DE3569840D1 - Intermediate layer material of three-layer resist system and method of forming resist pattern - Google Patents

Intermediate layer material of three-layer resist system and method of forming resist pattern

Info

Publication number
DE3569840D1
DE3569840D1 DE8585107147T DE3569840T DE3569840D1 DE 3569840 D1 DE3569840 D1 DE 3569840D1 DE 8585107147 T DE8585107147 T DE 8585107147T DE 3569840 T DE3569840 T DE 3569840T DE 3569840 D1 DE3569840 D1 DE 3569840D1
Authority
DE
Germany
Prior art keywords
intermediate layer
resist pattern
layer material
resist
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585107147T
Other languages
English (en)
Inventor
Hideo Namatsu
Akira Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3569840D1 publication Critical patent/DE3569840D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G03C1/06—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein with non-macromolecular additives
    • G03C1/08—Sensitivity-increasing substances
    • G03C1/10—Organic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8585107147T 1984-06-11 1985-06-11 Intermediate layer material of three-layer resist system and method of forming resist pattern Expired DE3569840D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59119385A JPS60262150A (ja) 1984-06-11 1984-06-11 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法

Publications (1)

Publication Number Publication Date
DE3569840D1 true DE3569840D1 (en) 1989-06-01

Family

ID=14760190

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107147T Expired DE3569840D1 (en) 1984-06-11 1985-06-11 Intermediate layer material of three-layer resist system and method of forming resist pattern

Country Status (5)

Country Link
US (2) US4615782A (de)
EP (1) EP0167854B1 (de)
JP (1) JPS60262150A (de)
KR (1) KR890003264B1 (de)
DE (1) DE3569840D1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography
US4761210A (en) * 1985-09-30 1988-08-02 Siemens Aktiengesellschaft Method for generating structures in micro-mechanics
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4715941A (en) * 1986-04-14 1987-12-29 International Business Machines Corporation Surface modification of organic materials to improve adhesion
US4908094A (en) * 1986-04-14 1990-03-13 International Business Machines Corporation Method for laminating organic materials via surface modification
US4816112A (en) * 1986-10-27 1989-03-28 International Business Machines Corporation Planarization process through silylation
US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
DE3704518A1 (de) 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
US4936951A (en) * 1987-10-26 1990-06-26 Matsushita Electric Industrial Co., Ltd. Method of reducing proximity effect in electron beam resists
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法
JP2573996B2 (ja) * 1988-05-11 1997-01-22 日本電信電話株式会社 パターン形成材料
EP0345534A1 (de) * 1988-05-25 1989-12-13 Toray Silicone Company, Limited Chloromethylgruppen enthaltende Polyorganosiloxane
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JP2542075B2 (ja) * 1989-02-23 1996-10-09 三菱電機株式会社 シリコ―ンラダ―系樹脂にパタ―ンを転写する方法およびそれに用いるエッチング液
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
JPH0386725A (ja) * 1989-08-31 1991-04-11 Fujitsu Ltd 絶縁物の製造方法及び半導体装置の製造方法
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
JP2926864B2 (ja) * 1990-04-12 1999-07-28 ソニー株式会社 銅系金属膜のエッチング方法
JP2586692B2 (ja) * 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
US5100503A (en) * 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer
US5286607A (en) * 1991-12-09 1994-02-15 Chartered Semiconductor Manufacturing Pte Ltd. Bi-layer resist process for semiconductor processing
KR0170253B1 (ko) * 1992-11-18 1999-03-20 김광호 실리레이션을 이용한 사진식각방법
US5326727A (en) * 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
US5324689A (en) * 1993-07-28 1994-06-28 Taiwan Semiconductor Manufacturing Company Critical dimension control with a planarized underlayer
JPH095550A (ja) * 1995-06-21 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 光導波路の作製方法
US5750441A (en) 1996-05-20 1998-05-12 Micron Technology, Inc. Mask having a tapered profile used during the formation of a semiconductor device
JP2000199968A (ja) * 1999-01-06 2000-07-18 Sony Corp 多層レジスト構造およびこれを用いた３次元微細構造の作製方法
US6605412B2 (en) 2000-02-18 2003-08-12 Murata Manufacturing Co., Ltd. Resist pattern and method for forming wiring pattern
JP2001279494A (ja) * 2000-03-31 2001-10-10 Tdk Corp 導電体の形成方法、並びに半導体素子及び磁気ヘッドの製造方法
US6743885B2 (en) 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US6872506B2 (en) 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
KR101189397B1 (ko) * 2003-10-15 2012-10-11 브레우어 사이언스 인코포레이션 비아-퍼스트 듀얼 다마신 적용예에서 사용되는 현상제에 용해성인 물질 및 상기 물질 사용 방법
JP2005173353A (ja) * 2003-12-12 2005-06-30 Elpida Memory Inc レジストパターン形成方法
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7615337B2 (en) * 2004-08-27 2009-11-10 Intel Corporation Photoactive resist capping layer
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
CN101971102B (zh) * 2008-01-29 2012-12-12 布鲁尔科技公司 用来通过多次暗视场曝光对硬掩模进行图案化的在线法
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
WO2012133597A1 (ja) * 2011-03-30 2012-10-04 Jsr株式会社 多層レジストプロセスパターン形成方法及び多層レジストプロセス用無機膜形成組成物
CN102634026B (zh) * 2012-04-01 2014-01-29 北京康美特科技有限公司 一种含三官能团链节的氢基硅树脂及其制备方法
CN104151557B (zh) * 2014-08-08 2016-09-14 广东省工业技术研究院(广州有色金属研究院) 一种以mq硅树脂补强的mtq型苯基含氢硅树脂的制备方法
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US4024041A (en) * 1974-12-18 1977-05-17 Hitachi, Ltd. Method of forming deposition films for use in multi-layer metallization
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
GB1604414A (en) * 1977-07-27 1981-12-09 Raychem Ltd Silicone resin
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
EP0031463B1 (de) * 1979-12-26 1984-06-13 International Business Machines Corporation Verfahren zum musterförmigen Anbringen eines Materials auf einem Substrat und Verwendung dieses Verfahrens zur Herstellung einer gemusterten Maskenstruktur auf einem Halbleitersubstrat
JPS59109565A (ja) * 1982-12-16 1984-06-25 Fujitsu Ltd コ−テイング樹脂溶液およびその製造方法
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US4510173A (en) * 1983-04-25 1985-04-09 Kabushiki Kaisha Toshiba Method for forming flattened film
JPS60254034A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法

Also Published As

Publication number Publication date
JPH0443264B2 (de) 1992-07-16
KR890003264B1 (ko) 1989-08-31
EP0167854A1 (de) 1986-01-15
EP0167854B1 (de) 1989-04-26
US4615782A (en) 1986-10-07
JPS60262150A (ja) 1985-12-25
US4738916A (en) 1988-04-19
KR860000580A (ko) 1986-01-29

Similar Documents

Publication Publication Date Title
DE3569840D1 (en) Intermediate layer material of three-layer resist system and method of forming resist pattern
EP0069854A3 (en) Method of forming a pattern of openings in a layer of a positive resist system and method of forming via holes
EP0173881A3 (en) Photolithographic method and combination including barrier layer
EP0169576A3 (en) Method and system of circuit pattern understanding and layout
DE3573987D1 (en) A multilayered prosthesis material and a method of producing same
GB2154177B (en) Retroreflective material and method of making same
DE3572085D1 (en) Method of selectively forming an insulation layer
KR890015077A (ko) 패턴형성용 레지스트물질 및 레지스트 패턴의 형성방법
PH21565A (en) Multilayer coating and method
ZA853957B (en) Multilayer coating and method
GB2141131B (en) Method of forming resist pattern
EP0305143A3 (en) Method of selectively forming a conductor layer
DE3266831D1 (en) Agent and method for modifying surface layer of cement structures
EP0171289A3 (en) Ceramic articles having a nonporous core and porous outer layer
EP0315954A3 (en) Pattern-forming material and pattern formation method
JPS56165399A (en) Freely supporting layer and method of producing same
EP0171068A3 (en) Method of forming ultrafine patterns
DE3565999D1 (en) Method of forming a carbide layer
KR860004663A (ko) 판의 단면 형상 제어식 압연방법 및 압연기
GB2142346B (en) Method of formation of layer of multiconstituent material
JPS55153934A (en) Method of forming mat layer
EP0158357A3 (en) Method of forming resist micropattern
GB2155822B (en) Apparatus and method for making laminate structures
GB2158783B (en) Vehicle and method of construction thereof
EP0234873A3 (en) Method of forming wear-resistant layer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee