KR860008598A - 광노출장치 - Google Patents

광노출장치 Download PDF

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Publication number
KR860008598A
KR860008598A KR1019860002815A KR860002815A KR860008598A KR 860008598 A KR860008598 A KR 860008598A KR 1019860002815 A KR1019860002815 A KR 1019860002815A KR 860002815 A KR860002815 A KR 860002815A KR 860008598 A KR860008598 A KR 860008598A
Authority
KR
South Korea
Prior art keywords
thin plate
shape
exposure apparatus
chuck platen
optical exposure
Prior art date
Application number
KR1019860002815A
Other languages
English (en)
Other versions
KR900001241B1 (ko
Inventor
모도야 다니구지
아사히로 구니
유이지 후나쯔
유기오 겜보
유기오 겝보
아기라 이나가기
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60080171A external-priority patent/JPS61239638A/ja
Priority claimed from JP60134084A external-priority patent/JPS61292918A/ja
Priority claimed from JP60219047A external-priority patent/JPH0642508B2/ja
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게, 가부시기가이샤 히다찌 세이사꾸쇼 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR860008598A publication Critical patent/KR860008598A/ko
Application granted granted Critical
Publication of KR900001241B1 publication Critical patent/KR900001241B1/ko

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric
    • G03F9/7053Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/703Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details

Abstract

내용 없음

Description

광노출장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예의 광노출장치를 표시한 투시도.
제2도는 본 장치에서 사용되는 박판변형 메카니즘(mechanism)의 실시예를 표시한 평면도.
제3도는 제2도에서 선 A-A'를 따라 취한 종단면도.

Claims (7)

  1. 박판 변형 메카니즘을 갖는 광노출장치로서, 상기의 메카니즘이 다음의 것으로 구성되는 것 : 박판을 그 윗면에 진공흡입시키기 위한 척 플래튼으로서, 상기의 척 플래튼은 그의 아랫면에 다수의 망으로 이루어진 그리드형태로 도안된 구멍을 뚫지않은 슬릿으로 구성되어 척플래튼을 상기한 망근처의 벤딩라인을 따라 소성변형을 시킬 수 있도록하며; 그리고, 상기의 박판을 원하는 형태로 변형시키기 위하여 개개의 망을 수직적으로 변형시키기 위한 다수의 수직이동기로서, 패턴으로 구성된 또 다른 박판과 패턴이 전사되는 상기의 박판사이의 간격을 균일하게 유지시키는 것.
  2. 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 슬릿의 끝이 U자형이나 V자형으로 끝나는 것.
  3. 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 수직이동기가 전기적 신호를 상기의 수직이동기에 공급하기 위하여 프린트 회로판과 접촉하는 적극을 갖는 것.
  4. 청구범위 제1항의 광노출장치에 있어서, 그 내부에 상기의 망이 삼각형인 것.
  5. 다음의 것들로 구성되는 박막변형 메카니즘 : 윗면을 박판에 진공흡입시키기 위한 척 플래튼으로서, 상기의 척 플래튼을 다수의 망으로 이루어진 그리드형태로 도안된 구멍이 뚫리지 않은 슬릿으로 이루어진 아랫면을 갖고 상기의 망근처에서 벤딩라인을 따라 척 플래튼을 변형시킬 수 있으며, 그리고 상기의 박판을 원하는 형태로 변형시키기 위해 개개의 망을 수직적으로 변형시키기 위한 다수의 수직이동기.
  6. 청구범위 제5항의 박판변형 메카니즘에 있어서, 그 내부에 상기의 슬릿의 끝이 U자형이나 V자형으로 끝나는 것.
  7. 청구범위 제5항의 박판변형 메카니즘에 있어서, 그 내부에 상기의 망이 삼각형인 것.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860002815A 1985-04-17 1986-04-14 광 노출 장치 KR900001241B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP60080171A JPS61239638A (ja) 1985-04-17 1985-04-17 薄板平担化チヤツク
JP60-80171 1985-04-17
JP134084 1985-06-21
JP60-134084 1985-06-21
JP60134084A JPS61292918A (ja) 1985-06-21 1985-06-21 薄板平坦化チヤツク
JP60219047A JPH0642508B2 (ja) 1985-10-03 1985-10-03 薄板変形装置およびプロキシミティ露光装置
JP60-2101047 1985-10-03
JP219047 1985-10-03
JP80171 1986-04-09

Publications (2)

Publication Number Publication Date
KR860008598A true KR860008598A (ko) 1986-11-17
KR900001241B1 KR900001241B1 (ko) 1990-03-05

Family

ID=27303231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860002815A KR900001241B1 (ko) 1985-04-17 1986-04-14 광 노출 장치

Country Status (2)

Country Link
US (1) US4666291A (ko)
KR (1) KR900001241B1 (ko)

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JPS63172148A (ja) * 1987-01-12 1988-07-15 Hitachi Ltd 基板表面変形装置
WO1989006376A1 (en) * 1987-12-30 1989-07-13 Hampshire Instruments, Inc. Positioning subassembly for a lithography machine
JP2690960B2 (ja) * 1988-09-07 1997-12-17 株式会社日立製作所 拡大投影露光方法及びその装置
US5157438A (en) * 1992-02-04 1992-10-20 Dek Printing Machines Limited Workpiece support and clamping means
US5563684A (en) * 1994-11-30 1996-10-08 Sgs-Thomson Microelectronics, Inc. Adaptive wafer modulator for placing a selected pattern on a semiconductor wafer
US5724121A (en) * 1995-05-12 1998-03-03 Hughes Danbury Optical Systems, Inc. Mounting member method and apparatus with variable length supports
US6229595B1 (en) 1995-05-12 2001-05-08 The B. F. Goodrich Company Lithography system and method with mask image enlargement
US5888120A (en) * 1997-09-29 1999-03-30 Lsi Logic Corporation Method and apparatus for chemical mechanical polishing
US6229871B1 (en) * 1999-07-20 2001-05-08 Euv Llc Projection lithography with distortion compensation using reticle chuck contouring
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
WO2001078108A2 (en) * 2000-04-10 2001-10-18 Motorola, Inc. Wafer chuck having piezoelectric elements and method
US6650135B1 (en) 2000-06-29 2003-11-18 Motorola, Inc. Measurement chuck having piezoelectric elements and method
US6313567B1 (en) * 2000-04-10 2001-11-06 Motorola, Inc. Lithography chuck having piezoelectric elements, and method
US6509952B1 (en) * 2000-05-23 2003-01-21 Silicon Valley Group, Inc. Method and system for selective linewidth optimization during a lithographic process
US6556281B1 (en) * 2000-05-23 2003-04-29 Asml Us, Inc. Flexible piezoelectric chuck and method of using the same
JP4086651B2 (ja) * 2002-12-24 2008-05-14 キヤノン株式会社 露光装置及び基板保持装置
EP1500984B1 (en) * 2003-07-23 2014-02-26 ASML Netherlands B.V. Article holder for a lithographic apparatus
TWI254188B (en) * 2003-07-23 2006-05-01 Asml Netherlands Bv Lithographic projection apparatus and article holder therefor
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US7414701B2 (en) * 2003-10-03 2008-08-19 Asml Holding N.V. Method and systems for total focus deviation adjustments on maskless lithography systems
US7019816B2 (en) * 2003-12-17 2006-03-28 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6950176B1 (en) * 2004-01-12 2005-09-27 Advanced Micro Devices, Inc. Method and system for monitoring EUV lithography mask flatness
WO2005083524A2 (de) * 2004-02-26 2005-09-09 Carl Zeiss Smt Ag Verfahren zum ausrichten der oberfläche eines substrats
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JPWO2007135998A1 (ja) * 2006-05-24 2009-10-01 株式会社ニコン 保持装置及び露光装置
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WO2009125867A1 (ja) * 2008-04-11 2009-10-15 株式会社ニコン ステージ装置、露光装置、及びデバイス製造方法
DE102008052100B4 (de) * 2008-10-08 2015-10-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flexibel verformbares Halteelement für Substrate
DE102008054072B4 (de) * 2008-10-31 2017-06-08 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Selbstkorrigierendes Substrathaltesystem für die Fokussteuerung in Belichtungssystemen, Belichtungssystem und Verfahren zum Belichten eines Substrats
KR101640766B1 (ko) * 2009-12-01 2016-07-20 삼성전자주식회사 반사형 레티클 척, 그것을 포함하는 반사형 조명 시스템, 그것을 이용한 반사형 레티클의 평탄성을 개선하는 방법 및 반도체 소자를 제조하는 방법
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US11195743B2 (en) * 2019-08-30 2021-12-07 Taiwan Semiconductor Manufacturing Company Limited Adjustable substrate support and adjustment method
JP7256773B2 (ja) * 2020-04-24 2023-04-12 信越化学工業株式会社 平坦性制御方法、塗膜の形成方法、平坦性制御装置、及び塗膜形成装置
JP2021189378A (ja) * 2020-06-03 2021-12-13 キヤノン株式会社 変形装置、露光装置、および物品の製造方法
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Also Published As

Publication number Publication date
KR900001241B1 (ko) 1990-03-05
US4666291A (en) 1987-05-19

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