KR890004879B1 - Master-slcie type semiconductor integrated circuit device - Google Patents
Master-slcie type semiconductor integrated circuit deviceInfo
- Publication number
- KR890004879B1 KR890004879B1 KR8405988A KR840005988A KR890004879B1 KR 890004879 B1 KR890004879 B1 KR 890004879B1 KR 8405988 A KR8405988 A KR 8405988A KR 840005988 A KR840005988 A KR 840005988A KR 890004879 B1 KR890004879 B1 KR 890004879B1
- Authority
- KR
- South Korea
- Prior art keywords
- master
- current source
- semiconductor integrated
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/901—Masterslice integrated circuits comprising bipolar technology
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/43—Layouts of interconnections
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58179265A JPS6074455A (ja) | 1983-09-29 | 1983-09-29 | マスタスライス集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR890004879B1 true KR890004879B1 (en) | 1989-11-30 |
Family
ID=16062822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR8405988A Expired KR890004879B1 (en) | 1983-09-29 | 1984-09-28 | Master-slcie type semiconductor integrated circuit device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4748488A (enExample) |
| EP (1) | EP0140584B1 (enExample) |
| JP (1) | JPS6074455A (enExample) |
| KR (1) | KR890004879B1 (enExample) |
| DE (1) | DE3475366D1 (enExample) |
| IE (1) | IE55775B1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2633558B2 (ja) * | 1987-03-30 | 1997-07-23 | 株式会社東芝 | 半導体装置 |
| JP2606845B2 (ja) * | 1987-06-19 | 1997-05-07 | 富士通株式会社 | 半導体集積回路 |
| JPH01278041A (ja) * | 1988-04-30 | 1989-11-08 | Hitachi Ltd | 半導体集積回路装置 |
| KR920005863B1 (ko) * | 1988-08-12 | 1992-07-23 | 산요덴끼 가부시끼가이샤 | 반도체 집적회로 |
| US5168342A (en) * | 1989-01-30 | 1992-12-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and manufacturing method of the same |
| DE69012848T2 (de) * | 1989-02-09 | 1995-03-09 | Sony Corp | Integrierte Halbleiterschaltungsanordnungen. |
| JP2509696B2 (ja) * | 1989-04-26 | 1996-06-26 | 株式会社東芝 | ゲ―トアレ―半導体集積回路装置 |
| JPH03218668A (ja) * | 1989-11-24 | 1991-09-26 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
| US5283753A (en) * | 1991-07-25 | 1994-02-01 | Motorola, Inc. | Firm function block for a programmable block architected heterogeneous integrated circuit |
| US5155390A (en) * | 1991-07-25 | 1992-10-13 | Motorola, Inc. | Programmable block architected heterogeneous integrated circuit |
| US6804809B1 (en) * | 2002-10-30 | 2004-10-12 | Polarfab, Llc | System and method for defining a semiconductor device layout |
| DE10320196A1 (de) * | 2002-12-20 | 2004-07-08 | Henkel Kg Auf Aktien | Bleichmittelhaltige Wasch- oder Reinigungsmittel |
| RU2330878C2 (ru) * | 2002-12-20 | 2008-08-10 | Дегусса Аг | Жидкая композиция моющего и очищающего средства |
| WO2004056954A1 (en) * | 2002-12-20 | 2004-07-08 | Degussa Ag | Coated peroxygen compounds with controlled release, a process for their preparation and their use |
| EP1475350B1 (de) * | 2003-05-07 | 2005-07-13 | Degussa AG | Umhülltes Natriumpercarbonatgranulat mit verbesserter Lagerstabilität |
| EP1628912A2 (de) * | 2003-05-23 | 2006-03-01 | Degussa AG | Verwendung von pulverf rmigen mischungen, enthaltend wassers toffperoxid und hydrophobiertes siliciumdioxid zur kontrollierten freisetzung von wasserstoffperoxid oder sauerstoff |
| US6841810B1 (en) * | 2003-08-08 | 2005-01-11 | Semiconductor Components Industries, L.L.C. | Cell structure for bipolar integrated circuits and method |
| DE102004054495A1 (de) | 2004-11-11 | 2006-05-24 | Degussa Ag | Natriumpercarbonatpartikel mit einer Thiosulfat enthaltenden Hüllschicht |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7107040A (enExample) * | 1971-05-22 | 1972-11-24 | ||
| US3866066A (en) * | 1973-07-16 | 1975-02-11 | Bell Telephone Labor Inc | Power supply distribution for integrated circuits |
| US3999214A (en) * | 1974-06-26 | 1976-12-21 | Ibm Corporation | Wireable planar integrated circuit chip structure |
| GB1592856A (en) * | 1976-11-27 | 1981-07-08 | Ferranti Ltd | Semiconductor devices |
| JPS60953B2 (ja) * | 1977-12-30 | 1985-01-11 | 富士通株式会社 | 半導体集積回路装置 |
| JPS5850768A (ja) * | 1981-09-21 | 1983-03-25 | Matsushita Electronics Corp | 半導体集積回路装置 |
-
1983
- 1983-09-29 JP JP58179265A patent/JPS6074455A/ja active Granted
-
1984
- 1984-09-24 US US06/653,523 patent/US4748488A/en not_active Expired - Fee Related
- 1984-09-28 DE DE8484306612T patent/DE3475366D1/de not_active Expired
- 1984-09-28 KR KR8405988A patent/KR890004879B1/ko not_active Expired
- 1984-09-28 EP EP84306612A patent/EP0140584B1/en not_active Expired
- 1984-09-28 IE IE2484/84A patent/IE55775B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074455A (ja) | 1985-04-26 |
| EP0140584A1 (en) | 1985-05-08 |
| IE55775B1 (en) | 1991-01-16 |
| DE3475366D1 (en) | 1988-12-29 |
| EP0140584B1 (en) | 1988-11-23 |
| IE842484L (en) | 1985-03-29 |
| US4748488A (en) | 1988-05-31 |
| JPH0531309B2 (enExample) | 1993-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890004879B1 (en) | Master-slcie type semiconductor integrated circuit device | |
| DE3483134D1 (de) | Dynamische halbleiterspeicheranordnung mit geteilten speicherzellenbloecken. | |
| EP0083031A3 (en) | Semiconductor memory device having a programming circuit | |
| DE3381528D1 (de) | Halbleiterspeicheranordnung mit mehreren ladungsspeichertypzellen. | |
| ES8700801A1 (es) | Un aparato para derivar electricamente,de forma condiciona- da,un segmento generador de potencia de una disposicion fo- tovoltaica | |
| DE3876322D1 (de) | Chipkarte mit solarzellenbatterie. | |
| JPS5771574A (en) | Siemconductor memory circuit | |
| KR900005150B1 (en) | Gate array integrated circuit device | |
| IE822222L (en) | Manufacture of integrated circuits by master slice methods | |
| EP0310359A3 (en) | Logic circuit using schottky barrier fets | |
| AU558763B2 (en) | Preventing short circuits in a solar cell | |
| JPS5314525A (en) | Memory circuit | |
| EP0146928A3 (en) | Power semiconductor device with mesa type structure | |
| JPS57121250A (en) | Semiconductor integrated circuit | |
| DE3687037D1 (de) | Halbleiterspeicheranordnung mit einer schaltung um diskriminierspannungsveraenderungen einer speicherzelle zu kompensieren. | |
| JPS56129367A (en) | Semiconductor integrated circuit | |
| EP0189700A3 (en) | Static ram having a flash clear function | |
| ES8503780A1 (es) | Sistema para mejorar al maximo el funcionamiento de una pluralidad en dispositivos de conversion de energia | |
| JPS6467940A (en) | Semiconductor integrated circuit | |
| JPS6489537A (en) | Lsi | |
| GB1451960A (en) | Power transistors | |
| JPS5353281A (en) | Semiconductor integrating circuit | |
| JPS5345134A (en) | Semiconductor memory unit | |
| JPS5377476A (en) | Semiconductor integrated circuit device | |
| JPS5275189A (en) | Charge transfer device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| FPAY | Annual fee payment |
Payment date: 19921103 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19931201 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19931201 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |