JPH0471334B2 - - Google Patents

Info

Publication number
JPH0471334B2
JPH0471334B2 JP60230356A JP23035685A JPH0471334B2 JP H0471334 B2 JPH0471334 B2 JP H0471334B2 JP 60230356 A JP60230356 A JP 60230356A JP 23035685 A JP23035685 A JP 23035685A JP H0471334 B2 JPH0471334 B2 JP H0471334B2
Authority
JP
Japan
Prior art keywords
film
etched
pattern
mask material
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60230356A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6289331A (ja
Inventor
Isahiro Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60230356A priority Critical patent/JPS6289331A/ja
Priority to EP86114222A priority patent/EP0219100A3/en
Priority to KR1019860008630A priority patent/KR900002085B1/ko
Publication of JPS6289331A publication Critical patent/JPS6289331A/ja
Publication of JPH0471334B2 publication Critical patent/JPH0471334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/694—
    • H10P50/691—
    • H10P50/242—
    • H10P50/267—
    • H10P50/693—
    • H10P50/71—
    • H10W20/063—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60230356A 1985-10-16 1985-10-16 微細パタ−ンの加工方法 Granted JPS6289331A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60230356A JPS6289331A (ja) 1985-10-16 1985-10-16 微細パタ−ンの加工方法
EP86114222A EP0219100A3 (en) 1985-10-16 1986-10-14 Method of forming a fine pattern
KR1019860008630A KR900002085B1 (ko) 1985-10-16 1986-10-15 미세패턴 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60230356A JPS6289331A (ja) 1985-10-16 1985-10-16 微細パタ−ンの加工方法

Publications (2)

Publication Number Publication Date
JPS6289331A JPS6289331A (ja) 1987-04-23
JPH0471334B2 true JPH0471334B2 (enExample) 1992-11-13

Family

ID=16906577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60230356A Granted JPS6289331A (ja) 1985-10-16 1985-10-16 微細パタ−ンの加工方法

Country Status (3)

Country Link
EP (1) EP0219100A3 (enExample)
JP (1) JPS6289331A (enExample)
KR (1) KR900002085B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701032A (nl) * 1987-05-01 1988-12-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met interconnecties die zowel boven een halfgeleidergebied als boven een daaraan grenzend isolatiegebied liggen.
FR2634322A1 (fr) * 1988-07-13 1990-01-19 Thomson Csf Module semi-conducteur actif hybride obtenu par reconfiguration physique de pastilles, interconnectees par films minces, et procede de fabrication correspondant
JPH0830370B2 (ja) * 1990-08-15 1996-03-27 鹿島建設株式会社 耐震壁の構築方法
JP2658609B2 (ja) * 1991-03-01 1997-09-30 日本電気株式会社 半導体装置
FR2681958A1 (fr) * 1991-10-01 1993-04-02 France Telecom Dispositif comportant un modele configure par photogravure, notamment circuit electrique.
JPH07106327A (ja) * 1993-10-06 1995-04-21 Toshiba Corp 半導体装置及びその製造方法
US5589706A (en) * 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures
JP4572096B2 (ja) * 2004-08-02 2010-10-27 Ｎｅｃ液晶テクノロジー株式会社 積層金属膜パターン形成方法
JP2013201168A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 被ダイシング材料、レジスト層形成装置
JP2015046459A (ja) * 2013-08-28 2015-03-12 ソニー株式会社 エッチング方法、電子デバイスの製造方法および偏光板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS59115541A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
EP0229104A1 (en) * 1985-06-28 1987-07-22 AT&T Corp. Procedure for fabricating devices involving dry etching

Also Published As

Publication number Publication date
EP0219100A3 (en) 1988-06-22
KR870004495A (ko) 1987-05-09
KR900002085B1 (ko) 1990-03-31
JPS6289331A (ja) 1987-04-23
EP0219100A2 (en) 1987-04-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term