KR900017175A - 반도체박막의 형성방법 - Google Patents
반도체박막의 형성방법 Download PDFInfo
- Publication number
- KR900017175A KR900017175A KR1019900005240A KR900005240A KR900017175A KR 900017175 A KR900017175 A KR 900017175A KR 1019900005240 A KR1019900005240 A KR 1019900005240A KR 900005240 A KR900005240 A KR 900005240A KR 900017175 A KR900017175 A KR 900017175A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- semiconductor thin
- forming
- substrate
- forming semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims 5
- 239000000758 substrate Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H01L21/205—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명을 실시하기 위한 비정질 반도체박막 제조장치를 표시한 모식도.
제 2 도는 직류전압을 -100로부터 +100로 변화시킨 경우에 형성한 반도체박막의 형성속도의 변화를 표시한 그래프.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 기판홀더
3 : 기판가열히터 4 : 고주파전극
5 : 고주파전원 6 : 저역통과필터
7 : 정합회로 8 : 정전압전원
9 : 가스공급계
Claims (4)
- 기판위에 비정질반도체박막을 형성하는 방법으로서, 적어도 글로우 방전을 발생시키기 위한 고주파 전극을구비한 반응용기를 준비하고, 상기 전극에 교류전압을 인가함과 동시에 , 이 교류전압과는 독립적으로 상기 전극에 전류전압을 인가하고, 반응성가스를 반응용기내에 공급해서 이 반응 가스의 글로우방전을 발생, 유지시키고,기판위에 반도체 박막을 형성하는 것을 특징으로 하는 반도체 박막의 형성방법.
- 제 1 항에 있어서, 상기 기판이 유리로 이루어진 것을 특징으로 하는 반도체박막의 형성방법.
- 제 1 항 또는 제 2 항에 있어서, 상기 기판이 도전성 기판인 것을 특징으로 하는 반도체박막의 형성방법.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1096348A JPH02276240A (ja) | 1989-04-18 | 1989-04-18 | 非晶質半導体薄膜の形成方法 |
JP1-96349 | 1989-04-18 | ||
JP96348 | 1989-04-18 | ||
JP96349 | 1989-04-18 | ||
JP1096349A JPH02276241A (ja) | 1989-04-18 | 1989-04-18 | 半導体薄膜の形成方法 |
JP1-96348 | 1989-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900017175A true KR900017175A (ko) | 1990-11-15 |
KR930010092B1 KR930010092B1 (ko) | 1993-10-14 |
Family
ID=26437562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900005240A KR930010092B1 (ko) | 1989-04-18 | 1990-04-16 | 반도체박막의 형성방법 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0393985B1 (ko) |
KR (1) | KR930010092B1 (ko) |
AU (1) | AU622310B2 (ko) |
CA (1) | CA2014540A1 (ko) |
DE (1) | DE69013965T2 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69032290T2 (de) * | 1989-06-28 | 1999-03-18 | Mitsui Chemicals, Inc., Tokio/Tokyo | Verfahren zur Herstellung einer amorphen Halbleiterschicht |
GB9125771D0 (en) * | 1991-12-04 | 1992-02-05 | Electrotech Equipments Ltd | Deposition apparatus and methods |
DE102009002129A1 (de) * | 2009-04-02 | 2010-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2904171A1 (de) * | 1979-02-05 | 1980-08-14 | Siemens Ag | Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung |
-
1990
- 1990-04-12 CA CA002014540A patent/CA2014540A1/en not_active Abandoned
- 1990-04-16 KR KR1019900005240A patent/KR930010092B1/ko not_active IP Right Cessation
- 1990-04-17 DE DE69013965T patent/DE69013965T2/de not_active Expired - Fee Related
- 1990-04-17 EP EP90304104A patent/EP0393985B1/en not_active Expired - Lifetime
- 1990-04-17 AU AU53612/90A patent/AU622310B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE69013965T2 (de) | 1995-05-18 |
KR930010092B1 (ko) | 1993-10-14 |
EP0393985A2 (en) | 1990-10-24 |
EP0393985B1 (en) | 1994-11-09 |
AU622310B2 (en) | 1992-04-02 |
EP0393985A3 (en) | 1991-02-06 |
DE69013965D1 (de) | 1994-12-15 |
AU5361290A (en) | 1990-10-25 |
CA2014540A1 (en) | 1990-10-18 |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
O035 | Opposition [patent]: request for opposition | ||
E701 | Decision to grant or registration of patent right | ||
O073 | Decision to grant registration after opposition [patent]: decision to grant registration | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19961002 Year of fee payment: 4 |
|
LAPS | Lapse due to unpaid annual fee |