KR890013967A - 플라즈마 처리장치 및 플라즈마온도 측정방법 - Google Patents

플라즈마 처리장치 및 플라즈마온도 측정방법 Download PDF

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KR890013967A
KR890013967A KR1019890001928A KR890001928A KR890013967A KR 890013967 A KR890013967 A KR 890013967A KR 1019890001928 A KR1019890001928 A KR 1019890001928A KR 890001928 A KR890001928 A KR 890001928A KR 890013967 A KR890013967 A KR 890013967A
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plasma
nitrogen
recorder
substrate
light emission
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KR1019890001928A
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KR920007850B1 (ko
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신이찌로오 이시하라
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다니이 아끼오
마쓰시다 덴끼 산교오 가부시 가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

플라즈마 처리장치 및 플라즈마온도 측정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 다른 플라즈마처리장치에 대한 개략도.
제2도는 회전온도가 500°K인 경우에 의 계산파형을 도시한 파형도.
제3도는 회전온도가 500°K인 경우에 각각의 P브랜치, Q브랜치, R브랜치에 대한의 계산파형을 도시한 파형도.

Claims (2)

  1. 질소원자들을 함유하는 기체상태 재료를 플라즈마화하기 위한 전원(6) 및 전극(5)과 ； 플라즈마처리실(17)과 ； 상기 플라즈마를 이용한 부식처리 또는 퇴적처리를 받는 기판과 ； 상기기판을 가열하기 위한 전원과 ； 연속발광에 의한 회전양자수간 전이에 기인하는 질소분자의 발광을 검출할 수 있는 분광기(4)와 ； 상기 검출에 의한 측정된 발광을 기록하는 기록기(14)와 ； 상기분광기(4)에 의해 검출되고 기록기(14)에 의해 기록된 데이타를 분광기(4)와 기록기(14) 이외의 상기 구성품들로 궤환시킬 수 있는 제어기(15)로 구성되는것을 특징응로하는 플라즈마 처리장치.
  2. 여러기체온도에서 이론적 질소플라즈마 발광강도를 계산하는 단계와 ； 플라즈마처리실내의 실제 질소플라즈마 발광도를 측정하는 단계와 ； 질소분자에 대한 분해된 발광스펙트럼중에서 파장이 400㎚ 내지 406㎚범위에 있는 첨두스펙트럼에서 상기의 측정된 발광강도와 상기의 계산 된 발광강도를 비교하는 단계와 ； 상기 비교를 통하여, 기판, 기판호울더등과 같은 가열체 또는 국소적 가열원 또는 비정상적 방전에 의해 야기되는 질소기체의 온도상승과 플라즈마를 발생시키기 위한 상기 전원에 의해 야기된 질소기체의 온도상승을 구별하는 단계로 이루어지는 것을 특징으로 하는 플라즈마 온도 측정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001928A 1988-02-18 1989-02-18 플라즈마 처리 장치 및 플라즈마 온도 측정 방법 KR920007850B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-35707 1988-02-18
JP63035707A JPH0610356B2 (ja) 1988-02-18 1988-02-18 プラズマ処理装置およびプラズマ温度測定方法

Publications (2)

Publication Number Publication Date
KR890013967A true KR890013967A (ko) 1989-09-26
KR920007850B1 KR920007850B1 (ko) 1992-09-18

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KR1019890001928A KR920007850B1 (ko) 1988-02-18 1989-02-18 플라즈마 처리 장치 및 플라즈마 온도 측정 방법

Country Status (5)

Country Link
US (1) US4883560A (ko)
EP (1) EP0329179B1 (ko)
JP (1) JPH0610356B2 (ko)
KR (1) KR920007850B1 (ko)
DE (1) DE68925133T2 (ko)

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US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
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US5129994A (en) * 1991-04-23 1992-07-14 Applied Materials, Inc. Method and apparatus to inhibit obstruction of optical transmission through semiconductor etch process chamber viewport
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JP2895683B2 (ja) * 1992-07-30 1999-05-24 住友電気工業株式会社 酸化物超電導膜製造装置
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DE4304613C1 (de) * 1993-02-16 1994-05-26 Fraunhofer Ges Forschung Verfahren zur Stabilisierung der Plasmaerzeugung mittels Elektronenstrahlverdampfer
US5780803A (en) * 1993-02-16 1998-07-14 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Process for the stabilization of plasma generation by means of electron beam vaporizer
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
JP3474602B2 (ja) 1993-05-07 2003-12-08 住友電気工業株式会社 超電導導体
US5326975A (en) * 1993-06-15 1994-07-05 Texas Instruments Incorporated Measurement of gas leaks into gas lines of a plasma reactor
JP3223661B2 (ja) * 1993-08-31 2001-10-29 ソニー株式会社 プラズマ堆積方法
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
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JP2001323376A (ja) * 2000-03-06 2001-11-22 Canon Inc 堆積膜の形成装置
US6538734B2 (en) * 2000-11-29 2003-03-25 Lightwind Corporation Method and device utilizing real-time gas sampling
KR100448871B1 (ko) * 2001-09-21 2004-09-16 삼성전자주식회사 식각 종말점 검출창 및 이를 채용하는 식각 장치
EP1739732A1 (en) * 2004-03-26 2007-01-03 Sekisui Chemical Co., Ltd. Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material
JP5161469B2 (ja) * 2007-03-16 2013-03-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008251866A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置
CN107694588A (zh) * 2016-08-08 2018-02-16 松下电器产业株式会社 光半导体的制造方法、光半导体和制氢装置
KR20230002981A (ko) * 2020-04-24 2023-01-05 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 스펙트럼에 의한 동적 플라즈마 컨디션에서의 프로세스 제어 및 모니터링의 방법

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JPH0722151B2 (ja) * 1984-05-23 1995-03-08 株式会社日立製作所 エツチングモニタ−方法

Also Published As

Publication number Publication date
DE68925133D1 (de) 1996-02-01
DE68925133T2 (de) 1996-08-29
KR920007850B1 (ko) 1992-09-18
JPH01212776A (ja) 1989-08-25
EP0329179A2 (en) 1989-08-23
JPH0610356B2 (ja) 1994-02-09
US4883560A (en) 1989-11-28
EP0329179B1 (en) 1995-12-20
EP0329179A3 (en) 1991-07-24

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