KR920015437A - MOS transistor - Google Patents
MOS transistor Download PDFInfo
- Publication number
- KR920015437A KR920015437A KR1019910000557A KR910000557A KR920015437A KR 920015437 A KR920015437 A KR 920015437A KR 1019910000557 A KR1019910000557 A KR 1019910000557A KR 910000557 A KR910000557 A KR 910000557A KR 920015437 A KR920015437 A KR 920015437A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- polysilicon
- gate
- forming
- sidewalls
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 9
- 229920005591 polysilicon Polymers 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도의 (가)~(바)는 본 발명에 따른 GOLD 구조의 MOS 트랜지스터 제조공정도.2A to 2B are MOS transistor manufacturing process diagrams of the GOLD structure according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910000557A KR940002777B1 (en) | 1991-01-15 | 1991-01-15 | Manufacturing method for mos-tr |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910000557A KR940002777B1 (en) | 1991-01-15 | 1991-01-15 | Manufacturing method for mos-tr |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920015437A true KR920015437A (en) | 1992-08-26 |
KR940002777B1 KR940002777B1 (en) | 1994-04-02 |
Family
ID=19309824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910000557A KR940002777B1 (en) | 1991-01-15 | 1991-01-15 | Manufacturing method for mos-tr |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940002777B1 (en) |
-
1991
- 1991-01-15 KR KR1019910000557A patent/KR940002777B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940002777B1 (en) | 1994-04-02 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050322 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |