CN121002451A - 投影曝光装置 - Google Patents

投影曝光装置

Info

Publication number
CN121002451A
CN121002451A CN202380097397.8A CN202380097397A CN121002451A CN 121002451 A CN121002451 A CN 121002451A CN 202380097397 A CN202380097397 A CN 202380097397A CN 121002451 A CN121002451 A CN 121002451A
Authority
CN
China
Prior art keywords
aberration
substrate
mask
mark
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380097397.8A
Other languages
English (en)
Chinese (zh)
Inventor
仲野健一
铃木一之
落合亮
渡边幸二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hakuto Co Ltd
Original Assignee
Hakuto Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hakuto Co Ltd filed Critical Hakuto Co Ltd
Publication of CN121002451A publication Critical patent/CN121002451A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202380097397.8A 2023-12-26 2023-12-26 投影曝光装置 Pending CN121002451A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/046809 WO2025141733A1 (ja) 2023-12-26 2023-12-26 投影露光装置

Publications (1)

Publication Number Publication Date
CN121002451A true CN121002451A (zh) 2025-11-21

Family

ID=96217411

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380097397.8A Pending CN121002451A (zh) 2023-12-26 2023-12-26 投影曝光装置

Country Status (4)

Country Link
JP (1) JPWO2025141733A1 (https=)
KR (1) KR20250168615A (https=)
CN (1) CN121002451A (https=)
WO (1) WO2025141733A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209186B2 (ja) 1991-04-24 2001-09-17 株式会社ニコン 露光装置及び方法
JPH0950959A (ja) 1995-06-01 1997-02-18 Nikon Corp 投影露光装置
JP3604801B2 (ja) 1996-03-26 2004-12-22 キヤノン株式会社 露光装置および露光方法
JPH1012520A (ja) 1996-06-21 1998-01-16 Nikon Corp 投影露光装置
JP3031321B2 (ja) 1997-12-15 2000-04-10 株式会社ニコン 投影露光装置及び方法
US7403264B2 (en) 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
JP5219534B2 (ja) * 2008-01-31 2013-06-26 キヤノン株式会社 露光装置及びデバイスの製造方法
US20110027542A1 (en) 2009-07-28 2011-02-03 Nsk Ltd. Exposure apparatus and exposure method
JP2011192900A (ja) * 2010-03-16 2011-09-29 Nikon Corp 投影光学装置及び露光装置並びにデバイス製造方法
CN102253604B (zh) * 2010-05-21 2013-08-14 上海微电子装备有限公司 一种空间像的质量检测方法
JP2013004942A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法
JP2015170764A (ja) * 2014-03-07 2015-09-28 株式会社東芝 収差量算出方法および位置ずれ量算出方法

Also Published As

Publication number Publication date
WO2025141733A1 (ja) 2025-07-03
KR20250168615A (ko) 2025-12-02
JPWO2025141733A1 (https=) 2025-07-03

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