KR890003264B1 - 3층 레지스트 및 레지스트 패턴의 형성방법 - Google Patents

3층 레지스트 및 레지스트 패턴의 형성방법 Download PDF

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Publication number
KR890003264B1
KR890003264B1 KR1019850004071A KR850004071A KR890003264B1 KR 890003264 B1 KR890003264 B1 KR 890003264B1 KR 1019850004071 A KR1019850004071 A KR 1019850004071A KR 850004071 A KR850004071 A KR 850004071A KR 890003264 B1 KR890003264 B1 KR 890003264B1
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South Korea
Prior art keywords
layer
resist
sio
organopolysiloxane
pattern
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Expired
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KR1019850004071A
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English (en)
Korean (ko)
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KR860000580A (ko
Inventor
히데오 나마즈
아끼라 요시가와
Original Assignee
니홍 덴싱 뎅와 가부시기가이샤
신도오 와다누루
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Publication of KR860000580A publication Critical patent/KR860000580A/ko
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Publication of KR890003264B1 publication Critical patent/KR890003264B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019850004071A 1984-06-11 1985-06-10 3층 레지스트 및 레지스트 패턴의 형성방법 Expired KR890003264B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59119385A JPS60262150A (ja) 1984-06-11 1984-06-11 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
JP119385 1984-06-11
JP84-119385 1984-06-11

Publications (2)

Publication Number Publication Date
KR860000580A KR860000580A (ko) 1986-01-29
KR890003264B1 true KR890003264B1 (ko) 1989-08-31

Family

ID=14760190

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850004071A Expired KR890003264B1 (ko) 1984-06-11 1985-06-10 3층 레지스트 및 레지스트 패턴의 형성방법

Country Status (5)

Country Link
US (2) US4615782A (https=)
EP (1) EP0167854B1 (https=)
JP (1) JPS60262150A (https=)
KR (1) KR890003264B1 (https=)
DE (1) DE3569840D1 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62502071A (ja) * 1985-03-07 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− イオンビ−ムと電子ビ−ムリソグラフイのためのポリシロキサンレジスト
US4761210A (en) * 1985-09-30 1988-08-02 Siemens Aktiengesellschaft Method for generating structures in micro-mechanics
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4715941A (en) * 1986-04-14 1987-12-29 International Business Machines Corporation Surface modification of organic materials to improve adhesion
US4908094A (en) * 1986-04-14 1990-03-13 International Business Machines Corporation Method for laminating organic materials via surface modification
US4816112A (en) * 1986-10-27 1989-03-28 International Business Machines Corporation Planarization process through silylation
US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
DE3704518A1 (de) 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
KR930000293B1 (ko) * 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 미세패턴형성방법
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法
JP2573996B2 (ja) * 1988-05-11 1997-01-22 日本電信電話株式会社 パターン形成材料
EP0345534A1 (en) * 1988-05-25 1989-12-13 Toray Silicone Company, Limited Polyorganosiloxane with chloromethyl groups
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JP2542075B2 (ja) * 1989-02-23 1996-10-09 三菱電機株式会社 シリコ―ンラダ―系樹脂にパタ―ンを転写する方法およびそれに用いるエッチング液
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
JPH0386725A (ja) * 1989-08-31 1991-04-11 Fujitsu Ltd 絶縁物の製造方法及び半導体装置の製造方法
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
JP2926864B2 (ja) * 1990-04-12 1999-07-28 ソニー株式会社 銅系金属膜のエッチング方法
JP2586692B2 (ja) * 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
US5100503A (en) * 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer
US5286607A (en) * 1991-12-09 1994-02-15 Chartered Semiconductor Manufacturing Pte Ltd. Bi-layer resist process for semiconductor processing
KR0170253B1 (ko) * 1992-11-18 1999-03-20 김광호 실리레이션을 이용한 사진식각방법
US5326727A (en) * 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
US5324689A (en) * 1993-07-28 1994-06-28 Taiwan Semiconductor Manufacturing Company Critical dimension control with a planarized underlayer
JPH095550A (ja) * 1995-06-21 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 光導波路の作製方法
US5750441A (en) 1996-05-20 1998-05-12 Micron Technology, Inc. Mask having a tapered profile used during the formation of a semiconductor device
JP2000199968A (ja) * 1999-01-06 2000-07-18 Sony Corp 多層レジスト構造およびこれを用いた３次元微細構造の作製方法
US6605412B2 (en) 2000-02-18 2003-08-12 Murata Manufacturing Co., Ltd. Resist pattern and method for forming wiring pattern
JP2001279494A (ja) * 2000-03-31 2001-10-10 Tdk Corp 導電体の形成方法、並びに半導体素子及び磁気ヘッドの製造方法
US6743885B2 (en) 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US6872506B2 (en) 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US7364835B2 (en) * 2003-10-15 2008-04-29 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP2005173353A (ja) * 2003-12-12 2005-06-30 Elpida Memory Inc レジストパターン形成方法
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7615337B2 (en) * 2004-08-27 2009-11-10 Intel Corporation Photoactive resist capping layer
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US8133659B2 (en) * 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
WO2012133597A1 (ja) * 2011-03-30 2012-10-04 Jsr株式会社 多層レジストプロセスパターン形成方法及び多層レジストプロセス用無機膜形成組成物
CN102634026B (zh) * 2012-04-01 2014-01-29 北京康美特科技有限公司 一种含三官能团链节的氢基硅树脂及其制备方法
CN104151557B (zh) * 2014-08-08 2016-09-14 广东省工业技术研究院(广州有色金属研究院) 一种以mq硅树脂补强的mtq型苯基含氢硅树脂的制备方法
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US4024041A (en) * 1974-12-18 1977-05-17 Hitachi, Ltd. Method of forming deposition films for use in multi-layer metallization
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
GB1604414A (en) * 1977-07-27 1981-12-09 Raychem Ltd Silicone resin
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
DE3068255D1 (en) * 1979-12-26 1984-07-19 Ibm Process for depositing a pattern of material on a substrate and use of this process for forming a patterned mask structure on a semiconductor substrate
JPS59109565A (ja) * 1982-12-16 1984-06-25 Fujitsu Ltd コ−テイング樹脂溶液およびその製造方法
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US4510173A (en) * 1983-04-25 1985-04-09 Kabushiki Kaisha Toshiba Method for forming flattened film
JPS60254034A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法

Also Published As

Publication number Publication date
KR860000580A (ko) 1986-01-29
DE3569840D1 (en) 1989-06-01
US4615782A (en) 1986-10-07
JPS60262150A (ja) 1985-12-25
US4738916A (en) 1988-04-19
EP0167854B1 (en) 1989-04-26
EP0167854A1 (en) 1986-01-15
JPH0443264B2 (https=) 1992-07-16

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