KR900017175A - 반도체박막의 형성방법 - Google Patents

반도체박막의 형성방법 Download PDF

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Publication number
KR900017175A
KR900017175A KR1019900005240A KR900005240A KR900017175A KR 900017175 A KR900017175 A KR 900017175A KR 1019900005240 A KR1019900005240 A KR 1019900005240A KR 900005240 A KR900005240 A KR 900005240A KR 900017175 A KR900017175 A KR 900017175A
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KR
South Korea
Prior art keywords
thin film
semiconductor thin
forming
substrate
forming semiconductor
Prior art date
Application number
KR1019900005240A
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English (en)
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KR930010092B1 (ko
Inventor
요시노리 이시다
마사도 고야마
노브히로 후꾸다
Original Assignee
사와무라 하루오
미쯔이도오아쯔가가꾸 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from JP1096349A external-priority patent/JPH02276241A/ja
Priority claimed from JP1096348A external-priority patent/JPH02276240A/ja
Application filed by 사와무라 하루오, 미쯔이도오아쯔가가꾸 가부시기가이샤 filed Critical 사와무라 하루오
Publication of KR900017175A publication Critical patent/KR900017175A/ko
Application granted granted Critical
Publication of KR930010092B1 publication Critical patent/KR930010092B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H01L21/205—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음.

Description

반도체박막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명을 실시하기 위한 비정질 반도체박막 제조장치를 표시한 모식도.
제 2 도는 직류전압을 -100로부터 +100로 변화시킨 경우에 형성한 반도체박막의 형성속도의 변화를 표시한 그래프.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 기판홀더
3 : 기판가열히터 4 : 고주파전극
5 : 고주파전원 6 : 저역통과필터
7 : 정합회로 8 : 정전압전원
9 : 가스공급계

Claims (4)

  1. 기판위에 비정질반도체박막을 형성하는 방법으로서, 적어도 글로우 방전을 발생시키기 위한 고주파 전극을구비한 반응용기를 준비하고, 상기 전극에 교류전압을 인가함과 동시에 , 이 교류전압과는 독립적으로 상기 전극에 전류전압을 인가하고, 반응성가스를 반응용기내에 공급해서 이 반응 가스의 글로우방전을 발생, 유지시키고,기판위에 반도체 박막을 형성하는 것을 특징으로 하는 반도체 박막의 형성방법.
  2. 제 1 항에 있어서, 상기 기판이 유리로 이루어진 것을 특징으로 하는 반도체박막의 형성방법.
  3. 제 1 항 또는 제 2 항에 있어서, 상기 기판이 도전성 기판인 것을 특징으로 하는 반도체박막의 형성방법.
  4. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005240A 1989-04-18 1990-04-16 반도체박막의 형성방법 KR930010092B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1096349A JPH02276241A (ja) 1989-04-18 1989-04-18 半導体薄膜の形成方法
JP1-96348 1989-04-18
JP96348 1989-04-18
JP1096348A JPH02276240A (ja) 1989-04-18 1989-04-18 非晶質半導体薄膜の形成方法
JP96349 1989-04-18
JP1-96349 1989-04-18

Publications (2)

Publication Number Publication Date
KR900017175A true KR900017175A (ko) 1990-11-15
KR930010092B1 KR930010092B1 (ko) 1993-10-14

Family

ID=26437562

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005240A KR930010092B1 (ko) 1989-04-18 1990-04-16 반도체박막의 형성방법

Country Status (5)

Country Link
EP (1) EP0393985B1 (ko)
KR (1) KR930010092B1 (ko)
AU (1) AU622310B2 (ko)
CA (1) CA2014540A1 (ko)
DE (1) DE69013965T2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0407088B1 (en) * 1989-06-28 1998-05-06 Mitsui Chemicals, Inc. Method of forming an amorphous semiconductor film
GB9125771D0 (en) * 1991-12-04 1992-02-05 Electrotech Equipments Ltd Deposition apparatus and methods
DE102009002129A1 (de) * 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung

Also Published As

Publication number Publication date
KR930010092B1 (ko) 1993-10-14
CA2014540A1 (en) 1990-10-18
DE69013965D1 (de) 1994-12-15
EP0393985A2 (en) 1990-10-24
EP0393985B1 (en) 1994-11-09
AU5361290A (en) 1990-10-25
DE69013965T2 (de) 1995-05-18
AU622310B2 (en) 1992-04-02
EP0393985A3 (en) 1991-02-06

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