JPWO2024143204A1 - - Google Patents

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Publication number
JPWO2024143204A1
JPWO2024143204A1 JP2024567743A JP2024567743A JPWO2024143204A1 JP WO2024143204 A1 JPWO2024143204 A1 JP WO2024143204A1 JP 2024567743 A JP2024567743 A JP 2024567743A JP 2024567743 A JP2024567743 A JP 2024567743A JP WO2024143204 A1 JPWO2024143204 A1 JP WO2024143204A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567743A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024143204A1 publication Critical patent/JPWO2024143204A1/ja
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16Unsaturated compounds
    • C07C61/22Unsaturated compounds having a carboxyl group bound to a six-membered ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C61/00Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C61/16Unsaturated compounds
    • C07C61/28Unsaturated compounds polycyclic
    • C07C61/29Unsaturated compounds polycyclic having a carboxyl group bound to a condensed ring system
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94Bismuth compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2024567743A 2022-12-26 2023-12-22 Pending JPWO2024143204A1 (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022208687 2022-12-26
JP2023169294 2023-09-29
PCT/JP2023/046175 WO2024143204A1 (ja) 2022-12-26 2023-12-22 金属化合物、感光性組成物、パターン形成方法、基板の製造方法

Publications (1)

Publication Number Publication Date
JPWO2024143204A1 true JPWO2024143204A1 (https=) 2024-07-04

Family

ID=91717619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567743A Pending JPWO2024143204A1 (https=) 2022-12-26 2023-12-22

Country Status (5)

Country Link
EP (1) EP4644397A1 (https=)
JP (1) JPWO2024143204A1 (https=)
KR (1) KR20250127158A (https=)
TW (1) TW202436378A (https=)
WO (1) WO2024143204A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026005063A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 貧金属クラスター化合物、それを有する多量構造体、その製造方法、それを含む感光性組成物、この組成物を用いたパターン形成方法、基板及び基板の製造方法
WO2026005065A1 (ja) * 2024-06-28 2026-01-02 三菱ケミカル株式会社 化合物、その化合物の製造方法、その化合物を含む感光性組成物、その組成物を用いたパターン形成方法、基板及び基板の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185276A (en) * 1981-05-11 1982-11-15 Sankyo Co Ltd Dihydro-dum-4 and dihydro-isodum-4 and their derivative
US6171757B1 (en) 1999-07-12 2001-01-09 International Business Machines Corporation Organometallic polymers and use thereof
WO2007070092A2 (en) * 2005-12-09 2007-06-21 Pryog, Llc Metal-containing compositions and method of making same
EP1975705B1 (en) 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP5708521B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6196897B2 (ja) 2013-12-05 2017-09-13 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP6389839B2 (ja) 2016-03-23 2018-09-12 株式会社先端ナノプロセス基盤開発センター 感光性組成物およびパターン形成方法
JP7644923B2 (ja) 2019-12-24 2025-03-13 国立研究開発法人産業技術総合研究所 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法
US20240307560A1 (en) * 2020-12-31 2024-09-19 Da Zen Theranostics, Inc. Heptamethine carbocyanine dye-dota conjugates complexed with lutetium-177, yttrium-90, or gallium-68, and their uses for image-guided radiotherapy
CN113321688B (zh) * 2021-06-10 2022-03-29 大连理工大学 一种双功能催化剂及其在外环路反应工艺中制备环状碳酸酯、聚碳酸酯的方法
JP7737106B2 (ja) 2021-07-16 2025-09-10 三星電子株式会社 イオン性塩および感放射線レジスト組成物

Also Published As

Publication number Publication date
EP4644397A1 (en) 2025-11-05
KR20250127158A (ko) 2025-08-26
TW202436378A (zh) 2024-09-16
WO2024143204A1 (ja) 2024-07-04

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