KR20250168615A - 투영 노광 장치 - Google Patents

투영 노광 장치

Info

Publication number
KR20250168615A
KR20250168615A KR1020257036719A KR20257036719A KR20250168615A KR 20250168615 A KR20250168615 A KR 20250168615A KR 1020257036719 A KR1020257036719 A KR 1020257036719A KR 20257036719 A KR20257036719 A KR 20257036719A KR 20250168615 A KR20250168615 A KR 20250168615A
Authority
KR
South Korea
Prior art keywords
aberration
mask
substrate
mark
imaging unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257036719A
Other languages
English (en)
Korean (ko)
Inventor
켄이치 나카노
카즈유키 스즈키
료 오치아이
코지 와타나베
Original Assignee
하쿠토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하쿠토 가부시키가이샤 filed Critical 하쿠토 가부시키가이샤
Publication of KR20250168615A publication Critical patent/KR20250168615A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020257036719A 2023-12-26 2023-12-26 투영 노광 장치 Pending KR20250168615A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/046809 WO2025141733A1 (ja) 2023-12-26 2023-12-26 投影露光装置

Publications (1)

Publication Number Publication Date
KR20250168615A true KR20250168615A (ko) 2025-12-02

Family

ID=96217411

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257036719A Pending KR20250168615A (ko) 2023-12-26 2023-12-26 투영 노광 장치

Country Status (4)

Country Link
JP (1) JPWO2025141733A1 (https=)
KR (1) KR20250168615A (https=)
CN (1) CN121002451A (https=)
WO (1) WO2025141733A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950959A (ja) 1995-06-01 1997-02-18 Nikon Corp 投影露光装置
JPH09260273A (ja) 1996-03-26 1997-10-03 Canon Inc 露光装置
JPH1012520A (ja) 1996-06-21 1998-01-16 Nikon Corp 投影露光装置
JPH10172907A (ja) 1997-12-15 1998-06-26 Nikon Corp 投影露光装置及び方法
JPH11168062A (ja) 1991-04-24 1999-06-22 Nikon Corp 露光装置及び方法
US7403264B2 (en) 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
US20110027542A1 (en) 2009-07-28 2011-02-03 Nsk Ltd. Exposure apparatus and exposure method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5219534B2 (ja) * 2008-01-31 2013-06-26 キヤノン株式会社 露光装置及びデバイスの製造方法
JP2011192900A (ja) * 2010-03-16 2011-09-29 Nikon Corp 投影光学装置及び露光装置並びにデバイス製造方法
CN102253604B (zh) * 2010-05-21 2013-08-14 上海微电子装备有限公司 一种空间像的质量检测方法
JP2013004942A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法
JP2015170764A (ja) * 2014-03-07 2015-09-28 株式会社東芝 収差量算出方法および位置ずれ量算出方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168062A (ja) 1991-04-24 1999-06-22 Nikon Corp 露光装置及び方法
JPH0950959A (ja) 1995-06-01 1997-02-18 Nikon Corp 投影露光装置
JPH09260273A (ja) 1996-03-26 1997-10-03 Canon Inc 露光装置
JPH1012520A (ja) 1996-06-21 1998-01-16 Nikon Corp 投影露光装置
JPH10172907A (ja) 1997-12-15 1998-06-26 Nikon Corp 投影露光装置及び方法
US7403264B2 (en) 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
US20110027542A1 (en) 2009-07-28 2011-02-03 Nsk Ltd. Exposure apparatus and exposure method

Also Published As

Publication number Publication date
WO2025141733A1 (ja) 2025-07-03
CN121002451A (zh) 2025-11-21
JPWO2025141733A1 (https=) 2025-07-03

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