KR880001550A - 표면 처리 방법 및 이에 사용되는 장치 - Google Patents

표면 처리 방법 및 이에 사용되는 장치 Download PDF

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KR880001550A
KR880001550A KR1019870007178A KR870007178A KR880001550A KR 880001550 A KR880001550 A KR 880001550A KR 1019870007178 A KR1019870007178 A KR 1019870007178A KR 870007178 A KR870007178 A KR 870007178A KR 880001550 A KR880001550 A KR 880001550A
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treated
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powder
layer
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KR930009353B1 (ko
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도루 아라이
준지 엔도
히로마사 다께다
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고마쭈 노보루
가부시끼 가이샤 도요다 주오 겐뀨소
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/05—Fluidized bed

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

내용 없음

Description

표면 처리 방법 및 이에 사용되는 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 처리 장치를 도식적으로 도시한 것이다.
제2도는 본 발명의 장치에 사용되는 활성화가스 분출 파이프에 대한 평면도이다.
제3도는 제2도의 라인(Ⅲ)-(Ⅲ)을 따라 절취한 단면도이다.
제4도는 활성제 가스 분출 파이프의 다른 실시양태를 설명하는 평면도이다.
제5도는 제4동의 라인(Ⅴ)-(Ⅴ)를 따라 절취한 단면도이다.

Claims (15)

  1. 내화성 물질의 분말, 및 카바이드, 니트라이드, 카보니크라이드 또는 고체 용액을 형성하는 금속의 분말 또는 이들의 합금 분말로 이루어진 처리제를 유동충식노(fluidized bed furmace)에 넣고, 유동화 가스를 유동층식 노내로 도입시켜 처리제를 유동화시켜 유동층을 형성시키고,처리될 물질을 유동층 내에 넣은 다음, 예정된 양의 할라이드를 유동층내로 도입 시키고, 가열하에서, 처리될 물질의 표면상에 금속의 카바이드,니트라이드,카보니트라이드 또는 고체 용액의 층을 형성시킴을 특징으로 하여, 처리되는 물질상에 표면층을 형성시키는 방법.
  2. 제1항에 있어서, 할라이드가 할로겐화 암모늄, 금속 할라이드 및 알카리 금속 또는 알카리토금속 할라이드로 이루어진 그룹중에서 선택된 적어도 하나의 성분으로 이루어지고, 할라이드의 양이 처리제를 기준으로 하여 0.05내지 20중량 %인 방법.
  3. 제1항에 있어서, 금속 분말 또는 합금 분말의 양이 처리제를 기준으로 하여 1내지 50중량%인 방법.
  4. 제1항에 있어서, 유동화 가스가 질소가스,질소-함유 가스, 또는 질소-함유 가스와 아르곤의 혼합물이며, 이렇게 하여 처리되는 물질의 표면상에 니트라이드 또는 카보니트라이드 층을 형성시키는 방법.
  5. 제1항에 있어서, 유동화 가스가 불활성 가스 이며, 이렇게 하여 처리되는 물질의 표면상에 카바이드 또는 고체용액의 층을 형성시키는 방법.
  6. 제1항에 있어서, 가열을 400˚C내지 1200˚C의 온도에서 수행하는 방법.
  7. 제1항에 있어서, 처리제가 내화성 물질의 분말, 및 카바이드 또는 카보니트라이드를 형성하는 금속 또는 합금 분말로 이루어지고, 처리되는 물질이 탄소를 함유하는 금속 물질, 시멘트 카바이드, 및 주로 흑연으로 구성된 탄소질 물질중 하나이며, 이렇게 하여 처리되는 물질의 표면상에 카바이드 또는 카보니트라이드층을 형성시키는 방법.
  8. 제7항에 있어서, 처리되는 물질이 탄소를 함유하는 철, 니켈 및 코발트중 하나인 방법.
  9. 제1항에 있어서, 처리제가 내화성 물질의 분말, 및 니트라이드를 형성하는 금속 또는 합금 분말로 이루어지고, 처리되는 물질이 금속 물질 및 비-금속 물질중 하나이며, 이렇게 하여, 처리되는 물질의 표면상에 니트라이드 층을 형성시키는 방법.
  10. 제9항에 있어서, 처리되는 물질이 철, 니켈, 코발트 및 소결된 세라믹중 하나인 방법.
  11. 제1항에 있어서 처리제가 내화성 물질의 분말, 및 고체 용액을 형성하는 금속 또는 합금 문말로 이루어지고, 처리되는 물질이 탄소를 함유하지 않은 금속 물질이며, 이렇게 하여, 처리되는 물질의 표면상에 고체 용액의 층을 형성시키는 방법.
  12. 제11항에 있어서, 처리되는 물질이 탄소를 함유하지 않은 철 및 스테인레스 스틸중 하나인 방법.
  13. 제1항에 있어서, 처리제가 내화성 물질의 분말 및 카바이드, 니트라이드 또는 카보니트라이드를 형성하는 금속 또는 합금 분말로 이루어지고, 처리되는 물질이 니트라이드화 처리를 수행한 금속 물질이며, 이렇게 하여, 처리되는 물질의 표면상에 카바이드,니트라이드 또는 카보니트라이드 층을 형성시키는 방법.
  14. 내화성 물질의 분말 및 카바이드, 니트라이드, 카보니트라이드 또는 고체용액을 형성하는 금속의 분말 또는 이들의 합금 분말로 이루어진 처리제의 유동층내에서 표면층을 형성하기 위한 노 본체, 유도층을 가열하기 위한 가열 노, 노 본체의 외부에 연결되어 장치되어 있는 할라이드 공급 파이프 및 노 본체내에 배치되어 있고,할라이드 공급 파이프에 연결되어 있으며 유동층 내로 개구되어 있는 다수의 구멍을 갖는 할라이드 가스 분출 파이프로 이루어짐을 특징으로 하는, 처리될 물질상에 표면층을 형성하는 장치.
  15. 제14항에 있어서, 유동화 가스의 흐름에 대해 수직인 평면상에서의 할라이드 가스 분출 파이프 및 할라이드 공급 파이프의 전체 단면적인 비율이 유동층의 수직 단면적의 1/3이하인 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007178A 1986-07-07 1987-07-06 표면 처리방법 및 이에 사용되는 장치 KR930009353B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP159440 1981-10-08
JP159440/1986 1986-07-07
JP61159440A JPH0819514B2 (ja) 1986-07-07 1986-07-07 表面処理方法およびその装置

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KR880001550A true KR880001550A (ko) 1988-04-25
KR930009353B1 KR930009353B1 (ko) 1993-09-28

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US (1) US4844949A (ko)
EP (1) EP0252480B1 (ko)
JP (1) JPH0819514B2 (ko)
KR (1) KR930009353B1 (ko)
CN (1) CN1013124B (ko)
AU (1) AU594792B2 (ko)
CA (1) CA1300440C (ko)
DE (1) DE3773770D1 (ko)
ES (1) ES2025101B3 (ko)
IN (1) IN169705B (ko)

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CN87104781A (zh) 1988-01-27
CA1300440C (en) 1992-05-12
AU7524287A (en) 1988-01-14
KR930009353B1 (ko) 1993-09-28
JPH0819514B2 (ja) 1996-02-28
EP0252480A3 (en) 1988-11-30
ES2025101B3 (es) 1992-03-16
AU594792B2 (en) 1990-03-15
EP0252480B1 (en) 1991-10-16
IN169705B (ko) 1991-12-14
DE3773770D1 (de) 1991-11-21
CN1013124B (zh) 1991-07-10
US4844949A (en) 1989-07-04
JPS6314856A (ja) 1988-01-22
EP0252480A2 (en) 1988-01-13

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