KR860008598A - 광노출장치 - Google Patents
광노출장치 Download PDFInfo
- Publication number
- KR860008598A KR860008598A KR1019860002815A KR860002815A KR860008598A KR 860008598 A KR860008598 A KR 860008598A KR 1019860002815 A KR1019860002815 A KR 1019860002815A KR 860002815 A KR860002815 A KR 860002815A KR 860008598 A KR860008598 A KR 860008598A
- Authority
- KR
- South Korea
- Prior art keywords
- thin plate
- shape
- exposure apparatus
- chuck platen
- optical exposure
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예의 광노출장치를 표시한 투시도.
제2도는 본 장치에서 사용되는 박판변형 메카니즘(mechanism)의 실시예를 표시한 평면도.
제3도는 제2도에서 선 A-A'를 따라 취한 종단면도.
Claims (7)
- 박판 변형 메카니즘을 갖는 광노출장치로서, 상기의 메카니즘이 다음의 것으로 구성되는 것 : 박판을 그 윗면에 진공흡입시키기 위한 척 플래튼으로서, 상기의 척 플래튼은 그의 아랫면에 다수의 망으로 이루어진 그리드형태로 도안된 구멍을 뚫지않은 슬릿으로 구성되어 척플래튼을 상기한 망근처의 벤딩라인을 따라 소성변형을 시킬 수 있도록하며; 그리고, 상기의 박판을 원하는 형태로 변형시키기 위하여 개개의 망을 수직적으로 변형시키기 위한 다수의 수직이동기로서, 패턴으로 구성된 또 다른 박판과 패턴이 전사되는 상기의 박판사이의 간격을 균일하게 유지시키는 것.
- 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 슬릿의 끝이 U자형이나 V자형으로 끝나는 것.
- 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 수직이동기가 전기적 신호를 상기의 수직이동기에 공급하기 위하여 프린트 회로판과 접촉하는 적극을 갖는 것.
- 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 망이 삼각형인 것.
- 다음의 것들로 구성되는 박막변형 메카니즘 : 윗면을 박판에 진공흡입시키기 위한 척 플래튼으로서, 상기의 척 플래튼을 다수의 망으로 이루어진 그리드형태로 도안된 구멍이 뚫리지 않은 슬릿으로 이루어진 아랫면을 갖고 상기의 망근처에서 벤딩라인을 따라 척 플래튼을 변형시킬 수 있으며, 그리고 상기의 박판을 원하는 형태로 변형시키기 위해 개개의 망을 수직적으로 변형시키기 위한 다수의 수직이동기.
- 청구범위 제5항의 박판변형 메카니즘에 있어서, 그 내부에 상기의 슬릿의 끝이 U자형이나 V자형으로 끝나는 것.
- 청구범위 제5항의 박판변형 메카니즘에 있어서, 그 내부에 상기의 망이 삼각형인 것.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60080171A JPS61239638A (ja) | 1985-04-17 | 1985-04-17 | 薄板平担化チヤツク |
JP60-80171 | 1985-04-17 | ||
JP134084 | 1985-06-21 | ||
JP60-134084 | 1985-06-21 | ||
JP60134084A JPS61292918A (ja) | 1985-06-21 | 1985-06-21 | 薄板平坦化チヤツク |
JP60219047A JPH0642508B2 (ja) | 1985-10-03 | 1985-10-03 | 薄板変形装置およびプロキシミティ露光装置 |
JP60-2101047 | 1985-10-03 | ||
JP219047 | 1985-10-03 | ||
JP80171 | 1986-04-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860008598A true KR860008598A (ko) | 1986-11-17 |
KR900001241B1 KR900001241B1 (ko) | 1990-03-05 |
Family
ID=27303231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860002815A KR900001241B1 (ko) | 1985-04-17 | 1986-04-14 | 광 노출 장치 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4666291A (ko) |
KR (1) | KR900001241B1 (ko) |
Families Citing this family (39)
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JPS63172148A (ja) * | 1987-01-12 | 1988-07-15 | Hitachi Ltd | 基板表面変形装置 |
WO1989006376A1 (en) * | 1987-12-30 | 1989-07-13 | Hampshire Instruments, Inc. | Positioning subassembly for a lithography machine |
JP2690960B2 (ja) * | 1988-09-07 | 1997-12-17 | 株式会社日立製作所 | 拡大投影露光方法及びその装置 |
US5157438A (en) * | 1992-02-04 | 1992-10-20 | Dek Printing Machines Limited | Workpiece support and clamping means |
US5563684A (en) * | 1994-11-30 | 1996-10-08 | Sgs-Thomson Microelectronics, Inc. | Adaptive wafer modulator for placing a selected pattern on a semiconductor wafer |
US5724121A (en) * | 1995-05-12 | 1998-03-03 | Hughes Danbury Optical Systems, Inc. | Mounting member method and apparatus with variable length supports |
US6229595B1 (en) | 1995-05-12 | 2001-05-08 | The B. F. Goodrich Company | Lithography system and method with mask image enlargement |
US5888120A (en) * | 1997-09-29 | 1999-03-30 | Lsi Logic Corporation | Method and apparatus for chemical mechanical polishing |
US6229871B1 (en) * | 1999-07-20 | 2001-05-08 | Euv Llc | Projection lithography with distortion compensation using reticle chuck contouring |
JP2001332609A (ja) * | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
WO2001078108A2 (en) * | 2000-04-10 | 2001-10-18 | Motorola, Inc. | Wafer chuck having piezoelectric elements and method |
US6650135B1 (en) | 2000-06-29 | 2003-11-18 | Motorola, Inc. | Measurement chuck having piezoelectric elements and method |
US6313567B1 (en) * | 2000-04-10 | 2001-11-06 | Motorola, Inc. | Lithography chuck having piezoelectric elements, and method |
US6509952B1 (en) * | 2000-05-23 | 2003-01-21 | Silicon Valley Group, Inc. | Method and system for selective linewidth optimization during a lithographic process |
US6556281B1 (en) * | 2000-05-23 | 2003-04-29 | Asml Us, Inc. | Flexible piezoelectric chuck and method of using the same |
JP4086651B2 (ja) * | 2002-12-24 | 2008-05-14 | キヤノン株式会社 | 露光装置及び基板保持装置 |
EP1500984B1 (en) * | 2003-07-23 | 2014-02-26 | ASML Netherlands B.V. | Article holder for a lithographic apparatus |
TWI254188B (en) * | 2003-07-23 | 2006-05-01 | Asml Netherlands Bv | Lithographic projection apparatus and article holder therefor |
SG110196A1 (en) * | 2003-09-22 | 2005-04-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7414701B2 (en) * | 2003-10-03 | 2008-08-19 | Asml Holding N.V. | Method and systems for total focus deviation adjustments on maskless lithography systems |
US7019816B2 (en) * | 2003-12-17 | 2006-03-28 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US6950176B1 (en) * | 2004-01-12 | 2005-09-27 | Advanced Micro Devices, Inc. | Method and system for monitoring EUV lithography mask flatness |
WO2005083524A2 (de) * | 2004-02-26 | 2005-09-09 | Carl Zeiss Smt Ag | Verfahren zum ausrichten der oberfläche eines substrats |
DE102004010002B4 (de) * | 2004-03-01 | 2007-10-31 | Infineon Technologies Ag | Maskenhalter zum Halten einer lithografischen Reflexionsmaske und Verfahren |
US20070072128A1 (en) * | 2005-09-28 | 2007-03-29 | Frank Miceli | Method of manufacturing an integrated circuit to obtain uniform exposure in a photolithographic process |
JPWO2007135998A1 (ja) * | 2006-05-24 | 2009-10-01 | 株式会社ニコン | 保持装置及び露光装置 |
NL1036544A1 (nl) * | 2008-02-21 | 2009-08-24 | Asml Netherlands Bv | A lithographic apparatus having a chuck with a visco-elastic damping layer. |
WO2009125867A1 (ja) * | 2008-04-11 | 2009-10-15 | 株式会社ニコン | ステージ装置、露光装置、及びデバイス製造方法 |
DE102008052100B4 (de) * | 2008-10-08 | 2015-10-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Flexibel verformbares Halteelement für Substrate |
DE102008054072B4 (de) * | 2008-10-31 | 2017-06-08 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Selbstkorrigierendes Substrathaltesystem für die Fokussteuerung in Belichtungssystemen, Belichtungssystem und Verfahren zum Belichten eines Substrats |
KR101640766B1 (ko) * | 2009-12-01 | 2016-07-20 | 삼성전자주식회사 | 반사형 레티클 척, 그것을 포함하는 반사형 조명 시스템, 그것을 이용한 반사형 레티클의 평탄성을 개선하는 방법 및 반도체 소자를 제조하는 방법 |
WO2012110144A1 (en) * | 2011-02-18 | 2012-08-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method. |
NL2009874A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
DE102012105218A1 (de) * | 2012-06-15 | 2013-12-19 | Epcos Ag | Haltevorrichtung zum Festhalten eines Wafers und Verfahren zur Befestigung eines Wafers |
TWI563587B (en) * | 2013-01-31 | 2016-12-21 | Nanya Technology Corp | Wafer carrier, apparatus and method for processing wafer |
US11195743B2 (en) * | 2019-08-30 | 2021-12-07 | Taiwan Semiconductor Manufacturing Company Limited | Adjustable substrate support and adjustment method |
JP7256773B2 (ja) * | 2020-04-24 | 2023-04-12 | 信越化学工業株式会社 | 平坦性制御方法、塗膜の形成方法、平坦性制御装置、及び塗膜形成装置 |
JP2021189378A (ja) * | 2020-06-03 | 2021-12-13 | キヤノン株式会社 | 変形装置、露光装置、および物品の製造方法 |
US11587795B2 (en) * | 2020-09-28 | 2023-02-21 | Canon Kabushiki Kaisha | Planarization apparatus including superstrate chuck with bendable periphery |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093378A (en) * | 1976-11-01 | 1978-06-06 | International Business Machines Corporation | Alignment apparatus |
GB1588090A (en) * | 1978-05-16 | 1981-04-15 | Standard Telephones Cables Ltd | Mask alignment for semiconductor processing |
FR2429447A1 (fr) * | 1978-06-23 | 1980-01-18 | Thomson Csf | Systeme optique de projection muni d'un positionneur de plaque |
GB2063524B (en) * | 1978-10-20 | 1982-12-22 | Hitachi Ltd | Method of positioning a wafer in a projection aligner |
US4425038A (en) * | 1981-10-19 | 1984-01-10 | The Perkin-Elmer Corporation | Technique to modify wafer geometry |
JPS59106118A (ja) * | 1982-12-10 | 1984-06-19 | Hitachi Ltd | 薄板変形装置 |
US4537498A (en) * | 1984-05-03 | 1985-08-27 | At&T Technologies, Inc. | Focal plane adjusted photomask and methods of projecting images onto photosensitized workpiece surfaces |
-
1986
- 1986-04-14 KR KR1019860002815A patent/KR900001241B1/ko not_active IP Right Cessation
- 1986-04-16 US US06/852,729 patent/US4666291A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900001241B1 (ko) | 1990-03-05 |
US4666291A (en) | 1987-05-19 |
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