JPWO2024247113A5 - - Google Patents

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Publication number
JPWO2024247113A5
JPWO2024247113A5 JP2025523748A JP2025523748A JPWO2024247113A5 JP WO2024247113 A5 JPWO2024247113 A5 JP WO2024247113A5 JP 2025523748 A JP2025523748 A JP 2025523748A JP 2025523748 A JP2025523748 A JP 2025523748A JP WO2024247113 A5 JPWO2024247113 A5 JP WO2024247113A5
Authority
JP
Japan
Prior art keywords
impurity region
conductor layer
layer
region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025523748A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024247113A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/020110 external-priority patent/WO2024247113A1/ja
Publication of JPWO2024247113A1 publication Critical patent/JPWO2024247113A1/ja
Publication of JPWO2024247113A5 publication Critical patent/JPWO2024247113A5/ja
Pending legal-status Critical Current

Links

JP2025523748A 2023-05-30 2023-05-30 Pending JPWO2024247113A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/020110 WO2024247113A1 (ja) 2023-05-30 2023-05-30 半導体素子を用いたメモリ装置

Publications (2)

Publication Number Publication Date
JPWO2024247113A1 JPWO2024247113A1 (https=) 2024-12-05
JPWO2024247113A5 true JPWO2024247113A5 (https=) 2026-02-19

Family

ID=93652606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025523748A Pending JPWO2024247113A1 (https=) 2023-05-30 2023-05-30

Country Status (3)

Country Link
US (1) US20240404583A1 (https=)
JP (1) JPWO2024247113A1 (https=)
WO (1) WO2024247113A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3808763B2 (ja) * 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays
JP2012074684A (ja) * 2010-09-03 2012-04-12 Elpida Memory Inc 半導体装置およびその製造方法
CN107592943B (zh) * 2015-04-29 2022-07-15 芝诺半导体有限公司 提高漏极电流的mosfet和存储单元
KR102784170B1 (ko) * 2021-09-06 2025-03-19 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치

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