KR890002992A - Manufacturing method of MOS field effect transistor - Google Patents

Abstract

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Description

Manufacturing method of MOS field effect transistor

Since this is an open matter, no full text was included.

1 (A)-(G) is a manufacturing process diagram according to the present invention

Claims (3)

1. A method of manufacturing a mode field effect transistor, comprising: a first step of forming a field oxide film 2 and a gate oxide film 3 on a semiconductor substrate 1 of a first conductivity type, and a polysilicon 4 on the oxide film; ) And a second step of sequentially forming the first oxide film 5, a third step of forming a gate 4 ′ by forming a photoresist pattern on the first oxide film 5, and the ion implantation. A fifth process of applying a second oxide film 7 to the entire surface of the finished semiconductor substrate and etching-back by anisotropic dry etching, and second ions of the second conductivity type to form a high concentration of the second drain and the source. A sixth step of implanting, a sixth step of injecting a second ion of a second conductivity type to form a high concentration second drain and source, and a third oxide film 9 on the entire surface of the semiconductor substrate after the ion implantation. It consists of the seventh process to grow Mohs method for producing a field effect transistor as set. The method of manufacturing a MOS field effect transistor according to claim 1, wherein the etching method of the third step is a plasma etching method, and the etching method of the fifth step is an ion etching method having reactivity. The method of manufacturing a MOS field effect transistor according to claim 1 or 2, wherein the second oxide film for etching back in the fifth step is replaced with a nitride film. ※ Note: The disclosure is based on the initial application.