JPWO2024214180A5 - - Google Patents
Info
- Publication number
- JPWO2024214180A5 JPWO2024214180A5 JP2025513541A JP2025513541A JPWO2024214180A5 JP WO2024214180 A5 JPWO2024214180 A5 JP WO2024214180A5 JP 2025513541 A JP2025513541 A JP 2025513541A JP 2025513541 A JP2025513541 A JP 2025513541A JP WO2024214180 A5 JPWO2024214180 A5 JP WO2024214180A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor layer
- layer
- impurity region
- region
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/014698 WO2024214180A1 (ja) | 2023-04-11 | 2023-04-11 | 半導体素子を用いたメモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024214180A1 JPWO2024214180A1 (https=) | 2024-10-17 |
| JPWO2024214180A5 true JPWO2024214180A5 (https=) | 2026-01-19 |
Family
ID=93016351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025513541A Pending JPWO2024214180A1 (https=) | 2023-04-11 | 2023-04-11 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12588186B2 (https=) |
| JP (1) | JPWO2024214180A1 (https=) |
| KR (1) | KR20250162811A (https=) |
| TW (1) | TWI892578B (https=) |
| WO (1) | WO2024214180A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Ｍｏｓ型半導体装置 |
| JP3808763B2 (ja) | 2001-12-14 | 2006-08-16 | 株式会社東芝 | 半導体メモリ装置およびその製造方法 |
| US20060192249A1 (en) | 2004-09-20 | 2006-08-31 | Samsung Electronics Co., Ltd. | Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same |
| KR100752661B1 (ko) * | 2005-04-09 | 2007-08-29 | 삼성전자주식회사 | 수직 방향의 게이트 전극을 갖는 전계효과 트랜지스터 및그 제조 방법 |
| JP5078338B2 (ja) | 2006-12-12 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US7919800B2 (en) | 2007-02-26 | 2011-04-05 | Micron Technology, Inc. | Capacitor-less memory cells and cell arrays |
| CN107592943B (zh) * | 2015-04-29 | 2022-07-15 | 芝诺半导体有限公司 | 提高漏极电流的mosfet和存储单元 |
| KR102905486B1 (ko) * | 2021-08-30 | 2025-12-29 | 삼성전자주식회사 | 반도체 장치 |
| KR102784170B1 (ko) | 2021-09-06 | 2025-03-19 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 반도체 소자를 사용한 메모리 장치 |
| JP7705670B2 (ja) * | 2022-02-01 | 2025-07-10 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
-
2023
- 2023-04-11 KR KR1020257032939A patent/KR20250162811A/ko active Pending
- 2023-04-11 WO PCT/JP2023/014698 patent/WO2024214180A1/ja not_active Ceased
- 2023-04-11 JP JP2025513541A patent/JPWO2024214180A1/ja active Pending
-
2024
- 2024-04-02 US US18/624,515 patent/US12588186B2/en active Active
- 2024-04-10 TW TW113113400A patent/TWI892578B/zh active
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