TWI892578B - 使用半導體元件的記憶裝置 - Google Patents

使用半導體元件的記憶裝置

Info

Publication number
TWI892578B
TWI892578B TW113113400A TW113113400A TWI892578B TW I892578 B TWI892578 B TW I892578B TW 113113400 A TW113113400 A TW 113113400A TW 113113400 A TW113113400 A TW 113113400A TW I892578 B TWI892578 B TW I892578B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor region
conductive layer
region
gate
Prior art date
Application number
TW113113400A
Other languages
English (en)
Chinese (zh)
Other versions
TW202450432A (zh
Inventor
各務正一
作井康司
原田望
Original Assignee
新加坡商新加坡優尼山帝斯電子私人有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新加坡商新加坡優尼山帝斯電子私人有限公司 filed Critical 新加坡商新加坡優尼山帝斯電子私人有限公司
Publication of TW202450432A publication Critical patent/TW202450432A/zh
Application granted granted Critical
Publication of TWI892578B publication Critical patent/TWI892578B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW113113400A 2023-04-11 2024-04-10 使用半導體元件的記憶裝置 TWI892578B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2023/014698 2023-04-11
PCT/JP2023/014698 WO2024214180A1 (ja) 2023-04-11 2023-04-11 半導体素子を用いたメモリ装置

Publications (2)

Publication Number Publication Date
TW202450432A TW202450432A (zh) 2024-12-16
TWI892578B true TWI892578B (zh) 2025-08-01

Family

ID=93016351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113113400A TWI892578B (zh) 2023-04-11 2024-04-10 使用半導體元件的記憶裝置

Country Status (5)

Country Link
US (1) US12588186B2 (https=)
JP (1) JPWO2024214180A1 (https=)
KR (1) KR20250162811A (https=)
TW (1) TWI892578B (https=)
WO (1) WO2024214180A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192249A1 (en) * 2004-09-20 2006-08-31 Samsung Electronics Co., Ltd. Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same
TW202310410A (zh) * 2021-08-30 2023-03-01 南韓商三星電子股份有限公司 半導體裝置
WO2023032193A1 (ja) * 2021-09-06 2023-03-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP3808763B2 (ja) 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
DE102006016550B4 (de) * 2005-04-09 2010-04-29 Samsung Electronics Co., Ltd., Suwon-si Feldeffekttransistoren mit vertikal ausgerichteten Gate-Elektroden und Verfahren zum Herstellen derselben
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays
KR102529073B1 (ko) * 2015-04-29 2023-05-08 제노 세미컨덕터, 인크. 백바이어스를 이용한 드레인 전류가 향상된 트랜지스터 및 메모리 셀
WO2023148799A1 (ja) * 2022-02-01 2023-08-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192249A1 (en) * 2004-09-20 2006-08-31 Samsung Electronics Co., Ltd. Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same
TW202310410A (zh) * 2021-08-30 2023-03-01 南韓商三星電子股份有限公司 半導體裝置
WO2023032193A1 (ja) * 2021-09-06 2023-03-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Also Published As

Publication number Publication date
JPWO2024214180A1 (https=) 2024-10-17
TW202450432A (zh) 2024-12-16
US20240349482A1 (en) 2024-10-17
KR20250162811A (ko) 2025-11-19
WO2024214180A1 (ja) 2024-10-17
US12588186B2 (en) 2026-03-24

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