KR900000560B1 - 열처리 방법 - Google Patents

열처리 방법 Download PDF

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Publication number
KR900000560B1
KR900000560B1 KR1019850007292A KR850007292A KR900000560B1 KR 900000560 B1 KR900000560 B1 KR 900000560B1 KR 1019850007292 A KR1019850007292 A KR 1019850007292A KR 850007292 A KR850007292 A KR 850007292A KR 900000560 B1 KR900000560 B1 KR 900000560B1
Authority
KR
South Korea
Prior art keywords
heat treatment
time
temperature
heat
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850007292A
Other languages
English (en)
Korean (ko)
Other versions
KR860004459A (ko
Inventor
히데유끼 테라오카
Original Assignee
다이닛뽄 스크린 세이조오 가부시기가이샤
이시다 토꾸지로오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이닛뽄 스크린 세이조오 가부시기가이샤, 이시다 토꾸지로오 filed Critical 다이닛뽄 스크린 세이조오 가부시기가이샤
Publication of KR860004459A publication Critical patent/KR860004459A/ko
Application granted granted Critical
Publication of KR900000560B1 publication Critical patent/KR900000560B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B9/40—Arrangements of controlling or monitoring devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B9/3077—Arrangements for treating electronic components, e.g. semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
KR1019850007292A 1984-11-26 1985-10-04 열처리 방법 Expired KR900000560B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59248889A JPS61127133A (ja) 1984-11-26 1984-11-26 熱処理方法
JP59-248889 1984-11-26

Publications (2)

Publication Number Publication Date
KR860004459A KR860004459A (ko) 1986-06-23
KR900000560B1 true KR900000560B1 (ko) 1990-01-31

Family

ID=17184950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850007292A Expired KR900000560B1 (ko) 1984-11-26 1985-10-04 열처리 방법

Country Status (3)

Country Link
US (1) US4678432A (enExample)
JP (1) JPS61127133A (enExample)
KR (1) KR900000560B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623935B2 (ja) * 1988-02-09 1994-03-30 大日本スクリーン製造株式会社 再現性を高めた熱処理制御方法
US4846674A (en) * 1988-02-10 1989-07-11 Microdot Inc. Method and apparatus for heating removably attachable heading tool dies
US5273424A (en) * 1990-03-23 1993-12-28 Tokyo Electron Sagami Limited Vertical heat treatment apparatus
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
US5528018A (en) * 1991-08-19 1996-06-18 Henny Penny Corporation Programmable load compensation method and apparatus for use in a food
US5296683A (en) * 1991-08-19 1994-03-22 Henny Penny Corporation Preheating method and apparatus for use in a food oven
US5688422A (en) * 1995-04-28 1997-11-18 Henny Penny Corporation Programmable fan control method and apparatus for use in a food oven
JP3654684B2 (ja) * 1995-05-01 2005-06-02 東京エレクトロン株式会社 処理方法及び処理装置
US6204484B1 (en) * 1998-03-31 2001-03-20 Steag Rtp Systems, Inc. System for measuring the temperature of a semiconductor wafer during thermal processing
US20080314892A1 (en) * 2007-06-25 2008-12-25 Graham Robert G Radiant shield
JP5751235B2 (ja) * 2012-10-19 2015-07-22 トヨタ自動車株式会社 電池用電極の製造方法及び装置
JP7288745B2 (ja) 2018-09-13 2023-06-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7080145B2 (ja) 2018-09-20 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7199888B2 (ja) 2018-09-20 2023-01-06 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
JPS53120075A (en) * 1977-03-30 1978-10-20 Shinku Riko Kk Temperature control device
JPS57147237A (en) * 1981-03-06 1982-09-11 Sony Corp Heat treatment device
JPS5870536A (ja) * 1981-10-22 1983-04-27 Fujitsu Ltd レ−ザアニ−ル方法
WO1983002314A1 (en) * 1981-12-31 1983-07-07 Chye, Patrick, W. Method for reducing oxygen precipitation in silicon wafers

Also Published As

Publication number Publication date
US4678432A (en) 1987-07-07
JPH0230179B2 (enExample) 1990-07-04
KR860004459A (ko) 1986-06-23
JPS61127133A (ja) 1986-06-14

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