KR20250127158A - 금속 화합물, 감광성 조성물, 패턴 형성 방법, 기판의 제조 방법 - Google Patents

금속 화합물, 감광성 조성물, 패턴 형성 방법, 기판의 제조 방법

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Publication number
KR20250127158A
KR20250127158A KR1020257025050A KR20257025050A KR20250127158A KR 20250127158 A KR20250127158 A KR 20250127158A KR 1020257025050 A KR1020257025050 A KR 1020257025050A KR 20257025050 A KR20257025050 A KR 20257025050A KR 20250127158 A KR20250127158 A KR 20250127158A
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KR
South Korea
Prior art keywords
transition metal
compound
photosensitive composition
general formula
metal element
Prior art date
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Pending
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KR1020257025050A
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English (en)
Korean (ko)
Inventor
시게키 핫토리
가즈히로 나가야마
아카네 가토
히로키 야마모토
Original Assignee
미쯔비시 케미컬 주식회사
내셔널 인스티튜츠 포 퀀텀 사이언스 앤드 테크놀로지
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Application filed by 미쯔비시 케미컬 주식회사, 내셔널 인스티튜츠 포 퀀텀 사이언스 앤드 테크놀로지 filed Critical 미쯔비시 케미컬 주식회사
Publication of KR20250127158A publication Critical patent/KR20250127158A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16—Unsaturated compounds
    • C07C61/22—Unsaturated compounds having a carboxyl group bound to a six-membered ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16—Unsaturated compounds
    • C07C61/28—Unsaturated compounds polycyclic
    • C07C61/29—Unsaturated compounds polycyclic having a carboxyl group bound to a condensed ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005—Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020257025050A 2022-12-26 2023-12-22 금속 화합물, 감광성 조성물, 패턴 형성 방법, 기판의 제조 방법 Pending KR20250127158A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2022-208687 2022-12-26
JP2022208687 2022-12-26
JP2023169294 2023-09-29
JPJP-P-2023-169294 2023-09-29
PCT/JP2023/046175 WO2024143204A1 (ja) 2022-12-26 2023-12-22 金属化合物、感光性組成物、パターン形成方法、基板の製造方法

Publications (1)

Publication Number Publication Date
KR20250127158A true KR20250127158A (ko) 2025-08-26

Family

ID=91717619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257025050A Pending KR20250127158A (ko) 2022-12-26 2023-12-22 금속 화합물, 감광성 조성물, 패턴 형성 방법, 기판의 제조 방법

Country Status (5)

Country Link
EP (1) EP4644397A1 (https=)
JP (1) JPWO2024143204A1 (https=)
KR (1) KR20250127158A (https=)
TW (1) TW202436378A (https=)
WO (1) WO2024143204A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026005063A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 貧金属クラスター化合物、それを有する多量構造体、その製造方法、それを含む感光性組成物、この組成物を用いたパターン形成方法、基板及び基板の製造方法
WO2026005065A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 化合物、その化合物の製造方法、その化合物を含む感光性組成物、その組成物を用いたパターン形成方法、基板及び基板の製造方法

Citations (7)

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JP2001072716A (ja) 1999-07-12 2001-03-21 Internatl Business Mach Corp <Ibm> 有機金属重合体およびその使用
JP2011253185A (ja) 2010-06-01 2011-12-15 Inpria Corp パターン形成された無機層、放射線によるパターン形成組成物、およびそれに対応する方法
JP2012185484A (ja) 2011-02-15 2012-09-27 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2017173537A (ja) 2016-03-23 2017-09-28 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法
JP2021102604A (ja) 2019-12-24 2021-07-15 国立研究開発法人産業技術総合研究所 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法
JP2023013561A (ja) 2021-07-16 2023-01-26 三星電子株式会社 イオン性塩および感放射線レジスト組成物

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JPS57185276A (en) * 1981-05-11 1982-11-15 Sankyo Co Ltd Dihydro-dum-4 and dihydro-isodum-4 and their derivative
WO2007070092A2 (en) * 2005-12-09 2007-06-21 Pryog, Llc Metal-containing compositions and method of making same
EP1975705B1 (en) 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
US20240307560A1 (en) * 2020-12-31 2024-09-19 Da Zen Theranostics, Inc. Heptamethine carbocyanine dye-dota conjugates complexed with lutetium-177, yttrium-90, or gallium-68, and their uses for image-guided radiotherapy
CN113321688B (zh) * 2021-06-10 2022-03-29 大连理工大学 一种双功能催化剂及其在外环路反应工艺中制备环状碳酸酯、聚碳酸酯的方法

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Publication number Priority date Publication date Assignee Title
JP2001072716A (ja) 1999-07-12 2001-03-21 Internatl Business Mach Corp <Ibm> 有機金属重合体およびその使用
JP2011253185A (ja) 2010-06-01 2011-12-15 Inpria Corp パターン形成された無機層、放射線によるパターン形成組成物、およびそれに対応する方法
JP2012185484A (ja) 2011-02-15 2012-09-27 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2017173537A (ja) 2016-03-23 2017-09-28 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法
JP2021102604A (ja) 2019-12-24 2021-07-15 国立研究開発法人産業技術総合研究所 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法
JP2023013561A (ja) 2021-07-16 2023-01-26 三星電子株式会社 イオン性塩および感放射線レジスト組成物

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비특허문헌 1: Minoru Toriumi etc., Proc.SPIE, 9779(2016) 97790G
비특허문헌 2: Lianjia Wu etc., Proc.SPIE, 10957(2019) 109570B
비특허문헌 3: Neha Thakur etc., Proc.SPIE, 10957(2019) 10957D

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TW202436378A (zh) 2024-09-16
JPWO2024143204A1 (https=) 2024-07-04
WO2024143204A1 (ja) 2024-07-04

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