KR840004310A - 황화카드듐 태양전지 - Google Patents

황화카드듐 태양전지 Download PDF

Info

Publication number
KR840004310A
KR840004310A KR1019830000924A KR830000924A KR840004310A KR 840004310 A KR840004310 A KR 840004310A KR 1019830000924 A KR1019830000924 A KR 1019830000924A KR 830000924 A KR830000924 A KR 830000924A KR 840004310 A KR840004310 A KR 840004310A
Authority
KR
South Korea
Prior art keywords
copper
layer
sulfide layer
constant speed
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019830000924A
Other languages
English (en)
Korean (ko)
Inventor
존 바세트 피터 (외 1)
Original Assignee
원본미기재
프루떽 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 프루떽 리미티드 filed Critical 원본미기재
Publication of KR840004310A publication Critical patent/KR840004310A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
KR1019830000924A 1982-03-08 1983-03-08 황화카드듐 태양전지 Withdrawn KR840004310A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE82301152,3 1982-03-08
EP82301152A EP0091998A1 (en) 1982-03-08 1982-03-08 Cadmium sulphide solar cells

Publications (1)

Publication Number Publication Date
KR840004310A true KR840004310A (ko) 1984-10-10

Family

ID=8189594

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830000924A Withdrawn KR840004310A (ko) 1982-03-08 1983-03-08 황화카드듐 태양전지

Country Status (16)

Country Link
US (1) US4463215A (cg-RX-API-DMAC10.html)
EP (1) EP0091998A1 (cg-RX-API-DMAC10.html)
JP (1) JPS58212185A (cg-RX-API-DMAC10.html)
KR (1) KR840004310A (cg-RX-API-DMAC10.html)
AR (1) AR230897A1 (cg-RX-API-DMAC10.html)
AU (1) AU1212583A (cg-RX-API-DMAC10.html)
BR (1) BR8301111A (cg-RX-API-DMAC10.html)
CA (1) CA1194970A (cg-RX-API-DMAC10.html)
DK (1) DK100983A (cg-RX-API-DMAC10.html)
ES (1) ES520376A0 (cg-RX-API-DMAC10.html)
GR (1) GR77860B (cg-RX-API-DMAC10.html)
IL (1) IL68061A0 (cg-RX-API-DMAC10.html)
NO (1) NO830781L (cg-RX-API-DMAC10.html)
NZ (1) NZ203464A (cg-RX-API-DMAC10.html)
ZA (1) ZA831566B (cg-RX-API-DMAC10.html)
ZW (1) ZW6083A1 (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1207421A (en) * 1983-11-14 1986-07-08 Ottilia F. Toth High efficiency stable cds cu.sub.2s solar cells manufacturing process using thick film methodology
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
DE3542111A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Verfahren zur durchfuehrung eines glimmprozesses
DE3542116A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Photovoltaische zelle
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104420A (en) * 1975-08-25 1978-08-01 Photon Power, Inc. Photovoltaic cell
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4239553A (en) * 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4267398A (en) * 1979-05-29 1981-05-12 University Of Delaware Thin film photovoltaic cells
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4260428A (en) * 1980-03-05 1981-04-07 Ses, Incorporated Photovoltaic cell

Also Published As

Publication number Publication date
AU1212583A (en) 1983-09-15
AR230897A1 (es) 1984-07-31
DK100983D0 (da) 1983-02-28
ES8404570A1 (es) 1984-04-16
US4463215A (en) 1984-07-31
GR77860B (cg-RX-API-DMAC10.html) 1984-09-25
EP0091998A1 (en) 1983-10-26
CA1194970A (en) 1985-10-08
ZW6083A1 (en) 1983-05-25
ZA831566B (en) 1983-11-30
NO830781L (no) 1983-09-09
BR8301111A (pt) 1983-11-22
ES520376A0 (es) 1984-04-16
JPS58212185A (ja) 1983-12-09
IL68061A0 (en) 1983-06-15
NZ203464A (en) 1985-07-12
DK100983A (da) 1983-09-09

Similar Documents

Publication Publication Date Title
JPS5536950A (en) Manufacturing of thin film photocell
KR840004310A (ko) 황화카드듐 태양전지
JPS55158649A (en) Manufacture of electrode wiring
ES467972A1 (es) Un metodo mejorado de fabricar un conjunto integrado de pi- las fotovoltaicas.
EP0024615A3 (en) Electrode for photovoltaic cell and method of manufacturing it
JPS5772368A (en) Fusing type semiconductor device and its manufacture
JPS56130977A (en) Solar battery
JPS5494431A (en) Electric contact material
JPS5661175A (en) Thin-film solar cell
JPS572584A (en) Thermoelectric element and manufacture thereof
JPS577976A (en) Photo electromotive force element
JPS5745288A (en) Thin film photo diode
JPS51142980A (en) Photo resistance layer formation method
JPS5617059A (en) Semiconductor switching element
JPS52127157A (en) Manufacture of semiconductor
JPS6430260A (en) Read-only memory device
JPS5583268A (en) Complementary mos semiconductor device and method of fabricating the same
GB1078866A (en) Improvements in or relating to methods of providing surface layers on a carrier
JPS55158682A (en) Photoconductive cell and manufacture thereof
JPS577963A (en) Charge transfer element
JPS5494430A (en) Electric contact material
JPS5736872A (en) Photovoltaic module
SU1829804A1 (ru) Способ изготовления полупроводниковых оптоэлектронных приборов
JPS6411379A (en) Superconducting film structure
KR880004583A (ko) Cu₂S/Cds태양전지의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19830308

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid