KR870002482A - 광경화 감광성 내식막층의 박리방법 - Google Patents

광경화 감광성 내식막층의 박리방법

Info

Publication number
KR870002482A
KR870002482A KR1019860006980A KR860006980A KR870002482A KR 870002482 A KR870002482 A KR 870002482A KR 1019860006980 A KR1019860006980 A KR 1019860006980A KR 860006980 A KR860006980 A KR 860006980A KR 870002482 A KR870002482 A KR 870002482A
Authority
KR
South Korea
Prior art keywords
solution
ammonium base
quaternary ammonium
photoresist layer
base
Prior art date
Application number
KR1019860006980A
Other languages
English (en)
Other versions
KR940007781B1 (ko
Inventor
스테판 하르트무트
가이슬러 울리히
Original Assignee
베트라우퍼, 게흐르만
훽스트 아크티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베트라우퍼, 게흐르만, 훽스트 아크티엔게젤샤프트 filed Critical 베트라우퍼, 게흐르만
Publication of KR870002482A publication Critical patent/KR870002482A/ko
Application granted granted Critical
Publication of KR940007781B1 publication Critical patent/KR940007781B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photographic Processing Devices Using Wet Methods (AREA)
  • Materials For Photolithography (AREA)

Abstract

내용 없음

Description

광경화 감광성 내식막층의 박리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부 도면은 실물크기의 2 내지 6배 크기의 플레이크 사진을 나타낸다.

Claims (9)

  1. 암모늄 염기 수용액을 사용하여, 유기 4급 암모늄 염기 용액으로 처리하여 광 경화 감광성 내식막층을 박리하는 방법.
  2. 제1항에 있어서, 강 무기염기를 용액에 첨가하는 방법.
  3. 제1항에 있어서, 노출된 광중합 가능한 층을 박리하는 방법.
  4. 제3항에 있어서, 광중합 가능한 층이 알카리 수용액중에 가용성 또는 적어도 팽융성이 있는 수-불용성 중합체 결합제를 포함하는 방법.
  5. 제1항에 있어서, 4급 암모늄 염기는 알킬 그룹이 탄소원자 1내지 8개를 포함하는 테트라알킬 암모늄 하이드록사이드인 방법.
  6. 제5항에 있어서, 알킬 그룹하나 이상이 하이드록시 그룹으로 치환되는 방법.
  7. 제1항에 있어서, 4급 암모늄 염기가 질소원자 상의 치환기로서 알킬 및 알케닐 그룹을 함유하는 방법.
  8. 제1항에 있어서, 용액이 4급 암모늄 염기를 0.05 내지 2몰/ι 함유하는 방법.
  9. 제2항에 있어서, 용액이 알카리 금속 하이드록사이드를 0.05 내지 2몰/ι 함유하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860006980A 1985-08-24 1986-08-23 광경화 감광성 내식막층의 박리방법 KR940007781B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3530282.8 1985-08-24
DE19853530282 DE3530282A1 (de) 1985-08-24 1985-08-24 Verfahren zum entschichten von lichtgehaerteten photoresistschichten

Publications (2)

Publication Number Publication Date
KR870002482A true KR870002482A (ko) 1987-03-31
KR940007781B1 KR940007781B1 (ko) 1994-08-25

Family

ID=6279267

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006980A KR940007781B1 (ko) 1985-08-24 1986-08-23 광경화 감광성 내식막층의 박리방법

Country Status (5)

Country Link
US (1) US4776892A (ko)
EP (1) EP0212556A3 (ko)
JP (1) JPS6250832A (ko)
KR (1) KR940007781B1 (ko)
DE (1) DE3530282A1 (ko)

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US5753421A (en) * 1994-03-31 1998-05-19 Tokyo Ohka Kogya Co., Ltd. Stock developer solutions for photoresists and developer solutions prepared by dilution thereof
US6440647B1 (en) * 1998-02-26 2002-08-27 Alpha Metals, Inc. Resist stripping process
US6105588A (en) 1998-05-27 2000-08-22 Micron Technology, Inc. Method of resist stripping during semiconductor device fabrication
US6221269B1 (en) 1999-01-19 2001-04-24 International Business Machines Corporation Method of etching molybdenum metal from substrates
US6217667B1 (en) * 1999-09-24 2001-04-17 Semitool, Inc. Method for cleaning copper surfaces
US20040094268A1 (en) * 2002-11-20 2004-05-20 Brask Justin K. Oxidation inhibitor for wet etching processes
US7442675B2 (en) * 2003-06-18 2008-10-28 Tokyo Ohka Kogyo Co., Ltd. Cleaning composition and method of cleaning semiconductor substrate
JP4620680B2 (ja) * 2003-10-29 2011-01-26 マリンクロッド・ベイカー・インコーポレイテッド ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US8026201B2 (en) 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
CN102866601B (zh) * 2012-10-10 2014-07-30 绵阳艾萨斯电子材料有限公司 等离子显示屏剥离液及其制备方法与应用

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CA716032A (en) * 1965-08-17 Reckitt, Colman, Chiswick (Overseas) Limited Cleaning compositions
CH514669A (de) * 1968-07-16 1971-10-31 Gunter Schroeder & Co Chem Fab Alkalische Reinigungsmittel und seine Verwendung als Reiniger für Milch- und Rahmerhitzer, Verdampfer und sonstige Einrichtungen für die Milchindustrie
US3673099A (en) * 1970-10-19 1972-06-27 Bell Telephone Labor Inc Process and composition for stripping cured resins from substrates
DE2257270A1 (de) * 1972-11-22 1974-05-30 Kalle Ag Verfahren und vorrichtung zum entfernen einer belichteten und entwickelten photoresistschicht
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4078102A (en) * 1976-10-29 1978-03-07 International Business Machines Corporation Process for stripping resist layers from substrates
US4089704A (en) * 1976-12-27 1978-05-16 Bell Telephone Laboratories, Incorporated Removal of RTV silicon rubber encapsulants
US4202703A (en) * 1977-11-07 1980-05-13 Rca Corporation Method of stripping photoresist
JPS5635424A (en) * 1980-08-13 1981-04-08 Toshiba Corp Manufacture of semiconductor device
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JPS58139430A (ja) * 1982-02-15 1983-08-18 Toray Ind Inc レジストの剥離法
EP0097282A3 (en) * 1982-06-17 1984-07-25 Shipley Company Inc. Developer compositions for photoresists
JPS5990850A (ja) * 1982-11-16 1984-05-25 Toshiba Corp レジストパタ−ンの剥離液
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
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JPS60147736A (ja) * 1984-01-11 1985-08-03 Hitachi Chem Co Ltd フエノ−ル系樹脂含有感光性組成物の剥離液
DE3580827D1 (de) * 1984-10-09 1991-01-17 Hoechst Japan K K Verfahren zum entwickeln und zum entschichten von photoresistschichten mit quaternaeren ammomiumverbindungen.

Also Published As

Publication number Publication date
EP0212556A2 (de) 1987-03-04
US4776892A (en) 1988-10-11
KR940007781B1 (ko) 1994-08-25
DE3530282A1 (de) 1987-03-05
JPS6250832A (ja) 1987-03-05
EP0212556A3 (de) 1988-02-10

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