KR900002080B1 - 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법 - Google Patents

비소화칼륨 단결정 박막의 기상 에피택셜 성장방법 Download PDF

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Publication number
KR900002080B1
KR900002080B1 KR1019860007460A KR860007460A KR900002080B1 KR 900002080 B1 KR900002080 B1 KR 900002080B1 KR 1019860007460 A KR1019860007460 A KR 1019860007460A KR 860007460 A KR860007460 A KR 860007460A KR 900002080 B1 KR900002080 B1 KR 900002080B1
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South Korea
Prior art keywords
carrier concentration
concentration layer
single crystal
layer
growing
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KR1019860007460A
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English (en)
Korean (ko)
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KR870003554A (ko
Inventor
히사노리 후지따
마사아끼 가나야마
Original Assignee
미쓰비시 몬산또 가세이 가부시끼가이샤
구스하라 시로오
미쓰비시 가세이 가부시끼가이샤
스즈끼 세이지
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Application filed by 미쓰비시 몬산또 가세이 가부시끼가이샤, 구스하라 시로오, 미쓰비시 가세이 가부시끼가이샤, 스즈끼 세이지 filed Critical 미쓰비시 몬산또 가세이 가부시끼가이샤
Publication of KR870003554A publication Critical patent/KR870003554A/ko
Application granted granted Critical
Publication of KR900002080B1 publication Critical patent/KR900002080B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
KR1019860007460A 1985-09-09 1986-09-06 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법 Expired KR900002080B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-198904 1985-09-09
JP60198904A JPS6259595A (ja) 1985-09-09 1985-09-09 ひ化ガリウム単結晶薄膜の気相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
KR870003554A KR870003554A (ko) 1987-04-18
KR900002080B1 true KR900002080B1 (ko) 1990-03-31

Family

ID=16398877

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007460A Expired KR900002080B1 (ko) 1985-09-09 1986-09-06 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법

Country Status (3)

Country Link
US (1) US4756792A (https=)
JP (1) JPS6259595A (https=)
KR (1) KR900002080B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275191A (ja) * 1985-05-29 1986-12-05 Furukawa Electric Co Ltd:The ＧａＡｓ薄膜の気相成長法
US4910167A (en) * 1987-11-13 1990-03-20 Kopin Corporation III-V Semiconductor growth initiation on silicon using TMG and TEG
US5145807A (en) * 1988-05-11 1992-09-08 Mitsubishi Kasei Corporation Method of making semiconductor laser devices
JP2701339B2 (ja) * 1988-07-22 1998-01-21 日本電気株式会社 気相成長装置
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
US5834379A (en) * 1996-07-16 1998-11-10 Cornell Research Foundation, Inc. Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process
US5979614A (en) * 1996-09-25 1999-11-09 Nippon Steel Corporation Brake disc produced from martensitic stainless steel and process for producing same
US7214269B2 (en) * 2004-10-15 2007-05-08 Hitachi Cable, Ltd. Si-doped GaAs single crystal substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
US3762945A (en) * 1972-05-01 1973-10-02 Bell Telephone Labor Inc Technique for the fabrication of a millimeter wave beam lead schottkybarrier device
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes
JPS5577131A (en) * 1978-12-06 1980-06-10 Mitsubishi Monsanto Chem Co Vapor phase growth of compound semiconductor epitaxial film
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
JPS57111016A (en) * 1980-12-26 1982-07-10 Mitsubishi Monsanto Chem Co Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer
US4407694A (en) * 1981-06-22 1983-10-04 Hughes Aircraft Company Multi-range doping of epitaxial III-V layers from a single source

Also Published As

Publication number Publication date
JPS6259595A (ja) 1987-03-16
US4756792A (en) 1988-07-12
KR870003554A (ko) 1987-04-18
JPH0510317B2 (https=) 1993-02-09

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