KR880701404A - Cmos 전압 변환기 - Google Patents
Cmos 전압 변환기Info
- Publication number
- KR880701404A KR880701404A KR1019870701066A KR870701066A KR880701404A KR 880701404 A KR880701404 A KR 880701404A KR 1019870701066 A KR1019870701066 A KR 1019870701066A KR 870701066 A KR870701066 A KR 870701066A KR 880701404 A KR880701404 A KR 880701404A
- Authority
- KR
- South Korea
- Prior art keywords
- voltage converter
- cmos voltage
- cmos
- converter
- voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/841,977 US4675557A (en) | 1986-03-20 | 1986-03-20 | CMOS voltage translator |
PCT/US1987/000039 WO1987005760A1 (en) | 1986-03-20 | 1987-01-12 | Cmos voltage translator |
Publications (1)
Publication Number | Publication Date |
---|---|
KR880701404A true KR880701404A (ko) | 1988-07-27 |
Family
ID=25286233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870701066A KR880701404A (ko) | 1986-03-20 | 1987-11-19 | Cmos 전압 변환기 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4675557A (ko) |
EP (1) | EP0262156A4 (ko) |
JP (1) | JPS63502858A (ko) |
KR (1) | KR880701404A (ko) |
WO (1) | WO1987005760A1 (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2509596B2 (ja) * | 1987-01-14 | 1996-06-19 | 株式会社東芝 | 中間電位生成回路 |
EP0304035B1 (en) * | 1987-08-17 | 1993-02-10 | Nec Corporation | Bi-mos circuit capable of high speed operation with low power consumption |
JPS6477314A (en) * | 1987-09-18 | 1989-03-23 | Nec Corp | Semiconductor circuit |
US4888498A (en) * | 1988-03-24 | 1989-12-19 | Texas Instruments Incorporated | Integrated-circuit power-up pulse generator circuit |
US4833350A (en) * | 1988-04-29 | 1989-05-23 | Tektronix, Inc. | Bipolar-CMOS digital interface circuit |
US4994688A (en) * | 1988-05-25 | 1991-02-19 | Hitachi Ltd. | Semiconductor device having a reference voltage generating circuit |
US5254880A (en) * | 1988-05-25 | 1993-10-19 | Hitachi, Ltd. | Large scale integrated circuit having low internal operating voltage |
US5079441A (en) * | 1988-12-19 | 1992-01-07 | Texas Instruments Incorporated | Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage |
CA1317344C (en) * | 1988-12-21 | 1993-05-04 | National Semiconductor Corporation | Bicmos positive supply voltage reference |
US5149988A (en) * | 1988-12-21 | 1992-09-22 | National Semiconductor Corporation | BICMOS positive supply voltage reference |
JPH03214659A (ja) * | 1990-01-18 | 1991-09-19 | Mitsubishi Electric Corp | 電界効果形半導体装置の電源電圧設定部 |
NL9001017A (nl) * | 1990-04-27 | 1991-11-18 | Philips Nv | Bufferschakeling. |
US5081371A (en) * | 1990-11-07 | 1992-01-14 | U.S. Philips Corp. | Integrated charge pump circuit with back bias voltage reduction |
US5160855A (en) * | 1991-06-28 | 1992-11-03 | Digital Equipment Corporation | Floating-well CMOS output driver |
US5266886A (en) * | 1992-10-23 | 1993-11-30 | Intel Corporation | CMOS power supply voltage limiter |
JP3365804B2 (ja) * | 1993-01-12 | 2003-01-14 | 株式会社日立製作所 | 通信回線駆動回路、及びインタフェース用lsi、並びに通信端末装置 |
JP3342730B2 (ja) * | 1993-03-17 | 2002-11-11 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US5432467A (en) * | 1993-05-07 | 1995-07-11 | Altera Corporation | Programmable logic device with low power voltage level translator |
KR100392556B1 (ko) * | 1994-01-31 | 2003-11-12 | 주식회사 하이닉스반도체 | 시모스회로용입력버퍼 |
GB9508886D0 (en) * | 1995-05-02 | 1995-06-21 | Plessey Semiconductors Ltd | Integrated circuit output buffer |
US6147511A (en) | 1996-05-28 | 2000-11-14 | Altera Corporation | Overvoltage-tolerant interface for integrated circuits |
GB2349999B (en) * | 1996-05-28 | 2001-01-31 | Altera Corp | Techniques of fabricating integrated circuits having interfaces compatible with different operating voltage conditions |
JP3242042B2 (ja) * | 1996-10-30 | 2001-12-25 | 住友金属工業株式会社 | レベルシフト回路 |
US6362652B1 (en) | 1999-12-20 | 2002-03-26 | Fujitsu Microelectronics, Inc. | High voltage buffer for submicron CMOS |
DE10014385B4 (de) | 2000-03-23 | 2005-12-15 | Infineon Technologies Ag | CMOS-Spannungsteiler |
US6580291B1 (en) | 2000-12-18 | 2003-06-17 | Cypress Semiconductor Corp. | High voltage output buffer using low voltage transistors |
KR100529386B1 (ko) * | 2004-04-27 | 2005-11-17 | 주식회사 하이닉스반도체 | 래치-업 방지용 클램프를 구비한 반도체 메모리 소자 |
DE102005057129A1 (de) * | 2005-11-30 | 2007-05-31 | Infineon Technologies Ag | Schaltungsanordnung, Verfahren zur Steuerung einer Schwellenspannung eines Transistors, Diferenzverstärker mit der Schaltungsanordnung sowie Verwendung der Schaltungsanordnung |
US9813056B2 (en) | 2015-09-21 | 2017-11-07 | Analog Devices Global | Active device divider circuit with adjustable IQ |
JP6798218B2 (ja) * | 2016-09-28 | 2020-12-09 | 富士電機株式会社 | 出力段バッファ回路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849885B2 (ja) * | 1976-03-16 | 1983-11-07 | 日本電気株式会社 | 定電圧回路 |
US4300061A (en) * | 1979-03-15 | 1981-11-10 | National Semiconductor Corporation | CMOS Voltage regulator circuit |
GB2081940A (en) * | 1980-08-05 | 1982-02-24 | Standard Telephones Cables Ltd | MOS transistor circuit |
US4380710A (en) * | 1981-02-05 | 1983-04-19 | Harris Corporation | TTL to CMOS Interface circuit |
DE3138558A1 (de) * | 1981-09-28 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zur erzeugung eines von schwankungen einer versorgungsgleichspannung freien gleichspannungspegels |
JPS59218042A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体集積回路 |
-
1986
- 1986-03-20 US US06/841,977 patent/US4675557A/en not_active Expired - Fee Related
-
1987
- 1987-01-12 EP EP19870900937 patent/EP0262156A4/en not_active Withdrawn
- 1987-01-12 JP JP62500743A patent/JPS63502858A/ja active Pending
- 1987-01-12 WO PCT/US1987/000039 patent/WO1987005760A1/en not_active Application Discontinuation
- 1987-11-19 KR KR1019870701066A patent/KR880701404A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS63502858A (ja) | 1988-10-20 |
US4675557A (en) | 1987-06-23 |
WO1987005760A1 (en) | 1987-09-24 |
EP0262156A1 (en) | 1988-04-06 |
EP0262156A4 (en) | 1988-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |