KR20250009483A - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

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Publication number
KR20250009483A
KR20250009483A KR1020247040930A KR20247040930A KR20250009483A KR 20250009483 A KR20250009483 A KR 20250009483A KR 1020247040930 A KR1020247040930 A KR 1020247040930A KR 20247040930 A KR20247040930 A KR 20247040930A KR 20250009483 A KR20250009483 A KR 20250009483A
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KR
South Korea
Prior art keywords
layer
memory
gate conductor
conductor layer
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020247040930A
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English (en)
Korean (ko)
Inventor
마사카즈 가쿠무
고지 사쿠이
노조무 하라다
Original Assignee
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 filed Critical 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Publication of KR20250009483A publication Critical patent/KR20250009483A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
KR1020247040930A 2022-06-10 2022-06-10 반도체 메모리 장치 Ceased KR20250009483A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/023426 WO2023238370A1 (ja) 2022-06-10 2022-06-10 半導体メモリ装置

Publications (1)

Publication Number Publication Date
KR20250009483A true KR20250009483A (ko) 2025-01-17

Family

ID=89076654

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247040930A Ceased KR20250009483A (ko) 2022-06-10 2022-06-10 반도체 메모리 장치

Country Status (6)

Country Link
US (1) US12362005B2 (https=)
JP (1) JPWO2023238370A1 (https=)
KR (1) KR20250009483A (https=)
CN (1) CN119366278A (https=)
TW (1) TWI863343B (https=)
WO (1) WO2023238370A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7705671B2 (ja) * 2022-03-16 2025-07-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体を用いたメモリ装置
WO2023238370A1 (ja) * 2022-06-10 2023-12-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体メモリ装置

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JPH02188966A (ja) 1989-01-17 1990-07-25 Toshiba Corp Ｍｏｓ型半導体装置
US20030111681A1 (en) 2001-12-14 2003-06-19 Kabushiki Kaisha Toshiba Semiconductor memory device and its manufacturing method
US20080137394A1 (en) 2006-12-12 2008-06-12 Renesas Technology Corp. Semiconductor memory device
JP7057032B1 (ja) 2020-12-25 2022-04-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

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WO2022219767A1 (ja) * 2021-04-15 2022-10-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有する半導体装置
WO2022234614A1 (ja) * 2021-05-06 2022-11-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022234656A1 (ja) * 2021-05-07 2022-11-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を有するメモリ装置
WO2022239193A1 (ja) * 2021-05-13 2022-11-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022239192A1 (ja) * 2021-05-13 2022-11-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022239199A1 (ja) * 2021-05-13 2022-11-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022269740A1 (ja) * 2021-06-22 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2022269737A1 (ja) * 2021-06-22 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2023281728A1 (ja) * 2021-07-09 2023-01-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2023058242A1 (ja) * 2021-10-08 2023-04-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02188966A (ja) 1989-01-17 1990-07-25 Toshiba Corp Ｍｏｓ型半導体装置
US20030111681A1 (en) 2001-12-14 2003-06-19 Kabushiki Kaisha Toshiba Semiconductor memory device and its manufacturing method
US20080137394A1 (en) 2006-12-12 2008-06-12 Renesas Technology Corp. Semiconductor memory device
JP7057032B1 (ja) 2020-12-25 2022-04-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

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Also Published As

Publication number Publication date
WO2023238370A1 (ja) 2023-12-14
US20230402089A1 (en) 2023-12-14
TW202406109A (zh) 2024-02-01
JPWO2023238370A1 (https=) 2023-12-14
US12362005B2 (en) 2025-07-15
TWI863343B (zh) 2024-11-21
CN119366278A (zh) 2025-01-24

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