KR840001796B1 - 쇼트기 장벽 광기전 고체 복사선 탐지기 - Google Patents

쇼트기 장벽 광기전 고체 복사선 탐지기 Download PDF

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Publication number
KR840001796B1
KR840001796B1 KR1019810000528A KR810000528A KR840001796B1 KR 840001796 B1 KR840001796 B1 KR 840001796B1 KR 1019810000528 A KR1019810000528 A KR 1019810000528A KR 810000528 A KR810000528 A KR 810000528A KR 840001796 B1 KR840001796 B1 KR 840001796B1
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KR
South Korea
Prior art keywords
substrate
film
window
infrared
detector
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Expired
Application number
KR1019810000528A
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English (en)
Korean (ko)
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KR830005727A (ko
Inventor
엘 하나겔 게리
래거 게리티이
트워델 빅터에이
엠 해리슨 조우지프
Original Assignee
제네랄 다이나밋크스 코오포레이션
랠프 이이 호오즈 쥬니어
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Publication of KR830005727A publication Critical patent/KR830005727A/ko
Application granted granted Critical
Publication of KR840001796B1 publication Critical patent/KR840001796B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)
KR1019810000528A 1980-03-07 1981-02-19 쇼트기 장벽 광기전 고체 복사선 탐지기 Expired KR840001796B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US?128325? 1980-03-07
US06/128,325 US4319258A (en) 1980-03-07 1980-03-07 Schottky barrier photovoltaic detector
US128,325 1980-03-07

Publications (2)

Publication Number Publication Date
KR830005727A KR830005727A (ko) 1983-09-09
KR840001796B1 true KR840001796B1 (ko) 1984-10-20

Family

ID=22434786

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810000528A Expired KR840001796B1 (ko) 1980-03-07 1981-02-19 쇼트기 장벽 광기전 고체 복사선 탐지기

Country Status (18)

Country Link
US (1) US4319258A (enExample)
JP (2) JPS56135983A (enExample)
KR (1) KR840001796B1 (enExample)
AU (1) AU519933B2 (enExample)
BE (1) BE887599A (enExample)
CA (1) CA1159133A (enExample)
CH (1) CH641913A5 (enExample)
DE (2) DE3106215C2 (enExample)
DK (1) DK157584C (enExample)
ES (1) ES8206849A1 (enExample)
FR (1) FR2477779B1 (enExample)
IL (1) IL62119A (enExample)
IT (1) IT1170735B (enExample)
MY (1) MY8500875A (enExample)
NL (1) NL189790C (enExample)
NO (1) NO159627C (enExample)
PT (1) PT72551B (enExample)
SE (1) SE459055B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533933A (en) * 1982-12-07 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Schottky barrier infrared detector and process
JPS59161083A (ja) * 1983-02-28 1984-09-11 Yokogawa Hewlett Packard Ltd フオト・ダイオ−ド
FR2557371B1 (fr) * 1983-12-27 1987-01-16 Thomson Csf Dispositif photosensible comportant entre les detecteurs des zones opaques au rayonnement a detecter, et procede de fabrication
JPS60253958A (ja) * 1984-05-31 1985-12-14 Sharp Corp センサ
US4942442A (en) * 1986-04-11 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Device including a radiation sensor
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
JPS63183128U (enExample) * 1987-05-18 1988-11-25
DE3876869D1 (de) * 1987-06-22 1993-02-04 Landis & Gyr Betriebs Ag Photodetektor fuer ultraviolett und verfahren zur herstellung.
JPH02149632U (enExample) * 1989-05-22 1990-12-20
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
US5557148A (en) * 1993-03-30 1996-09-17 Tribotech Hermetically sealed semiconductor device
US5406122A (en) * 1993-10-27 1995-04-11 Hughes Aircraft Company Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer
KR100211070B1 (ko) * 1994-08-19 1999-07-15 아끼구사 나오유끼 반도체 장치 및 그 제조방법
DE102005027220A1 (de) * 2005-06-13 2006-12-14 Siemens Ag Festkörperdetektor zur Aufnahme von Röntgenabbildungen
US9985058B2 (en) 2016-09-28 2018-05-29 Raytheon Company Dual band ultraviolet (UV) and infrared radiation detector
US9929192B1 (en) * 2016-09-28 2018-03-27 Raytheon Company Ultraviolet (UV) schottky diode detector having single crystal UV radiation detector material bonded directly to a support structure with proper c-axis orientation

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2688564A (en) * 1950-11-22 1954-09-07 Rca Corp Method of forming cadmium sulfide photoconductive cells
US2820841A (en) * 1956-05-10 1958-01-21 Clevite Corp Photovoltaic cells and methods of fabricating same
US2844640A (en) * 1956-05-11 1958-07-22 Donald C Reynolds Cadmium sulfide barrier layer cell
DE1223472B (de) * 1957-10-07 1966-08-25 Lab Fuer Strahlungstechnik G M Lichtempfindlicher Gleichrichter
NL280579A (enExample) * 1961-07-10
BE630443A (enExample) * 1962-04-03
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
US3571915A (en) * 1967-02-17 1971-03-23 Clevite Corp Method of making an integrated solar cell array
US3577631A (en) * 1967-05-16 1971-05-04 Texas Instruments Inc Process for fabricating infrared detector arrays and resulting article of manufacture
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3597270A (en) * 1968-08-15 1971-08-03 Trw Inc Inverted solid state diode
US3806779A (en) * 1969-10-02 1974-04-23 Omron Tateisi Electronics Co Semiconductor device and method of making same
NL7007171A (enExample) * 1970-05-16 1971-11-18
DE2112812C2 (de) * 1971-03-17 1984-02-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung
US3888697A (en) * 1971-10-23 1975-06-10 Licentia Gmbh Photocell
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US4000502A (en) * 1973-11-05 1976-12-28 General Dynamics Corporation Solid state radiation detector and process
US3980915A (en) * 1974-02-27 1976-09-14 Texas Instruments Incorporated Metal-semiconductor diode infrared detector having semi-transparent electrode
JPS50151487A (enExample) * 1974-05-24 1975-12-05
US4001858A (en) * 1974-08-28 1977-01-04 Bell Telephone Laboratories, Incorporated Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices
DE2444490C2 (de) 1974-09-18 1982-08-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Mikrowellendiode
DE2445548A1 (de) * 1974-09-24 1976-04-01 Baldwin Co D H Photoelement
US4016643A (en) * 1974-10-29 1977-04-12 Raytheon Company Overlay metallization field effect transistor
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
JPS6244825A (ja) * 1985-08-22 1987-02-26 Nec Corp 端末装置

Also Published As

Publication number Publication date
PT72551B (en) 1982-03-12
IL62119A0 (en) 1981-03-31
AU6737481A (en) 1981-09-24
DK157584C (da) 1990-07-02
SE459055B (sv) 1989-05-29
JPS62216276A (ja) 1987-09-22
NO159627B (no) 1988-10-10
FR2477779A1 (fr) 1981-09-11
NL189790B (nl) 1993-02-16
US4319258A (en) 1982-03-09
BE887599A (fr) 1981-08-20
NO159627C (no) 1989-01-18
DK77181A (da) 1981-09-08
IT8147840A0 (it) 1981-02-19
NL189790C (nl) 1993-07-16
DE3106215A1 (de) 1982-01-21
DE3153186C2 (de) 1985-10-10
NO810570L (no) 1981-09-08
PT72551A (en) 1981-03-01
CH641913A5 (fr) 1984-03-15
MY8500875A (en) 1985-12-31
SE8100885L (sv) 1981-09-08
CA1159133A (en) 1983-12-20
JPS56135983A (en) 1981-10-23
KR830005727A (ko) 1983-09-09
IL62119A (en) 1983-11-30
ES499645A0 (es) 1982-08-16
FR2477779B1 (fr) 1986-04-25
DK157584B (da) 1990-01-22
IT1170735B (it) 1987-06-03
JPH0421353B2 (enExample) 1992-04-09
ES8206849A1 (es) 1982-08-16
DE3106215C2 (de) 1985-06-27
AU519933B2 (en) 1982-01-07
NL8100868A (nl) 1981-10-01
JPS6244825B2 (enExample) 1987-09-22

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