KR870004335A - 포토레지스트 제거용 용매 - Google Patents
포토레지스트 제거용 용매 Download PDFInfo
- Publication number
- KR870004335A KR870004335A KR1019860008809A KR860008809A KR870004335A KR 870004335 A KR870004335 A KR 870004335A KR 1019860008809 A KR1019860008809 A KR 1019860008809A KR 860008809 A KR860008809 A KR 860008809A KR 870004335 A KR870004335 A KR 870004335A
- Authority
- KR
- South Korea
- Prior art keywords
- weight
- propylene glycol
- alkyl
- general formula
- amine
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- a) 적어도 하나의 일반식(Ⅰ)의 수용성아민 10 내지 100중량%와 b) 적어도 하나의 일반식(Ⅱ)의 수용성 프로필렌글리콜 유도체 0 내지 90중량%로 이루어진 포토레지스트제거제상기식에서, R1, R2, R3및 R4는 각기 독립적으로 수소 또는 알킬을 나타내고, 일반식(Ⅱ)에서는 R3및 R4가 각기 H, 알킬 또는알킬을 나타내며, n 및 m은 각각 0내지 2를 나타내고, 0는 1내지 3을 나타내며 P는 1내지 3을 나타낸다.
- 제1항에 있어서, 이소프로판올아민 또는 N-(2-아미노에틸)-에탄올아민과 디- 또는 트리-프로필렌글리콜 메틸 에테르로 이루어진 포토레지스트제거제.
- 제1항 또는 2항에 있어서, 아민 10내지 90중량%와 프로필렌글리콜 유도체 10내지 90중량 %을 함유하는 포토레지스트제거제
- 제3항에 있어서, 아민 20내지 70중량 %와 프로필렌글리콜 유도체 30내지 80중량 %를 함유하는 포토레지스트제거제.
- 제1항에 있어서, 개개성분의 비점이 적어도 160℃인 포토레지스트제거제※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP3537441.1 | 1985-10-22 | ||
DE19853537441 DE3537441A1 (de) | 1985-10-22 | 1985-10-22 | Loesemittel zum entfernen von photoresists |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870004335A true KR870004335A (ko) | 1987-05-08 |
KR940007792B1 KR940007792B1 (ko) | 1994-08-25 |
Family
ID=6284093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860008809A KR940007792B1 (ko) | 1985-10-22 | 1986-10-21 | 감광성 내식막 제거용 용매 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4765844A (ko) |
EP (1) | EP0219789B1 (ko) |
JP (1) | JPH0782238B2 (ko) |
KR (1) | KR940007792B1 (ko) |
DE (2) | DE3537441A1 (ko) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3667109D1 (en) * | 1985-10-28 | 1989-12-28 | Hoechst Celanese Corp | Liquid for the treatment of a photoresist composition, and process therefor |
JPH0721638B2 (ja) * | 1986-07-18 | 1995-03-08 | 東京応化工業株式会社 | 基板の処理方法 |
US4808513A (en) * | 1987-04-06 | 1989-02-28 | Morton Thiokol, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
US4824763A (en) * | 1987-07-30 | 1989-04-25 | Ekc Technology, Inc. | Triamine positive photoresist stripping composition and prebaking process |
AU5076890A (en) * | 1989-03-13 | 1990-09-20 | Safety-Kleen Corp. | Cleaning compositions and methods |
US6000411A (en) * | 1990-11-05 | 1999-12-14 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
US6121217A (en) | 1990-11-05 | 2000-09-19 | Ekc Technology, Inc. | Alkanolamine semiconductor process residue removal composition and process |
US7205265B2 (en) | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US20040018949A1 (en) * | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5556482A (en) * | 1991-01-25 | 1996-09-17 | Ashland, Inc. | Method of stripping photoresist with composition containing inhibitor |
IT1245398B (it) * | 1991-03-22 | 1994-09-20 | Silvani Antincendi Spa | Composizione per il lavaggio e la pulizia degli stampi di vulcanizzazione |
US5207838A (en) * | 1991-08-29 | 1993-05-04 | Martin Marietta Energy Systems, Inc. | Nonhazardous solvent composition and method for cleaning metal surfaces |
US5190595A (en) * | 1991-09-03 | 1993-03-02 | International Business Machines Corporation | Ozone safe stripping solution for thermal grease |
JP3095296B2 (ja) * | 1991-12-19 | 2000-10-03 | 株式会社日立製作所 | レジスト剥離方法、これを用いた薄膜回路素子の製造方法、および、レジスト剥離液 |
US5480585A (en) * | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
JP3048207B2 (ja) * | 1992-07-09 | 2000-06-05 | イー.ケー.シー.テクノロジー.インコーポレイテッド | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法 |
DE4303923A1 (de) * | 1993-02-10 | 1994-08-11 | Microparts Gmbh | Verfahren zum Beseitigen von Kunststoffen aus Mikrostrukturen |
US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
EP0843841B1 (en) * | 1996-06-10 | 2002-09-04 | Koninklijke Philips Electronics N.V. | Stripping composition |
JPH10186680A (ja) * | 1996-12-26 | 1998-07-14 | Clariant Internatl Ltd | リンス液 |
US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6224785B1 (en) | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
US5962197A (en) * | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
JP4224651B2 (ja) | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
JP2000284506A (ja) | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6455479B1 (en) | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
JP4085262B2 (ja) * | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
CN1875325B (zh) | 2003-10-29 | 2011-01-26 | 马林克罗特贝克公司 | 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物 |
KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
JP5236217B2 (ja) * | 2006-06-22 | 2013-07-17 | 東進セミケム株式会社 | レジスト除去用組成物 |
US9410111B2 (en) | 2008-02-21 | 2016-08-09 | S.C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US8993502B2 (en) | 2008-02-21 | 2015-03-31 | S. C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion to a vertical hard surface and providing residual benefits |
US9481854B2 (en) | 2008-02-21 | 2016-11-01 | S. C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US8143206B2 (en) | 2008-02-21 | 2012-03-27 | S.C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion and providing residual benefits |
MX2010009161A (es) | 2008-02-21 | 2010-09-14 | Johnson & Son Inc S C | Composicion de limpieza que tiene autoadhesion superior y proporciona beneficios residuales. |
US8980813B2 (en) | 2008-02-21 | 2015-03-17 | S. C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion on a vertical hard surface and providing residual benefits |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673099A (en) * | 1970-10-19 | 1972-06-27 | Bell Telephone Labor Inc | Process and composition for stripping cured resins from substrates |
US3796602A (en) * | 1972-02-07 | 1974-03-12 | Du Pont | Process for stripping polymer masks from circuit boards |
US4077896A (en) * | 1975-01-15 | 1978-03-07 | Minnesota Mining And Manufacturing Company | Wax-stripping cleaning composition |
DE3023201A1 (de) * | 1980-06-21 | 1982-01-07 | Hoechst Ag, 6000 Frankfurt | Positiv arbeitendes strahlungsempfindliches gemisch |
JPS57165834A (en) * | 1981-04-06 | 1982-10-13 | Hitachi Chem Co Ltd | Peeling solution for cured film of photopolymerizing composition |
JPS57202540A (en) * | 1981-06-06 | 1982-12-11 | Mitsuwaka Junyaku Kenkyusho:Kk | Peeling agent for photoresist |
US4428871A (en) * | 1981-09-23 | 1984-01-31 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
JPS60131535A (ja) * | 1983-12-20 | 1985-07-13 | エッチエムシー・パテンツ・ホールディング・カンパニー・インコーポレーテッド | ポジのホトレジスト用のストリツピング組成物 |
JPS60147736A (ja) * | 1984-01-11 | 1985-08-03 | Hitachi Chem Co Ltd | フエノ−ル系樹脂含有感光性組成物の剥離液 |
DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
US4592787A (en) * | 1984-11-05 | 1986-06-03 | The Dow Chemical Company | Composition useful for stripping photoresist polymers and method |
US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
-
1985
- 1985-10-22 DE DE19853537441 patent/DE3537441A1/de not_active Withdrawn
-
1986
- 1986-10-13 DE DE8686114147T patent/DE3683982D1/de not_active Expired - Lifetime
- 1986-10-13 EP EP86114147A patent/EP0219789B1/de not_active Expired - Lifetime
- 1986-10-20 US US06/920,665 patent/US4765844A/en not_active Expired - Lifetime
- 1986-10-20 JP JP61247671A patent/JPH0782238B2/ja not_active Expired - Fee Related
- 1986-10-21 KR KR1019860008809A patent/KR940007792B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0782238B2 (ja) | 1995-09-06 |
EP0219789A2 (de) | 1987-04-29 |
KR940007792B1 (ko) | 1994-08-25 |
JPS6295531A (ja) | 1987-05-02 |
DE3683982D1 (de) | 1992-04-02 |
EP0219789A3 (en) | 1988-03-16 |
DE3537441A1 (de) | 1987-04-23 |
US4765844A (en) | 1988-08-23 |
EP0219789B1 (de) | 1992-02-26 |
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