KR20260043103A - 금속 스퍼터링 타깃, 금속 스퍼터링 타깃 구조체 및 이것들을 사용한 막의 제조 방법, 그리고 금속 스퍼터링 타깃의 제조 방법 - Google Patents

금속 스퍼터링 타깃, 금속 스퍼터링 타깃 구조체 및 이것들을 사용한 막의 제조 방법, 그리고 금속 스퍼터링 타깃의 제조 방법

Info

Publication number
KR20260043103A
KR20260043103A KR1020267004277A KR20267004277A KR20260043103A KR 20260043103 A KR20260043103 A KR 20260043103A KR 1020267004277 A KR1020267004277 A KR 1020267004277A KR 20267004277 A KR20267004277 A KR 20267004277A KR 20260043103 A KR20260043103 A KR 20260043103A
Authority
KR
South Korea
Prior art keywords
sputtering target
orientation
metal sputtering
ingot
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020267004277A
Other languages
English (en)
Korean (ko)
Inventor
다이키 쇼노
다이가 곤도
히로유키 하라
마사미 메스다
Original Assignee
도소 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도소 가부시키가이샤 filed Critical 도소 가부시키가이샤
Publication of KR20260043103A publication Critical patent/KR20260043103A/ko
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020267004277A 2023-08-17 2024-08-15 금속 스퍼터링 타깃, 금속 스퍼터링 타깃 구조체 및 이것들을 사용한 막의 제조 방법, 그리고 금속 스퍼터링 타깃의 제조 방법 Pending KR20260043103A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2023-133069 2023-08-17
JP2023133069 2023-08-17
JP2023202660 2023-11-30
JPJP-P-2023-202660 2023-11-30
PCT/JP2024/029116 WO2025037642A1 (ja) 2023-08-17 2024-08-15 金属スパッタリングターゲット、金属スパッタリングターゲット構造体及びこれらを用いた膜の製造方法、並びに金属スパッタリングターゲットの製造方法

Publications (1)

Publication Number Publication Date
KR20260043103A true KR20260043103A (ko) 2026-03-31

Family

ID=94632577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020267004277A Pending KR20260043103A (ko) 2023-08-17 2024-08-15 금속 스퍼터링 타깃, 금속 스퍼터링 타깃 구조체 및 이것들을 사용한 막의 제조 방법, 그리고 금속 스퍼터링 타깃의 제조 방법

Country Status (4)

Country Link
JP (1) JPWO2025037642A1 (https=)
KR (1) KR20260043103A (https=)
TW (1) TW202509256A (https=)
WO (1) WO2025037642A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005071135A2 (en) * 2004-01-08 2005-08-04 Cabot Corporation Tantalum and other metals with (110) orientation
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JPWO2009107763A1 (ja) * 2008-02-29 2011-07-07 新日鉄マテリアルズ株式会社 金属系スパッタリングターゲット材
WO2010051040A1 (en) * 2008-11-03 2010-05-06 Tosoh Smd, Inc. Method of making a sputter target and sputter targets made thereby
JP2011089188A (ja) * 2009-10-26 2011-05-06 Ulvac Japan Ltd チタン含有スパッタリングターゲットの製造方法
CN111286703B (zh) * 2020-03-31 2021-12-10 贵研铂业股份有限公司 一种镍铂合金溅射靶材及其制备方法
JP2023133069A (ja) 2022-03-11 2023-09-22 株式会社リコー 液体吐出装置、および液体吐出方法

Also Published As

Publication number Publication date
WO2025037642A1 (ja) 2025-02-20
TW202509256A (zh) 2025-03-01
JPWO2025037642A1 (https=) 2025-02-20

Similar Documents

Publication Publication Date Title
Mireles et al. Additive manufacture of refractory alloy C103 for propulsion applications
AU2006243448B2 (en) Coating process for manufacture or reprocessing of sputter targets and X-ray anodes
CN101155650B (zh) 溅射靶
Marrocco et al. Corrosion performance of laser posttreated cold sprayed titanium coatings
CN103797153B (zh) Mo-W靶材及其制造方法
KR20110083640A (ko) 스퍼터 타겟 제조 방법 및 이에 의해 제조된 스퍼터 타겟
JP2011523978A (ja) モリブデン−ニオブ合金、かかる合金を含有するスパッタリングターゲット、かかるターゲットの製造方法、それから製造される薄膜、およびその使用
EP2853617A1 (en) Sputtering target
CN119553261A (zh) 具有多峰粒度分布的溅射阱
WO2007040014A1 (ja) スパッタリングターゲット
JP7108606B2 (ja) スパッタリングターゲット
KR20260043103A (ko) 금속 스퍼터링 타깃, 금속 스퍼터링 타깃 구조체 및 이것들을 사용한 막의 제조 방법, 그리고 금속 스퍼터링 타깃의 제조 방법
JP6602550B2 (ja) スパッタリングターゲット用材料
KR102224969B1 (ko) 이그니션을 안정화하는 것이 가능한 스퍼터링 타깃
JP2000343240A (ja) 微弱接合圧力で固相拡散接合した製品とその製造方法
WO2019044850A1 (ja) 部品および半導体製造装置
CN121986184A (en) Metal sputtering target, metal sputtering target structure, method for producing film using same, and method for producing metal sputtering target
US20250354251A1 (en) Metallic sputtering target, production method therefor, and metallic material and production method therefor
CN119855939A (zh) 溅射靶
CN118591653A (zh) 金属溅射靶及其制造方法、以及金属材料及其制造方法
JP6871301B2 (ja) スパッタリングターゲット、窒化チタン膜の製造方法、および半導体素子の製造方法
Singh et al. Effect of beam oscillation on microstructure, defect density, and resistivity of electron beam welded niobium
US12385126B2 (en) Sputtering target, method for producing same, and method for producing sputtering film using sputtering target
US12545991B2 (en) Coated member
EP4570943A1 (en) Molybdenum sputtering target, method for producing same, and method for producing sputtering film using molybdenum sputtering target

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)