KR880002901A - 촉매 조성물, 신규한 비스포스핀 및 중합체 제조방법 - Google Patents

촉매 조성물, 신규한 비스포스핀 및 중합체 제조방법 Download PDF

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KR880002901A
KR880002901A KR870004772A KR870004772A KR880002901A KR 880002901 A KR880002901 A KR 880002901A KR 870004772 A KR870004772 A KR 870004772A KR 870004772 A KR870004772 A KR 870004772A KR 880002901 A KR880002901 A KR 880002901A
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bisphosphine
catalyst composition
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phenyl
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아드리아누스 마리아 반 브뢰크호벤 요하네스
류우인 와이프 리차아드
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오노 알버어스
셀 인터나쵸 나아레 레사아치 마아츠 샤피 비이부이
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Abstract

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Description

촉매 조성물, 신규한 비스포스핀 및 중합체 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (27)

  1. a) 팔라듐 화합물, b)pka가 2보다 작은 산의 음이온(단, 이산은 할로겐화수소산이 아니다), c)일반식 R1R2P-R-PR3R4(이 식에서, R1-R4는 극성기에 의해 치환되거나 치환되지 않을 수 있는 유사하거나 다른 히드로카르빌기이되, 단 R1-R4기들 중 적어도 하나는 인의 오르토 위치에 적어도 하나의 극성 치환체를 포함하는 극성 치환된 아릴기이고 ; R은 가교에 적어도 두 개의 탄소원자를 포함하는 2가 유기 가교결합기이다)의 비스포스핀, 및 d) 임의로, 퀴논을 기제로 하는 것을 특징으로 하는 신규한 촉매 조성물.
  2. 제1항에 있어서, 성분 a)로서 초산팔라듐과 같은 카르복실산의 팔라듐염, 성분 b)로서 트리플루오로초산과 같은 카르복실산의 또는 파라-톨루엔-설폰산과 같은 설폰산의 음이온을 기제로 하고 성분 b)가 팔라듐 그람 원자당 1.0-100당량의 양으로 촉매 조성물내에 존재하는 것을 특징으로 하는 촉매 조성물.
  3. 제1항 또는 제2항에 있어서, 성분 b)가 구리염과 같은 비-금속 전이 금속염의 형태로 또는 산의 형태로 촉매 조성물내에 함입되는 것을 특징으로 하는 촉매 조성물.
  4. 제1항 내지 제3항 중 어느 하나에 있어서, 성분 c)로서 2가 가교결합기 R이 가교에 세개의 탄소원자를 포함하는 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  5. 제1항 내지 제4항 중 어느 하나에 있어서, 성분 c)로서 R1,R2,R3및 R4기들이 극성기로 치환되거나 치환되지 않을 수 있는 아릴기이되, 단 이 기들 중 적어도 하나는 인의 오르토 위치에 적어도 하나의 극성 치환체를 포함하는, 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  6. 제5항에 있어서, 성분 c)로서 아릴기가 페닐기인 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  7. 제1항 내지 제6항중 어느 하나에 있어서, 성분 c)로서 오르토 인의 위치의 극성 치환체가 R5-O-, R5-S-, R5-CO-O, R5R6N-또는 R5-CO-NR6-기(여기서 R5및 R6는 유사한 또는 다른 히드로 카르빌기이다)인 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  8. 제7항에 있어서, 성분 c)로서 인의 오르토 위치의 극성치환체가 알콕시기인 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  9. 제8항에 있어서, 성분 c)로서 인의 오르토 위치의 극성치환체가 메특시기인 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  10. 제1항 내지 제9항중 어느 하나에 있어서 성분 c)로서 R1,R2,R3및 R4기들 각각이 인의 오르토 위치에 극성 치환체를 포함하는 아릴기인 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  11. 제1항 내지 제10항중 어느 하나에 있어서, 성분 c)로서 R1,R2,R3및 R4기들이 서로 유사한 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  12. 제11항에 있어서, 성분 d)로서 1,3-비스〔디(2-메톡시-페닐)포스피노〕프로판, 1,3-비스〔디(2,4-디메톡시-페닐)포스피노〕프로판, 1,3-비스〔디(2,6-디메톡시-페닐)포스피노〕프로판 및 1,3-비스〔디(2,4,6-트리메톡시-페닐)포스피노〕프로판으로 형성된 군으로부터 선택된 비스포스핀을 포함하는 것을 특징으로 하는 촉매 조성물.
  13. 제1항 내지 제12항중 어느 하나에 있어서 ; 성분 c)가 팔라듐 화합물 몰당 0.75-1.5 몰의 양으로 존재하는 것을 특징으로 하는 촉매 조성물
  14. 제1항 내지 제13항중 어느 하나에 있어서, 성분 d)가 팔라듐 그람 원자당 10-5000몰의 양으로 존재하는 것을 특징으로 하는 촉매 조성물.
  15. 제14항에 있어서, 성분 d)로서 1,4-벤조퀴논을 포함하는 것을 특징으로 하는 촉매 조성물.
  16. R1-R4는 극성기에 의해 치환되거나 치환되지 않을 수 있는 유사한 또는 다른 히드로카르빌기이되, 단 R1-R4기들중 적어도 하나는 인의 오르토 위치에 적어도 하나의 극성 치환체를 포함하는 극성 치환된 아릴기이고 ; R은 가교에 세 개의 탄소원자를 포함하는 2가 유기 가교 결합기인 일반식 R1R2P-R-PR3R4의 신규한 비스포스핀.
  17. R1이 인의 오르토 우치에 극성 치환체를 갖는 아릴기인 일반식(R1)2P-R-P(R1)2를 갖는 비스포스핀.
  18. 제16항 또는 제17항에 있어서, R이 -CH2-CH2-CH2-기인 것을 특징으로 하는 비스포스핀.
  19. 제16항, 제17항 또는 제18항에 있어서, 인의 오르토 위치의 아릴기 내의 극성 치환체로서, R1이 하나 또는 두개의 알콕시기를 포함하는 것을 특징으로 하는 비스포스핀.
  20. 신규한 비스포스핀으로 1,3-비스〔디(2-에톡시-페닐)포스피노〕프로판.
  21. 신규한 비스포스핀으로 1,3-비스〔디(2-메톡시-페닐)포스피노〕프로판.
  22. 신규한 비스포스핀으로 1,3-비스〔디(2,6-디메톡시-페닐)포스피노〕프로판.
  23. 신규한 비스포스핀으로 1,3-비스〔디(2,4-디메톡시-페닐)포스피노〕프로판.
  24. 신규한 비스포스핀으로 1,3-비스〔디(2,4,6-트리메특시-페닐)포스피노〕프로판.
  25. 일산화탄소와 하나 또는 그 이상의 올레핀형 불포화 유기 화합물의 혼합물을 제1항 내지 제15항의 어느 하나에 청구된 바와 같은 촉매 조성물을 사용함으로 중합시키는 것을 특징으로 하는 중합체들의 제조방법.
  26. 제25항에 있어서, 사용된 올레핀형 불포화 유기 화합물이 탄화수소, 특히 에텐이거나, 또는 특정 프로펜내 에텐 및 다른 올레핀형 불포화 탄화수소의 혼합물인 것을 특징으로 하는 방법.
  27. 제25항 또는 제26항에 있어서, 30-150℃의 온도, 20-200바아의 압력 및 중합되어야 할 혼합물내의 일산화탄소에 대한 올레핀형 불포화 유기 화합물의 몰비 5 : 1-1 : 2에서 수행하고, 중합되어야 할 올레핀형 불포화 유기 화합물 몰당, 촉매 조성물의 양의 팔라듐 10-6-10-4그람 원자를 포함하도록 하는 양을 사용하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870004772A 1986-08-26 1987-05-13 촉매 조성물 및 이를 이용한 중합체 제조 방법 KR960010252B1 (ko)

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FI90557C (fi) 1994-02-25
EP0257663B1 (en) 1992-01-15
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IE60429B1 (en) 1994-07-13
DK233887A (da) 1988-02-27
DE3776033D1 (de) 1992-02-27
EP0257663A2 (en) 1988-03-02
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HU908099D0 (en) 1991-06-28
CN1012438B (zh) 1991-04-24
NO169235B (no) 1992-02-17
EP0257663A3 (en) 1989-03-08
DK233887D0 (da) 1987-05-07
NO169235C (no) 1992-05-27
PL265671A1 (en) 1988-08-18
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AU597360B2 (en) 1990-05-31
CN87104306A (zh) 1988-05-04
ES2028048T3 (es) 1992-07-01
BR8702449A (pt) 1988-04-05
FI872118A0 (fi) 1987-05-13
JPH0822914B2 (ja) 1996-03-06
HU204279B (en) 1991-12-30
ATE71639T1 (de) 1992-02-15
JPH08176169A (ja) 1996-07-09
IE871184L (en) 1988-02-26
NZ220290A (en) 1989-08-29
JP2863997B2 (ja) 1999-03-03
JPS6357638A (ja) 1988-03-12
CA1333810C (en) 1995-01-03
IL82449A (en) 1992-03-29
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AU7276387A (en) 1988-03-03
IL82449A0 (en) 1987-11-30
IN171627B (ko) 1992-11-28
KR960010252B1 (ko) 1996-07-26

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