TW202436378A - 金屬化合物、感光性組合物、圖案形成方法、基板之製造方法 - Google Patents

金屬化合物、感光性組合物、圖案形成方法、基板之製造方法 Download PDF

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Publication number
TW202436378A
TW202436378A TW112150762A TW112150762A TW202436378A TW 202436378 A TW202436378 A TW 202436378A TW 112150762 A TW112150762 A TW 112150762A TW 112150762 A TW112150762 A TW 112150762A TW 202436378 A TW202436378 A TW 202436378A
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TW
Taiwan
Prior art keywords
compound
transition metal
photosensitive composition
general formula
producing
Prior art date
Application number
TW112150762A
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English (en)
Chinese (zh)
Inventor
服部繁樹
長山和弘
加藤茜
山本洋揮
Original Assignee
日商三菱化學股份有限公司
國立研究開發法人量子科學技術研究開發機構
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Publication of TW202436378A publication Critical patent/TW202436378A/zh

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16—Unsaturated compounds
    • C07C61/22—Unsaturated compounds having a carboxyl group bound to a six-membered ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16—Unsaturated compounds
    • C07C61/28—Unsaturated compounds polycyclic
    • C07C61/29—Unsaturated compounds polycyclic having a carboxyl group bound to a condensed ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005—Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW112150762A 2022-12-26 2023-12-26 金屬化合物、感光性組合物、圖案形成方法、基板之製造方法 TW202436378A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022-208687 2022-12-26
JP2022208687 2022-12-26
JP2023169294 2023-09-29
JP2023-169294 2023-09-29

Publications (1)

Publication Number Publication Date
TW202436378A true TW202436378A (zh) 2024-09-16

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TW112150762A TW202436378A (zh) 2022-12-26 2023-12-26 金屬化合物、感光性組合物、圖案形成方法、基板之製造方法

Country Status (5)

Country Link
EP (1) EP4644397A1 (https=)
JP (1) JPWO2024143204A1 (https=)
KR (1) KR20250127158A (https=)
TW (1) TW202436378A (https=)
WO (1) WO2024143204A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026005063A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 貧金属クラスター化合物、それを有する多量構造体、その製造方法、それを含む感光性組成物、この組成物を用いたパターン形成方法、基板及び基板の製造方法
WO2026005065A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 化合物、その化合物の製造方法、その化合物を含む感光性組成物、その組成物を用いたパターン形成方法、基板及び基板の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185276A (en) * 1981-05-11 1982-11-15 Sankyo Co Ltd Dihydro-dum-4 and dihydro-isodum-4 and their derivative
US6171757B1 (en) 1999-07-12 2001-01-09 International Business Machines Corporation Organometallic polymers and use thereof
WO2007070092A2 (en) * 2005-12-09 2007-06-21 Pryog, Llc Metal-containing compositions and method of making same
EP1975705B1 (en) 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP5708521B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6196897B2 (ja) 2013-12-05 2017-09-13 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP6389839B2 (ja) 2016-03-23 2018-09-12 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法
JP7644923B2 (ja) 2019-12-24 2025-03-13 国立研究開発法人産業技術総合研究所 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法
US20240307560A1 (en) * 2020-12-31 2024-09-19 Da Zen Theranostics, Inc. Heptamethine carbocyanine dye-dota conjugates complexed with lutetium-177, yttrium-90, or gallium-68, and their uses for image-guided radiotherapy
CN113321688B (zh) * 2021-06-10 2022-03-29 大连理工大学 一种双功能催化剂及其在外环路反应工艺中制备环状碳酸酯、聚碳酸酯的方法
JP7737106B2 (ja) 2021-07-16 2025-09-10 三星電子株式会社 イオン性塩および感放射線レジスト組成物

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EP4644397A1 (en) 2025-11-05
KR20250127158A (ko) 2025-08-26
JPWO2024143204A1 (https=) 2024-07-04
WO2024143204A1 (ja) 2024-07-04

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