900002085B1 true KR900002085B1 (ko) 1990-03-31

Family

ID=16906577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860008630A Expired KR900002085B1 (ko) 1985-10-16 1986-10-15 미세패턴 형성방법

Country Status (3)

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EP (1) EP0219100A3 (enExample)
JP (1) JPS6289331A (enExample)
KR (1) KR900002085B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701032A (nl) * 1987-05-01 1988-12-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met interconnecties die zowel boven een halfgeleidergebied als boven een daaraan grenzend isolatiegebied liggen.
FR2634322A1 (fr) * 1988-07-13 1990-01-19 Thomson Csf Module semi-conducteur actif hybride obtenu par reconfiguration physique de pastilles, interconnectees par films minces, et procede de fabrication correspondant
JPH0830370B2 (ja) * 1990-08-15 1996-03-27 鹿島建設株式会社 耐震壁の構築方法
JP2658609B2 (ja) * 1991-03-01 1997-09-30 日本電気株式会社 半導体装置
FR2681958A1 (fr) * 1991-10-01 1993-04-02 France Telecom Dispositif comportant un modele configure par photogravure, notamment circuit electrique.
JPH07106327A (ja) * 1993-10-06 1995-04-21 Toshiba Corp 半導体装置及びその製造方法
US5589706A (en) * 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures
JP4572096B2 (ja) * 2004-08-02 2010-10-27 Ｎｅｃ液晶テクノロジー株式会社 積層金属膜パターン形成方法
JP2013201168A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 被ダイシング材料、レジスト層形成装置
JP2015046459A (ja) * 2013-08-28 2015-03-12 ソニー株式会社 エッチング方法、電子デバイスの製造方法および偏光板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS59115541A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
EP0229104A1 (en) * 1985-06-28 1987-07-22 AT&T Corp. Procedure for fabricating devices involving dry etching

Also Published As

Publication number Publication date
EP0219100A3 (en) 1988-06-22
KR870004495A (ko) 1987-05-09
JPS6289331A (ja) 1987-04-23
JPH0471334B2 (enExample) 1992-11-13
EP0219100A2 (en) 1987-04-22

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