KR880701404A - Cmos 전압 변환기 - Google Patents

Cmos 전압 변환기

Info

Publication number
KR880701404A
KR880701404A KR1019870701066A KR870701066A KR880701404A KR 880701404 A KR880701404 A KR 880701404A KR 1019870701066 A KR1019870701066 A KR 1019870701066A KR 870701066 A KR870701066 A KR 870701066A KR 880701404 A KR880701404 A KR 880701404A
Authority
KR
South Korea
Prior art keywords
voltage converter
cmos voltage
cmos
converter
voltage
Prior art date
Application number
KR1019870701066A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880701404A publication Critical patent/KR880701404A/ko

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465Internal voltage generators for integrated circuits, e.g. step down generators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018521Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Electrical Variables (AREA)
KR1019870701066A 1986-03-20 1987-11-19 Cmos 전압 변환기 KR880701404A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/841,977 US4675557A (en) 1986-03-20 1986-03-20 CMOS voltage translator
PCT/US1987/000039 WO1987005760A1 (en) 1986-03-20 1987-01-12 Cmos voltage translator

Publications (1)

Publication Number Publication Date
KR880701404A true KR880701404A (ko) 1988-07-27

Family

ID=25286233

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870701066A KR880701404A (ko) 1986-03-20 1987-11-19 Cmos 전압 변환기

Country Status (5)

Country Link
US (1) US4675557A (ko)
EP (1) EP0262156A4 (ko)
JP (1) JPS63502858A (ko)
KR (1) KR880701404A (ko)
WO (1) WO1987005760A1 (ko)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2509596B2 (ja) * 1987-01-14 1996-06-19 株式会社東芝 中間電位生成回路
EP0304035B1 (en) * 1987-08-17 1993-02-10 Nec Corporation Bi-mos circuit capable of high speed operation with low power consumption
JPS6477314A (en) * 1987-09-18 1989-03-23 Nec Corp Semiconductor circuit
US4888498A (en) * 1988-03-24 1989-12-19 Texas Instruments Incorporated Integrated-circuit power-up pulse generator circuit
US4833350A (en) * 1988-04-29 1989-05-23 Tektronix, Inc. Bipolar-CMOS digital interface circuit
US4994688A (en) * 1988-05-25 1991-02-19 Hitachi Ltd. Semiconductor device having a reference voltage generating circuit
US5254880A (en) * 1988-05-25 1993-10-19 Hitachi, Ltd. Large scale integrated circuit having low internal operating voltage
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
CA1317344C (en) * 1988-12-21 1993-05-04 National Semiconductor Corporation Bicmos positive supply voltage reference
US5149988A (en) * 1988-12-21 1992-09-22 National Semiconductor Corporation BICMOS positive supply voltage reference
JPH03214659A (ja) * 1990-01-18 1991-09-19 Mitsubishi Electric Corp 電界効果形半導体装置の電源電圧設定部
NL9001017A (nl) * 1990-04-27 1991-11-18 Philips Nv Bufferschakeling.
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
US5160855A (en) * 1991-06-28 1992-11-03 Digital Equipment Corporation Floating-well CMOS output driver
US5266886A (en) * 1992-10-23 1993-11-30 Intel Corporation CMOS power supply voltage limiter
JP3365804B2 (ja) * 1993-01-12 2003-01-14 株式会社日立製作所 通信回線駆動回路、及びインタフェース用lsi、並びに通信端末装置
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
US5432467A (en) * 1993-05-07 1995-07-11 Altera Corporation Programmable logic device with low power voltage level translator
KR100392556B1 (ko) * 1994-01-31 2003-11-12 주식회사 하이닉스반도체 시모스회로용입력버퍼
GB9508886D0 (en) * 1995-05-02 1995-06-21 Plessey Semiconductors Ltd Integrated circuit output buffer
US6147511A (en) 1996-05-28 2000-11-14 Altera Corporation Overvoltage-tolerant interface for integrated circuits
GB2349999B (en) * 1996-05-28 2001-01-31 Altera Corp Techniques of fabricating integrated circuits having interfaces compatible with different operating voltage conditions
JP3242042B2 (ja) * 1996-10-30 2001-12-25 住友金属工業株式会社 レベルシフト回路
US6362652B1 (en) 1999-12-20 2002-03-26 Fujitsu Microelectronics, Inc. High voltage buffer for submicron CMOS
DE10014385B4 (de) 2000-03-23 2005-12-15 Infineon Technologies Ag CMOS-Spannungsteiler
US6580291B1 (en) 2000-12-18 2003-06-17 Cypress Semiconductor Corp. High voltage output buffer using low voltage transistors
KR100529386B1 (ko) * 2004-04-27 2005-11-17 주식회사 하이닉스반도체 래치-업 방지용 클램프를 구비한 반도체 메모리 소자
DE102005057129A1 (de) * 2005-11-30 2007-05-31 Infineon Technologies Ag Schaltungsanordnung, Verfahren zur Steuerung einer Schwellenspannung eines Transistors, Diferenzverstärker mit der Schaltungsanordnung sowie Verwendung der Schaltungsanordnung
US9813056B2 (en) 2015-09-21 2017-11-07 Analog Devices Global Active device divider circuit with adjustable IQ
JP6798218B2 (ja) * 2016-09-28 2020-12-09 富士電機株式会社 出力段バッファ回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
GB2081940A (en) * 1980-08-05 1982-02-24 Standard Telephones Cables Ltd MOS transistor circuit
US4380710A (en) * 1981-02-05 1983-04-19 Harris Corporation TTL to CMOS Interface circuit
DE3138558A1 (de) * 1981-09-28 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur erzeugung eines von schwankungen einer versorgungsgleichspannung freien gleichspannungspegels
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS63502858A (ja) 1988-10-20
US4675557A (en) 1987-06-23
WO1987005760A1 (en) 1987-09-24
EP0262156A1 (en) 1988-04-06
EP0262156A4 (en) 1988-07-14

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Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid