KR860000703A - 글로우 방전분해에 의해 기재상에 필름을 퇴적시키기 위한 장치 및 그 방법 - Google Patents

글로우 방전분해에 의해 기재상에 필름을 퇴적시키기 위한 장치 및 그 방법 Download PDF

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KR860000703A
KR860000703A KR1019850004437A KR850004437A KR860000703A KR 860000703 A KR860000703 A KR 860000703A KR 1019850004437 A KR1019850004437 A KR 1019850004437A KR 850004437 A KR850004437 A KR 850004437A KR 860000703 A KR860000703 A KR 860000703A
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substrate
electrode
power
control circuit
film
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KR1019850004437A
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KR900001234B1 (ko
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요시히사 다와다 (외 3)
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니이노마비또
가네가후찌가가꾸고오교 가부시끼가이샤
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Priority claimed from JP59129519A external-priority patent/JPH0719750B2/ja
Priority claimed from JP59137547A external-priority patent/JPH0719751B2/ja
Application filed by 니이노마비또, 가네가후찌가가꾸고오교 가부시끼가이샤 filed Critical 니이노마비또
Publication of KR860000703A publication Critical patent/KR860000703A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09C—RECLAMATION OF CONTAMINATED SOIL
    • B09C1/00—Reclamation of contaminated soil
    • B09C1/02—Extraction using liquids, e.g. washing, leaching, flotation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/907—Corona or glow discharge means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Soil Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

글로우 방전분해에 의해 기재상에 필름을 퇴적시키기 위한 장치 및 그 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 1측 퇴적을 위해 수평으로 배치된 글로우방전 분해장치의 설명도. 제2도는 2측 퇴적을 위해 배치된 통상적인 2개 기재형글로우 방전 분해 장치의 설명도. 제3도는 2개의 독립적인 RF시스템을 포함하는 글로우방전 분해 장치의 설명도. 제4도는 본 발명에 따른 글로우방전 분해 장치의 1실시예의 설명도.
* 주요 도면 부호의 설명
2-절연체, 8-정합회로, 9-RF전원, 31,32-접지전극, 41,42:기재, 51,52-히이터, 61-가변 콘덴서 62-고정 콘덴서

Claims (15)

  1. 접지 전극, 기재, RF전극, RF전원, 정합회로 및 1개 이상의 전기요소를 갖는 제어회로도 구성되며, 상기 각 기재가 서로 평행하게 각 RF전극상방에 배치된 상기 접지전극상에 마련되며, 상기 RF 전극이 서로 평행하고 전기적으로 절연되게 배치되고, 상기 정합회로가 RF전원으로부터의 RF파워를 받기 위해 연결되며, 상기 제어회로가 정합 회로로부터의 RF파워를 받기 위해 연결되며, 제어회로의 출력이 RF전극에 RF파워를 공급하기 위해 연결되도록 개량된, 글로우 방전분해에 의해 기재 상에 필름을 퇴적시키기 위한 장치.
  2. 제1항에 있어서, 제어회로가 고정콘덴서와 가변콘덴서를 갖는 장치.
  3. 제1항에 있어서, 제어장치가 고정 유도자와 가변 유도자를 갖는 장치.
  4. 제1항에 있어서, 각기 RF전극과 접지 전극을 갖는 1내지 100개의 세트가 마련된 장치.
  5. 제1항에 있어서, RF전극에 일정한 거리를 유지하며 기재를 이동하는 기재 운반 수단에 의해 기재가 운반되는 장치.
  6. 제1항에 있어서, RF파워의 주파수가 1내지 100MHz인 장치.
  7. 제1항에 있어서, 기재를 가열하기 위한 히이터가 마련된 장치.
  8. 제2항에 있어서, 콘덴서가 RF전극에 직렬로 연결된 장치.
  9. 제2항에 있어서, 콘덴서가 병렬로 접지된 장치.
  10. 제3항에 있어서, 유도자가 RF전극에 직렬로 연결된 장치.
  11. 제3항에 있어서, 유도자가 병렬로 정지된 장치.
  12. 제5항에 있어서, 기재가 RF전극에 일정한 거리를 유지하면서 우측 및 좌측으로 이동하는 장치.
  13. 제5항에 있어서, 기재가 RF전극에 일정한 거리를 유지하면서 1방향으로 이동하는 장치.
  14. 접지 전극, 기재, RF전극, RF전원, 정합회로 및 제어회로로 구성된 장치에서, 제어회로를 경유하여 독립적으로 제어된 RF파워를 공급함으로써 각 RF전극에 걸쳐 플라즈마가 제어되어 기재 상에 필름을 이루게 하도록 개량된, 글로우 방전 분해에 의해 기재 상에 필름을 퇴적시키기 위한 방법.
  15. 제14항에 있어서, RF파워의 제어가 각 기재상에 균일한 필름을 이룩하기 위해 수행되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850004437A 1984-06-22 1985-06-21 글로우 방전 분해에 의해 기재 상에 필름을 퇴적시키기 위한 장치 및 그 방법 KR900001234B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59129519A JPH0719750B2 (ja) 1984-06-22 1984-06-22 グロ−放電型成膜装置
JP59-129519 1984-06-22
JP59137547A JPH0719751B2 (ja) 1984-07-02 1984-07-02 成膜方法
JP59-137547 1984-07-02

Publications (2)

Publication Number Publication Date
KR860000703A true KR860000703A (ko) 1986-01-30
KR900001234B1 KR900001234B1 (ko) 1990-03-05

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KR1019850004437A KR900001234B1 (ko) 1984-06-22 1985-06-21 글로우 방전 분해에 의해 기재 상에 필름을 퇴적시키기 위한 장치 및 그 방법

Country Status (7)

Country Link
US (1) US4664890A (ko)
EP (1) EP0165618B1 (ko)
KR (1) KR900001234B1 (ko)
AU (1) AU591063B2 (ko)
CA (1) CA1269950A (ko)
DE (1) DE3586637T2 (ko)
IN (1) IN163964B (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3614398A1 (de) * 1985-07-01 1987-01-08 Balzers Hochvakuum Anordnung zum behandeln von werkstuecken mit einer evakuierbaren kammer
US5133986A (en) * 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
GB2259185B (en) * 1991-08-20 1995-08-16 Bridgestone Corp Method and apparatus for surface treatment
WO1995006544A1 (en) * 1993-09-01 1995-03-09 Speedfam Corporation Backing pad for machining operations
JP3387616B2 (ja) * 1994-04-18 2003-03-17 キヤノン株式会社 プラズマ処理装置
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
JP3437376B2 (ja) 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
AUPP156698A0 (en) * 1998-01-30 1998-02-19 Pacific Solar Pty Limited New method for hydrogen passivation
US6774569B2 (en) * 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
JP2004288984A (ja) * 2003-03-24 2004-10-14 Sharp Corp 成膜装置及び成膜方法
JP4185483B2 (ja) * 2004-10-22 2008-11-26 シャープ株式会社 プラズマ処理装置
JP2006196681A (ja) * 2005-01-13 2006-07-27 Sharp Corp プラズマ処理装置および同装置により製造された半導体素子
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
US20090169341A1 (en) * 2008-01-01 2009-07-02 Dongguan Anwell Digital Machinery Ltd. Method and system for handling objects in chambers
TWI429098B (zh) * 2008-06-06 2014-03-01 Ulvac Inc 薄膜太陽能電池製造裝置
WO2010033713A2 (en) * 2008-09-17 2010-03-25 Energy Photovoltaics, Inc. Large batch production of thin photovoltaic modules
WO2010033712A2 (en) * 2008-09-17 2010-03-25 Energy Photovoltaics, Inc. Electrode system for large batch production of thin photovoltaic modules
US20110300694A1 (en) * 2008-11-12 2011-12-08 Ulvac, Inc. Electrode circuit, film formation device, electrode unit, and film formation method
US8842357B2 (en) 2008-12-31 2014-09-23 View, Inc. Electrochromic device and method for making electrochromic device
US9664974B2 (en) * 2009-03-31 2017-05-30 View, Inc. Fabrication of low defectivity electrochromic devices
KR101151419B1 (ko) * 2010-07-30 2012-06-01 주식회사 플라즈마트 Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
KR101288130B1 (ko) * 2011-07-13 2013-07-19 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
TWI465757B (zh) 2011-07-15 2014-12-21 Ind Tech Res Inst 單光子電腦斷層掃描儀以及其掃描方法
CN103140011A (zh) * 2011-11-30 2013-06-05 亚树科技股份有限公司 直立式电浆产生装置
FR3004465B1 (fr) * 2013-04-11 2015-05-08 Ion Beam Services Machine d'implantation ionique presentant une productivite accrue

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
US4109157A (en) * 1975-12-18 1978-08-22 Kawasaki Jukogyo Kabushiki Kaisha Apparatus for ion-nitriding
US4252595A (en) * 1976-01-29 1981-02-24 Tokyo Shibaura Electric Co., Ltd. Etching apparatus using a plasma
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
JPS5846057B2 (ja) * 1979-03-19 1983-10-14 富士通株式会社 プラズマ処理方法
US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4381965A (en) * 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
DE3483800D1 (de) * 1983-05-10 1991-02-07 Toshiba Kawasaki Kk Verfahren zum reaktiven ionenaetzen.
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma

Also Published As

Publication number Publication date
AU4394085A (en) 1986-01-02
DE3586637T2 (de) 1993-01-07
US4664890A (en) 1987-05-12
AU591063B2 (en) 1989-11-30
IN163964B (ko) 1988-12-17
DE3586637D1 (de) 1992-10-22
EP0165618B1 (en) 1992-09-16
KR900001234B1 (ko) 1990-03-05
EP0165618A3 (en) 1989-02-08
CA1269950C (en) 1990-06-05
CA1269950A (en) 1990-06-05
EP0165618A2 (en) 1985-12-27

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