KR880011896A - 드라이에칭방법 - Google Patents

드라이에칭방법 Download PDF

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Publication number
KR880011896A
KR880011896A KR1019880003422A KR880003422A KR880011896A KR 880011896 A KR880011896 A KR 880011896A KR 1019880003422 A KR1019880003422 A KR 1019880003422A KR 880003422 A KR880003422 A KR 880003422A KR 880011896 A KR880011896 A KR 880011896A
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KR
South Korea
Prior art keywords
gas
etching
carbon
transition metal
dry etching
Prior art date
Application number
KR1019880003422A
Other languages
English (en)
Other versions
KR910006605B1 (ko
Inventor
마고토 후지노
마사노 이토
이사히로 하세가와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880011896A publication Critical patent/KR880011896A/ko
Application granted granted Critical
Publication of KR910006605B1 publication Critical patent/KR910006605B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

드라이에칭방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명에 따른 방법이 적용된 드라이에칭장치의 블록도를 나타낸다.

Claims (4)

  1. 산화탄소가스가 함유된 에칭가스를 이용하여 전이금속이 함유된 에칭대상물을 에칭시키는 것을 특징으로 하는 드라이에칭방법.
  2. 제1항에 있어서, 산화탄소가스는 일산화탄소가스나 이산화탄소가스 또는 이 가스들의 혼합가스임을 특징으로 하는 방법.
  3. 제1항 또는 제2항에 있어서, 산화탄소가스는 금속중의 전이금속의 원자수의 비율 X에 대하여 그분자수의 비율 R이 X/3 내지 200X인 영역내에서 에칭가스내에 함유되어 있음을 특징으로 하는 방법.
  4. 제1항에 있어서, 에칭대상물은 알루비늄-실리콘 합금이며, 전이금속은 구리이고, 에칭가스는 염소가스와 3염화붕소가스 및 헬륨가스의 혼합가스이며, 산화탄소가스는 일산화탄소임을 특징으로 하는방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003422A 1987-03-31 1988-03-29 드라이에칭방법 KR910006605B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62079165A JPS63244848A (ja) 1987-03-31 1987-03-31 ドライエツチング方法
JP62-79165 1987-03-31

Publications (2)

Publication Number Publication Date
KR880011896A true KR880011896A (ko) 1988-10-31
KR910006605B1 KR910006605B1 (ko) 1991-08-29

Family

ID=13682350

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003422A KR910006605B1 (ko) 1987-03-31 1988-03-29 드라이에칭방법

Country Status (4)

Country Link
US (1) US5091050A (ko)
EP (1) EP0285129A3 (ko)
JP (1) JPS63244848A (ko)
KR (1) KR910006605B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000047112A (ko) * 1998-12-31 2000-07-25 강병호 디지털 비디오 프린터의 열전사 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2926864B2 (ja) * 1990-04-12 1999-07-28 ソニー株式会社 銅系金属膜のエッチング方法
JP2757546B2 (ja) * 1990-08-27 1998-05-25 日本電気株式会社 Ｆｅを含む物質のエッチング方法およびエッチング装置
KR950011563B1 (ko) * 1990-11-27 1995-10-06 가부시끼가이샤 도시바 반도체장치의 제조방법
JPH04225525A (ja) * 1990-12-27 1992-08-14 Sony Corp ドライエッチング方法
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0590224A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
US5221425A (en) * 1991-08-21 1993-06-22 International Business Machines Corporation Method for reducing foreign matter on a wafer etched in a reactive ion etching process
JPH07193048A (ja) * 1993-12-27 1995-07-28 Nec Corp ドライエッチング方法
TW409152B (en) * 1996-06-13 2000-10-21 Samsung Electronic Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film
US6225202B1 (en) * 2000-06-21 2001-05-01 Chartered Semiconductor Manufacturing, Ltd. Selective etching of unreacted nickel after salicidation
WO2003019590A1 (en) * 2001-08-21 2003-03-06 Seagate Technology Llc Enhanced ion beam etch selectivity of magnetic thin films using carbon-based gases
US7229563B2 (en) * 2002-01-29 2007-06-12 Tokyo Electron Limited Plasma etching of Ni-containing materials
US7955515B2 (en) 2005-07-11 2011-06-07 Sandisk 3D Llc Method of plasma etching transition metal oxides
US20070010100A1 (en) * 2005-07-11 2007-01-11 Matrix Semiconductor, Inc. Method of plasma etching transition metals and their compounds

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320769A (en) * 1976-08-10 1978-02-25 Toshiba Corp Plasma etching method of metal electrodes
JPS53146939A (en) * 1977-05-27 1978-12-21 Hitachi Ltd Etching method for aluminum
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials
NL8004007A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
JPS58153334A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp クロム系膜のドライエツチング法
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPS60169140A (ja) * 1984-02-13 1985-09-02 Hitachi Ltd ドライエツチング方法
JPS60228687A (ja) * 1984-04-25 1985-11-13 Hitachi Ltd ニツケルまたは含ニツケル合金のドライエツチング方法
US4659426A (en) * 1985-05-03 1987-04-21 Texas Instruments Incorporated Plasma etching of refractory metals and their silicides
JPS6237382A (ja) * 1985-08-08 1987-02-18 Nissin Electric Co Ltd 高融点金属のエツチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000047112A (ko) * 1998-12-31 2000-07-25 강병호 디지털 비디오 프린터의 열전사 장치

Also Published As

Publication number Publication date
US5091050A (en) 1992-02-25
JPS63244848A (ja) 1988-10-12
EP0285129A3 (en) 1990-10-17
EP0285129A2 (en) 1988-10-05
KR910006605B1 (ko) 1991-08-29

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