KR840001386A - 집적 회로 칩에선을 접착하는 방법 및 장치 - Google Patents

집적 회로 칩에선을 접착하는 방법 및 장치 Download PDF

Info

Publication number
KR840001386A
KR840001386A KR1019820003705A KR820003705A KR840001386A KR 840001386 A KR840001386 A KR 840001386A KR 1019820003705 A KR1019820003705 A KR 1019820003705A KR 820003705 A KR820003705 A KR 820003705A KR 840001386 A KR840001386 A KR 840001386A
Authority
KR
South Korea
Prior art keywords
lead frame
pulse
lead
circuit chip
pulsed power
Prior art date
Application number
KR1019820003705A
Other languages
English (en)
Inventor
에이. 쿠르츠 존 (외 1)
Original Assignee
넬슨 스톤
훼어챠일드 카메라 앤드 인스트루먼트 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 넬슨 스톤, 훼어챠일드 카메라 앤드 인스트루먼트 코포레이션 filed Critical 넬슨 스톤
Publication of KR840001386A publication Critical patent/KR840001386A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

내용 없음

Description

집적 회로 칩에선을 접착하는 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따라 도선 프레임 휭거 상에 배치된 예열 전극의 개략도. 제2A도는 도선 프레임 휭거에 도선을 접착시키는 방법을 도시한 본 발명에 따른 깊은 "프들(puddle) 접착" 또는 용융 풀(pool) 내에 형성된 접착형태의 단면도. 제2B도는 본 발명에 따라 도선 프레임 휭거에 도선을 얕은 "프들 접착"형태의 단면도. 제2C도는 본 발명에 따라 도선 프레임 휭거에 도선을 표면 접착시키는 방법을 도시한 도면, 제2D도는 본 발명에 사용하기 위한 구리 합금 코어(core)와 스테인레스 스틸로된 외부 층을 갖고 있는 도선 프레임 휭거의 측단면도.

Claims (22)

  1. 선의 한 단부가 이미 도선 프레임 상의 회로 칩에 접착되어 있는 경우에 금속 도선 프레임 휭거에 도선 또는 접착선을 용접하기 위한 방법에 있어서, 도선 프레임 휭거가 회로 칩과 전기적 또는 열적 결합으로부터 절연되어 있는 동안도선이 전기 에너지를 인가함으로써 접착되도록 도선 프레임 휭거를 회로 칩을 손상시킬 수 있는 안전레벨 이상의 온도로 예열시키는 수단, 예열된 도선 프레임 휭거에 도선의 단면을 접착시키는 수단, 및 도선 프레임 휭거에서 상기 접착부에 인접한 상기 도선을 절단시키는 수단을 포함하는 것을 특징으로 하는 집적 회로 칩에 선을 접착시키는 방법.
  2. 제1항에 있어서, 예열 수단이 상기 도선 프레임을 포함하는 금속의 용융점 이하의 온도로 상기 도선 프레임 휭거를 가열시키는 수단을 포함하고 예열된 도선 프레임 휭거에 도선의 단면을 접착시키는 수단이 열-압축 접착 또는 초음파 접착 방법을 포함하는 것을 특징으로 하는 방법.
  3. 제2항에 있어서, 도선 프레임 휭거 및 접착을 냉각시키는 수단을 포함하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 냉각 수단이 도선 프레임 휭거 및 접착부상에서의 불활성 가스의 흐름을 조종하는 수단을 포함하는 것을 특징으로 하는 방법.
  5. 제1항에 있어서, 예열수단이 상기 도선 프레임 휭거의 표면부를 용융시킴으로써 도선 프레임 휭거와 회로 칩사이에서 전기 또는 열 결합하기 전에 상기 표면내에 용융풀을 형성하는 수단을 포함하고, 도선프레임 휭거에 도선의 단면을 접착시키는 수단이 상기 용융풀내에 선의 단면을 침하시키는 수단 및 풀이 경화되도록 하는 수단을 포함하는 것을 특징으로 하는 방법.
  6. 제5항에 있어서, 도선이 도선 프레임 휭거를 포함하는 금속의 용융점 보다 높은 용융점을 가진 금속으로 구성된 것을 특징으로 하는 방법.
  7. 제5항 또는 제6항에 있어서, 표면부를 용융시키는 수단이 용융풀의 위치에서의 상기 도선 프레임 휭거의 두께의 1/3보다 크지 않은 깊이로 용융풀을 형성하는 수단을 포함하는 것을 특징으로 하는 방법.
  8. 제5항, 제7항 또는 제7항에 있어서, 표면부를 용융시키는 수단이 도선 프레임 휭거의 폭의 1/2보다 작은 폭을 가진 용융풀을 형성하는 수단을 포함하는 것을 특징으로 하는 방법.
  9. 제5항 내지 제8항중의 어느 한 항에 있어서, 도선 프레임휭거가 구리 합금으로된 내부 코어 위에 형성된 스테인레스 스틸로된 외부 층을 포함하고 용융풀이 스테인레스 스틸층에 제한된 것을 특징으로 하는 방법.
  10. 제5항 내지 제8항 중의 어느 한 항에 있어서, 상기 도선 프레임 휭거가 스테인레스 스틸로 된 외부층을 포함하고 용융풀이 스테인레스 스틸 층내에 형성된 것을 특징으로 하는 방법.
  11. 제5항 내지 제10항중 어느 한 항에 있어서, 용융 및 용접 수단 동안 불활성 가스가 도선 프레임 휭거를 흐르게 하는 수단을 특징을 하는 방법.
  12. 상기 항들 중의 어느 한 항에 있어서, 예열 수단이, 접착하기 위해 도선 프레임 휭거 상의 바람직한 위치에 전극 및 도선 프레임 휭거를 상대적으로 배치시키는 수단, 제어된 에너지량을 전달하기 위해제어된 기간의 전기 펄스대열을 발생시키는 수단 및 예정된 온도로 예열시키기 위해 전극과 도선 프레임 휭거 사이에서 상기 펄스를 방전시키는 수단을 포함하는 것을 특징으로 하는 방법.
  13. 제12항에 있어서, 제어된 펄스대열을 발생시키는 수단이 전극과 도선 프레임 휭거 표면 사이에서 가스를 이온화시키기 위해 고전압 및 저전류에서 제1펼스 스파이크를 발생시키는 수단 및 도선 프레임 휭거를 예열시키기 위한 에너지를 전달하기 위해 저전압 및 고전류의 제2펄스대열을 발생시키는 수단을 포함하는 것을 특징으로 하는 방법.
  14. 제12항 또는 제13항에 있어서, 도선 프레임 휭거에 전달된 제어된 에너지 량을 변화시키기 위해 상기 펄스대열의 기간을 변화시켜서 펄스의 수를 변화시킴으로써 도선 프레임 휭거에서의 예열 온도를 변화시키는 수단을 특징으로 하는 방법.
  15. 상기 항들중의 어느 한 항에 있어서, 도선 프레임 휭거로부터 열을 제거하기 위해 방열판에 도선 프레임의 댐 바아를 결합시키는 수단을 특징으로 하는 방법.
  16. 선의 한단부가 이미 도선 프레임 상의 회로 칩에 집착되어 있는 경우에 금속 도선 프레임 휭거에 도선 또는 접착선을 용접하기 위한 장치에 있어서, 상기 도선 프레임 휭거가 회로 칩과 전기적 또는 열적결합으로 부터 절연되어 있는 동안 도선이 전기 에너지를 인가함으로써 접착되도록 도선 프레임 휭거를 회로 칩에 손상이 생길 수 있는 안전 레벨이상의 온도로 예열시키기 위한 장치, 예열된 도선 프레임 휭거에 도선의 단면을 접착시키기 위한 장치, 및 도선 프레임휭거에서 상기 접착부에 인접한 상기 도선을 절단시키기 위한 장치를 특징으로 하는 집적 회로 칩에 선을 접착시키는 장치.
  17. 제16항에 있어서, 선-프레임-스트립-공급장치, 전극 장치 및 선택된 도선 프레임 휭거와 모세관 선 지지 공구 및 모세관 선 지지 공구의 장착 장치로 위에 상기 전극 장치를 배치시키기 위한 전극 장착 장치를 포함하고, 저면 및 측면 벽을 포함하는 불활성 가스 봉입 장치. 상기 봉임장치를 통해 도선 프레임의 스트립을 공급하는 공급 장치. 및 상기 봉입 장치내에 장착되는 상기 모세관 선 지지 공구, 상기 봉입물내의 공간을 불활성 가스로 가득 채우기 위한 제1불활성 가스 전달 장치, 선택된 도선 프레임과 도선 프레임 휭거 부근을 냉각시키고 소제하기 위해 조종된 불활성 가스의 흐름을 전달하기 위한 제2 불활성 가스의 흐름을 전달하기 위한 제2불활성 가스 전달장치 및 바람직한 온도에 도달하도록 도선 프레임휭거에 재 어된 에너지량을 전달하기 위해 전극 장치와 선택된 도선프레임 휭거 사이에서 상기 펄스를 방전시키도록 제어된 기간의 전기 펄스대열을 발생시키기 위한 펄스 발생장치를 포함하는 상기 예열 장치를 특징으로 하는 장치.
  18. 제17항에 있어서, 상기 펄스 발생기 장치가 전극 장치와 도선 프레임 휭거 사이에서 가스의 이온화를 실시하도록 고전압 및 저전류의 최소한 1개의 펄스를 포함하는 제1 펄스를 발생시키기 위한 제1 펄스화 전원공급기 및 도선 프레임 휭거에 제어된 에너지 량을 전달하기 위해 고전압 및 저전류의 펄스를 포함하는 제어된 기간의 제2 펄스대열을 발생시키기 위한 제2 펄스화 전원 공급기를 포함하는 것을 특징으로 하는 장치.
  19. 제18항에 있어서, 상기 제1 펄스화 전원 공급기가 약 4KV 내지 10KV의 전압 범위내에서 최소한 1개의 펄스를 전달하도록 동작적으로 배열되고 상기 제2펄스화 전원공급기가 약 600V 내지 750V의 전압 범위내에서 펄스를 전달하도록 동작적으로 배열된 것을 특징으로 하는 장치.
  20. 제18항 또는 제19항에 있어서, 상기 제1 및 제2 펄스화 전원 공급기가 약 0 내지 1.5kKHz의 주파수 범위내에서 펄스를 전달하도록 구성되고 배열된 것을 특징으로 하는 장치.
  21. 제18항 내지 제20항 중의 어느 한 항에 있어서, 제1펄스장치의 최소한 1개의 펄스를 완성할 때 제2펄스 전원 공급기를 동작시키기 위해 제1 및 제2 펄스화 전원 공급기 사이에 동작적으로 결합된 논리 게이트 장치를 특징으로 하는 장치.
  22. 제18항 내지 제20항 중의 어느 한 항에 있어서, 제1 펄스화전원 공급기에 의해 이온화된 전류 경로가 설정될 때 제2 펄스화 전원 공급기를 동작시키기 위해 제1 및 제2 펄스화 전원 공급기 사이에 동작적으로 결합된 논리 게이트 장치를 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820003705A 1981-08-19 1982-08-18 집적 회로 칩에선을 접착하는 방법 및 장치 KR840001386A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US294411 1981-08-19
US06/294,411 US4434347A (en) 1981-08-19 1981-08-19 Lead frame wire bonding by preheating

Publications (1)

Publication Number Publication Date
KR840001386A true KR840001386A (ko) 1984-04-30

Family

ID=23133296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820003705A KR840001386A (ko) 1981-08-19 1982-08-18 집적 회로 칩에선을 접착하는 방법 및 장치

Country Status (8)

Country Link
US (1) US4434347A (ko)
EP (1) EP0073172A3 (ko)
JP (1) JPS5842248A (ko)
KR (1) KR840001386A (ko)
AU (1) AU556303B2 (ko)
BR (1) BR8204862A (ko)
CA (1) CA1187626A (ko)
MX (1) MX151763A (ko)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189643A (ja) * 1984-10-09 1986-05-07 Toshiba Corp 半導体装置及びその製造方法
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US4717066A (en) * 1986-02-24 1988-01-05 American Telephone And Telegraph Company, At&T Bell Laboratories Method of bonding conductors to semiconductor devices
JPH0699756B2 (ja) * 1986-06-26 1994-12-07 新日本製鐵株式会社 高強度高ｒ値冷延鋼板の製造方法
US5059559A (en) * 1987-11-02 1991-10-22 Hitachi, Ltd. Method of aligning and bonding tab inner leads
JPH03136340A (ja) * 1989-10-23 1991-06-11 Shinkawa Ltd ワイヤボンデイング方法及び装置
JPH05226407A (ja) * 1991-11-12 1993-09-03 Nec Corp 半導体装置の製造方法及び製造装置
NL9200396A (nl) * 1992-03-03 1993-10-01 Nedap Nv Radiofrequente identificatielabel met relatief grote detectie-afstand en een minimum aantal electronische componenten.
US20020053734A1 (en) * 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7073254B2 (en) * 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
US5673845A (en) 1996-06-17 1997-10-07 Micron Technology, Inc. Lead penetrating clamping system
US5890644A (en) 1996-01-26 1999-04-06 Micron Technology, Inc. Apparatus and method of clamping semiconductor devices using sliding finger supports
US5647528A (en) 1996-02-06 1997-07-15 Micron Technology, Inc. Bondhead lead clamp apparatus and method
US5954842A (en) * 1996-01-26 1999-09-21 Micron Technology, Inc. Lead finger clamp assembly
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US8033838B2 (en) * 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US6068174A (en) * 1996-12-13 2000-05-30 Micro)N Technology, Inc. Device and method for clamping and wire-bonding the leads of a lead frame one set at a time
US6121674A (en) 1998-02-23 2000-09-19 Micron Technology, Inc. Die paddle clamping method for wire bond enhancement
US6126062A (en) * 1998-04-02 2000-10-03 Micron Technology, Inc. Non-conductive and self-leveling leadframe clamp insert for wirebonding integrated circuits
US6634538B2 (en) 1998-04-02 2003-10-21 Micron Technology, Inc. Non-conductive and self-leveling leadframe clamp insert for wirebonding integrated circuits
US6031216A (en) * 1998-06-17 2000-02-29 National Semiconductor Corporation Wire bonding methods and apparatus for heat sensitive metallization using a thermally insulated support portion
US6158647A (en) 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
US6977214B2 (en) * 1998-12-11 2005-12-20 Micron Technology, Inc. Die paddle clamping method for wire bond enhancement
EP1306898A1 (en) * 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
US20030146500A1 (en) * 2002-02-04 2003-08-07 Stmicroelectronics S.R.L. Package for semiconductor device with ground lead connection having high stress resistance
US7404513B2 (en) * 2004-12-30 2008-07-29 Texas Instruments Incorporated Wire bonds having pressure-absorbing balls
DE102005043413A1 (de) * 2005-09-13 2007-03-15 Robert Bosch Gmbh Grundmodul für einen Bewegungssensor
US8439252B2 (en) * 2006-11-07 2013-05-14 Excelitas Technologies Gmbh & Co Kg Method for bonding metal surfaces, method for producing an object having cavities, object having cavities, structure of a light emitting diode
US20080197461A1 (en) * 2007-02-15 2008-08-21 Taiwan Semiconductor Manufacturing Co.,Ltd. Apparatus for wire bonding and integrated circuit chip package
DE202007008706U1 (de) * 2007-06-19 2007-09-13 Ultrasonics Steckmann Gmbh Ultraschall-Schweißstation
US20090014499A1 (en) * 2007-07-11 2009-01-15 Honeywell International Inc. Automated preform attach for vacuum packaging
CN102668325B (zh) * 2009-10-29 2014-12-17 日本电业工作株式会社 电力再生装置及电力再生方法、蓄电系统及蓄电方法、以及高频波装置
CN104215235B (zh) * 2013-06-05 2017-08-22 北京信息科技大学 一种新型钟形振子式角速率陀螺
CN104084659B (zh) * 2014-07-02 2016-04-20 佛山市施翔腾科技设备有限公司 采用热风焊接方法制备晶体管的生产方法
JP6463300B2 (ja) * 2016-05-20 2019-01-30 矢崎総業株式会社 端子化電線製造方法
US10818514B1 (en) * 2017-07-14 2020-10-27 Triad National Security, Llc Fine wire manipulator
US10381708B2 (en) 2017-10-30 2019-08-13 International Business Machines Corporation Superconducting resonator to limit vertical connections in planar quantum devices
JP6633719B1 (ja) * 2018-11-07 2020-01-22 電元社トーア株式会社 インバータ電源装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409977A (en) 1963-10-28 1968-11-12 Texas Instruments Inc Hot gas thermo-compression bonding
JPS4919634B1 (ko) * 1969-12-29 1974-05-18
FR2160764A1 (en) * 1971-11-26 1973-07-06 Radiotechnique Compelec Semiconductor component prodn machine - with thermocompression welder
GB1600021A (en) * 1977-07-26 1981-10-14 Welding Inst Electrical inter-connection method and apparatus
DE2919998A1 (de) * 1979-05-17 1980-11-27 Siemens Ag Befestigen der anschlussdraehte von halbleitersystemen auf den traegerelementen

Also Published As

Publication number Publication date
JPS5842248A (ja) 1983-03-11
AU556303B2 (en) 1986-10-30
EP0073172A2 (en) 1983-03-02
EP0073172A3 (en) 1985-01-16
AU8728182A (en) 1983-02-24
MX151763A (es) 1985-03-05
BR8204862A (pt) 1983-08-02
CA1187626A (en) 1985-05-21
US4434347A (en) 1984-02-28

Similar Documents

Publication Publication Date Title
KR840001386A (ko) 집적 회로 칩에선을 접착하는 방법 및 장치
US5298715A (en) Lasersonic soldering of fine insulated wires to heat-sensitive substrates
KR950001859A (ko) 반도체 전기 히터와 그 제조방법
US20060208838A1 (en) Method for producing an electrical connection between an aluminum conductor and a contact element
EP0064930A3 (en) Bonding wire ball forming method and apparatus
GB1536872A (en) Electrical inter-connection method and apparatus
EP2792490B1 (en) Method for controlling the temperature of a jetting device
JP4497792B2 (ja) マルテンサイトの生じないろう付けの方法及び装置
EP1111970A2 (en) Circuit board for use at high voltage
JP4080326B2 (ja) ろう材供給ノズル
US3444347A (en) Method for solder reflow connection of insulated conductors
JP2009160617A (ja) ヒータチップ及び接合装置
US3950631A (en) Device for welding a wire by means of thermo-compression bonding
JP3211580B2 (ja) はんだ付け装置
US2604570A (en) Electric connection and method for producing the same
JPH11245042A (ja) プラズマアーク溶接方法及び装置
US4013212A (en) Soldering method
US3284606A (en) Heat sink material and applications thereof
JPH0536748A (ja) ワイヤボンデイング装置
JP2015051897A (ja) 放電補助式レーザ孔加工方法
JP2017168508A (ja) 除去方法および製造方法
JP3152984B2 (ja) 基板型温度ヒュ−ズの製造方法
RU2697314C1 (ru) Способ электроэрозионной обработки детали
JPS5594761A (en) Method and device for repairing of mold cracking
JP2024513085A (ja) マルテンサイトフリーろう付けプロセスのための改善された方法及び構成