KR870000393A - 후막저항 조성물 - Google Patents

후막저항 조성물 Download PDF

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Publication number
KR870000393A
KR870000393A KR1019860004955A KR860004955A KR870000393A KR 870000393 A KR870000393 A KR 870000393A KR 1019860004955 A KR1019860004955 A KR 1019860004955A KR 860004955 A KR860004955 A KR 860004955A KR 870000393 A KR870000393 A KR 870000393A
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South Korea
Prior art keywords
thick film
film resistance
resistance composition
weight
silicide
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KR1019860004955A
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English (en)
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KR900008866B1 (ko
Inventor
히로도시 와다나베
오사무 마끼노
도오루 이시다
Original Assignee
마쯔시다덴기산교 가부시기가이샤
다니이 아끼오
미쯔시다덴기산교 가부시기 가이샤
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Priority claimed from JP60136411A external-priority patent/JPS61294801A/ja
Priority claimed from JP60222231A external-priority patent/JPS6281702A/ja
Priority claimed from JP61051705A external-priority patent/JPS62209801A/ja
Application filed by 마쯔시다덴기산교 가부시기가이샤, 다니이 아끼오, 미쯔시다덴기산교 가부시기 가이샤 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR870000393A publication Critical patent/KR870000393A/ko
Application granted granted Critical
Publication of KR900008866B1 publication Critical patent/KR900008866B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0656Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/0658Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06593Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the temporary binder
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49099Coating resistive material on a base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Abstract

내용 없음

Description

후막저항 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 AR과 유리중의 Nb2O5+Ta2O5함량간의 관계를 도시하는 특성도이다.
AR은 저항의 폭이 1㎜인 경우에 있어서, 양전극간의 거리가 0.5㎜일때의 면적저항 R0ㆍ5(Ω/□)과 야전극간의 거리가 10㎜일때의 면적저항 R10과의 비를 표시한다.
즉, AR=R0ㆍ5/R10이다.

Claims (20)

  1. 열적해중합유기중합체를 포함하는 매질에 분산된 규화물분말 및 알카리토류붕규산염유리분말로 구성되고, 상기 규화물분말은 규화몰리브덴 0내지 80몰%와, 산화탄탈 및 산화마그네슘의 혼합물 100내지 20몰%로 구성되고, 산화마그네슘에 대한 산화탄탈의 몰비는 9.5:0.5내지 5:5의 범위내에 있고, 상기 알칼리토류붕규산염유리분말은 산화니오브 8내지 10중량%를 포함하여서 된 것을 특징으로 하는 후막저항조성물.
  2. 제1항에 있어서,
    상기 규화물분말은 고상용액으로 이루어지는 것을 특징으로 하는 후막저항조성물.
  3. 제1항에 있어서,
    상기 규화물분말의 평균입경은 1㎛미만인 것을 특징으로 하는 후막저항조성물.
  4. 제1항에 있어서,
    상기 열적해중합 유기중합체는 아크릴계수지인 것을 특징으로 하는 후막저항조성물.
  5. 제1항에 있어서,
    상기 열적해중합 유기중합체는 이소부틸메타크릴산염과 메틸메타 크릴산염의 비가 6:4 내지 8:2의 범위내에 있는 공중합체인 것을 특징으로 하는 후막저항조성물.
  6. 제1항에 있어서,
    상기 알카리토류붕규산염 유리분말은 산화니오브 1내지 7중량%와 산화탄탈 1내지 15중량%을 포함하는 것을 특징으로 하는 후막저항 조성물.
  7. 제1항에 있어서,
    상기 알카리토류붕규산염 유리분말은 BaO, SrO 및 CaO중의 적어도 한가지 30내지 50중량%와, B2O330내지 50중량%와, SiO22내지 10중량%와, Al2O30내지 15중량%와, MgO 0내지 5중량%로 구성되는 것을 특징으로 하는 후막저항조성물.
  8. 제1항에 있어서,
    상기 유리분말의 평균입경은 2내지 6㎛인 것을 특징으로 하는 후막저항조성물.
  9. 열적해중합유기중합체를 포함하는 매질에 분산된 규화물분말 및 알카리토류붕규산염유리분말로 구성되고, 상기 규화물분말은 10내지 90몰%의 규화코발트 및 90내지 10몰%의 규화니켈로 구성되고, 상기 알카리토류붕규산염유리분말은 8내지 10중량%의 산화니오브를 포함하여서 된 것을 특징으로 하는 후막저항조성물.
  10. 제9항에 있어서,
    상기 규화물분말은 고상용액으로 이루어진 것을 특징으로 하는 후막저항조성물.
  11. 제9항에 있어서,
    상기 규화물분말의 입경은 1㎛미만인 것을 특징으로 하는 후막저항 조성물.
  12. 제9항에 있어서,
    상기 열적해중합 유기중합체는 아크릴계수지인 것을 특징으로 하는 후막저항 조성물.
  13. 제9항에 있어서,
    상기 열적해중합 유기중합체는 이소부틸메타크릴산염과 메틸메타 크릴산염의 비가 6:4 내지 8:2의 범위내에 있는 공중합체인 것을 특징으로 하는 후막저항 조성물.
  14. 제9항에 있어서,
    상기 알카리토류붕규산염유리분말은 1내지 7중량%의 산화니오브와 1내지 15중량%의 산화탄탈을 포함하는 것을 특징으로 하는 후막저항 조성물.
  15. 제9항에 있어서,
    상기 알카리토류붕규산염유리분말은 BaO, SrO 및 CaO중의 적어도 한가지 30내지 50중량%와, B2O330내지 50중량%와, SiO22내지 10중량%와, Al2O30내지 15중량%와, MgO 0내지 5중량%로 구성되는 것을 특징으로 하는 후막저항 조성물.
  16. 제9항에 있어서,
    상기 유리분말의 평균입경은 2내지 6㎛인 것을 특징으로 하는 후막저항 조성물.
  17. 제1항 또는 제9항에 있어서,
    상기 분말들을 혼합 및 분산시켜서 후막저항조성물을 제조하고, 세라믹기판상에 저항을 형성시키고, 형성된 저항을 비산화분위기에서 소성시키는 것을 특징으로 하는 후막저항의 제조방법.
  18. 제17항에 있어서,
    상기 후막저항 조성물을 비산화분위기중의 850내지 965℃의 온도에서 소성시키는 것을 특징으로 하는 후막저항의 제조방법.
  19. 저항이 세라믹 기판상에 미리 형성된 구리전극에 접속되도록 제17항의 방법으로 형성시킨 후막저항을 가지는 회로기판.
  20. 제19항에 있어서,
    상기 세라믹기판으로 알루미나기판이 사용되는 것을 특징으로 하는 회로기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004955A 1985-06-21 1986-06-20 후막저항조성물 KR900008866B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP60-136411 1985-06-21
JP60136411A JPS61294801A (ja) 1985-06-21 1985-06-21 グレ−ズ抵抗体ペ−スト
JP60-222231 1985-10-04
JP60222231A JPS6281702A (ja) 1985-10-04 1985-10-04 珪化物抵抗材料
JP61051705A JPS62209801A (ja) 1986-03-10 1986-03-10 グレ−ズ抵抗体ペ−スト
JP61-51705 1986-03-10

Publications (2)

Publication Number Publication Date
KR870000393A true KR870000393A (ko) 1987-02-18
KR900008866B1 KR900008866B1 (ko) 1990-12-11

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KR1019860004955A KR900008866B1 (ko) 1985-06-21 1986-06-20 후막저항조성물

Country Status (2)

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US (1) US4695504A (ko)
KR (1) KR900008866B1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632355B2 (ja) * 1986-01-27 1994-04-27 株式会社日立製作所 セラミツク配線基板とその製造方法
DE3887765T2 (de) * 1987-03-25 1994-09-22 Sumitomo Electric Industries Verfahren zur Herstellung einer dicken supraleitenden Schicht.
JPS63292032A (ja) * 1987-05-26 1988-11-29 Ngk Insulators Ltd 圧力検出器
JPH0731091B2 (ja) * 1987-05-27 1995-04-10 日本碍子株式会社 歪検出器
US4949065A (en) * 1987-09-21 1990-08-14 Matsushita Electric Industrial Co., Ltd. Resistor composition, resistor produced therefrom, and method of producing resistor
US4985176A (en) * 1987-12-04 1991-01-15 Murata Manufacturing Co., Ltd. Resistive paste
US5250958A (en) * 1987-12-10 1993-10-05 Matsushita Electric Industrial Co., Ltd. Thermal head and manufacturing method thereof
US4985377A (en) * 1987-12-14 1991-01-15 Matsushita Electric Industrial Co., Ltd. Glaze resistor
JPH0812801B2 (ja) * 1988-01-11 1996-02-07 株式会社日立製作所 ハイブリットic用基板とそれを用いたハイブリットic及びその装置
JPH01133701U (ko) * 1988-03-07 1989-09-12
JPH03129701A (ja) * 1989-09-19 1991-06-03 Mitsubishi Electric Corp 抵抗体装置
JPH03246901A (ja) * 1990-02-23 1991-11-05 Hitachi Ltd 厚膜抵抗組成物、該組成物を用いたハイブリッドicおよびその製法
US5256603A (en) * 1992-11-19 1993-10-26 Corning Incorporated Glass bonded ceramic composites
JP2674523B2 (ja) * 1993-12-16 1997-11-12 日本電気株式会社 セラミック配線基板とその製造方法
US5637261A (en) * 1994-11-07 1997-06-10 The Curators Of The University Of Missouri Aluminum nitride-compatible thick-film binder glass and thick-film paste composition
DE19736855A1 (de) * 1997-08-23 1999-02-25 Philips Patentverwaltung Schaltungsanordnung mit einem SMD-Bauelement, insbesondere Temperatursensor und Verfahren zur Herstellung eines Temperatursensors
US5980785A (en) * 1997-10-02 1999-11-09 Ormet Corporation Metal-containing compositions and uses thereof, including preparation of resistor and thermistor elements
RU2658644C2 (ru) * 2016-03-16 2018-06-22 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Способ изготовления и состав пасты для толстопленочного резистора

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039997A (en) * 1973-10-25 1977-08-02 Trw Inc. Resistance material and resistor made therefrom
US4119573A (en) * 1976-11-10 1978-10-10 Matsushita Electric Industrial Co., Ltd. Glaze resistor composition and method of making the same
US4512917A (en) * 1983-08-22 1985-04-23 E. I. Du Pont De Nemours And Company Hexaboride resistor composition
US4597897A (en) * 1985-06-24 1986-07-01 E. I. Du Pont De Nemours And Company Hexaboride resistor composition

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US4695504A (en) 1987-09-22
KR900008866B1 (ko) 1990-12-11

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