KR850000726A - 가변 사이클로 리프레시를 행하는 회로를 갖는 반도체 메모리 - Google Patents

가변 사이클로 리프레시를 행하는 회로를 갖는 반도체 메모리

Info

Publication number
KR850000726A
KR850000726A KR1019840002996A KR840002996A KR850000726A KR 850000726 A KR850000726 A KR 850000726A KR 1019840002996 A KR1019840002996 A KR 1019840002996A KR 840002996 A KR840002996 A KR 840002996A KR 850000726 A KR850000726 A KR 850000726A
Authority
KR
South Korea
Prior art keywords
refreshing
circuit
semiconductor memory
variable cycles
cycles
Prior art date
Application number
KR1019840002996A
Other languages
English (en)
Other versions
KR930001651B1 (ko
Inventor
가즈히로 시모하가시
마사하루 구보
가즈기 미야우지
도시아기 마스하라
오사무 미나도
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR850000726A publication Critical patent/KR850000726A/ko
Application granted granted Critical
Publication of KR930001651B1 publication Critical patent/KR930001651B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Power Sources (AREA)
KR1019840002996A 1983-06-06 1984-05-30 가변 사이클로 리프레시를 행하는 회로를 갖는 반도체 메모리 KR930001651B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99341 1983-06-06
JP58099341A JPS59227090A (ja) 1983-06-06 1983-06-06 不揮発性メモリ装置

Publications (2)

Publication Number Publication Date
KR850000726A true KR850000726A (ko) 1985-03-09
KR930001651B1 KR930001651B1 (ko) 1993-03-08

Family

ID=14244914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840002996A KR930001651B1 (ko) 1983-06-06 1984-05-30 가변 사이클로 리프레시를 행하는 회로를 갖는 반도체 메모리

Country Status (5)

Country Link
US (1) US4672586A (ko)
EP (2) EP0385516A3 (ko)
JP (1) JPS59227090A (ko)
KR (1) KR930001651B1 (ko)
CA (1) CA1222050A (ko)

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JPS6150287A (ja) * 1984-08-20 1986-03-12 Toshiba Corp ダイナミツクメモリの自動リフレツシユ制御回路
US4985870A (en) * 1986-07-02 1991-01-15 Dallas Semiconductor Corporation Apparatus for connecting electronic modules containing integrated circuits and backup batteries
FR2608804B1 (fr) * 1986-12-22 1991-10-31 Matra Communication Module d'extension pour terminal de teleinformatique
GB8801472D0 (en) * 1988-01-22 1988-02-24 Int Computers Ltd Dynamic random-access memory
US5144586A (en) * 1988-12-22 1992-09-01 Dallas Semiconductor Corporation Apparatus and method for connecting electronic modules containing integrated circuits and backup batteries
EP0425693B1 (en) * 1989-05-08 1996-09-04 Hitachi Maxell, Ltd. Memory cartridge and memory control method
US5430681A (en) * 1989-05-08 1995-07-04 Hitachi Maxell, Ltd. Memory cartridge and its memory control method
JP2614514B2 (ja) * 1989-05-19 1997-05-28 三菱電機株式会社 ダイナミック・ランダム・アクセス・メモリ
AU7310291A (en) * 1990-01-19 1991-08-05 Dallas Semiconductor Corporation Serial dram controller with transparent refresh
EP0467208B1 (en) * 1990-07-11 1995-09-20 Hitachi, Ltd. Digital information system
KR920022293A (ko) * 1991-05-16 1992-12-19 김광호 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
JP2998944B2 (ja) * 1991-12-19 2000-01-17 シャープ株式会社 リングオシレータ
US5781784A (en) * 1992-07-09 1998-07-14 Zilog, Inc. Dynamic power management of solid state memories
JP3214107B2 (ja) * 1992-11-09 2001-10-02 富士電機株式会社 電池搭載集積回路装置
JPH07141865A (ja) * 1993-06-28 1995-06-02 Mitsubishi Electric Corp 発振回路および半導体記憶装置
US6379835B1 (en) 1999-01-12 2002-04-30 Morgan Adhesives Company Method of making a thin film battery
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8535396B2 (en) 2002-08-09 2013-09-17 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
CN101931097B (zh) 2004-12-08 2012-11-21 希莫菲克斯公司 LiCoO2的沉积
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR100702031B1 (ko) * 2006-02-22 2007-03-30 삼성전자주식회사 배터리 결합 반도체소자
JP2010505044A (ja) 2006-09-29 2010-02-18 インフィニット パワー ソリューションズ， インコーポレイテッド フレキシブル基板のマスキングおよびフレキシブル基板上にバッテリ層を堆積させるための材料拘束
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
KR20150128817A (ko) 2007-12-21 2015-11-18 사푸라스트 리써치 엘엘씨 전해질 막을 위한 표적을 스퍼터링하는 방법
WO2009089417A1 (en) 2008-01-11 2009-07-16 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
EP2332127A4 (en) 2008-09-12 2011-11-09 Infinite Power Solutions Inc ENERGY DEVICE HAVING AN INTEGRATED CONDUCTIVE SURFACE FOR DATA COMMUNICATION VIA ELECTROMAGNETIC ENERGY AND ASSOCIATED METHOD
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
KR101575812B1 (ko) * 2009-01-21 2015-12-09 삼성전자주식회사 자가전원 반도체 장치를 갖는 데이터 저장장치
DE102009020731A1 (de) * 2009-05-11 2010-11-25 Continental Automotive Gmbh Verfahren und Steuereinheit zum Betreiben eines flüchtigen Speichers, Schaltungsanordnung und Fahrtenschreiber
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
KR101930561B1 (ko) 2010-06-07 2018-12-18 사푸라스트 리써치 엘엘씨 재충전 가능한 고밀도 전기 화학 장치

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US3705392A (en) * 1971-09-07 1972-12-05 Texas Instruments Inc Mos dynamic memory
US3859638A (en) * 1973-05-31 1975-01-07 Intersil Inc Non-volatile memory unit with automatic standby power supply
DE2654403A1 (de) * 1976-12-01 1978-07-13 Honeywell Inf Systems Schaltungsanordnung zur erzeugung einer vorspannung fuer eine gruppe von speicherelementen
US4209710A (en) * 1978-06-27 1980-06-24 Honeywell Inc. Battery back-up regulator
US4214172A (en) * 1979-02-15 1980-07-22 Telxon Corporation Interlock for power sources in data processing apparatus
JPS57109183A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Non-volatile memory
JPS5956291A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd Ｍｏｓ記憶装置
US4492876A (en) * 1983-07-18 1985-01-08 At&T Bell Laboratories Power supply switching arrangement

Also Published As

Publication number Publication date
CA1222050A (en) 1987-05-19
JPS59227090A (ja) 1984-12-20
EP0128427A2 (en) 1984-12-19
EP0385516A2 (en) 1990-09-05
US4672586A (en) 1987-06-09
EP0385516A3 (en) 1991-03-20
KR930001651B1 (ko) 1993-03-08
EP0128427A3 (en) 1988-06-15

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
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