KR20240170567A - 평면외 자기장에 민감한 자기저항 센서 - Google Patents

평면외 자기장에 민감한 자기저항 센서 Download PDF

Info

Publication number
KR20240170567A
KR20240170567A KR1020247036549A KR20247036549A KR20240170567A KR 20240170567 A KR20240170567 A KR 20240170567A KR 1020247036549 A KR1020247036549 A KR 1020247036549A KR 20247036549 A KR20247036549 A KR 20247036549A KR 20240170567 A KR20240170567 A KR 20240170567A
Authority
KR
South Korea
Prior art keywords
layer
magnetic field
plane
applied magnetic
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247036549A
Other languages
English (en)
Korean (ko)
Inventor
알바로 팔로미노
베르나르 디에니
리카르도 수사
이오안-루시안 프레즈베아누
Original Assignee
꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
쌩뜨레 나티오날 데 라 르세르쉬 생띠끄
유니버시티 그르노블 알페스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈, 쌩뜨레 나티오날 데 라 르세르쉬 생띠끄, 유니버시티 그르노블 알페스 filed Critical 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
Publication of KR20240170567A publication Critical patent/KR20240170567A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
KR1020247036549A 2022-04-05 2023-04-04 평면외 자기장에 민감한 자기저항 센서 Pending KR20240170567A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP22305459.4 2022-04-05
EP22305459.4A EP4257998A1 (en) 2022-04-05 2022-04-05 Magnetorestistive sensor sensitive to an out-of-plane magnetic field
PCT/EP2023/058767 WO2023194346A1 (en) 2022-04-05 2023-04-04 Magnetorestistive sensor sensitive to an out-of-plane magnetic field

Publications (1)

Publication Number Publication Date
KR20240170567A true KR20240170567A (ko) 2024-12-03

Family

ID=81308214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247036549A Pending KR20240170567A (ko) 2022-04-05 2023-04-04 평면외 자기장에 민감한 자기저항 센서

Country Status (6)

Country Link
US (1) US20250231259A1 (https=)
EP (2) EP4257998A1 (https=)
JP (1) JP2025512961A (https=)
KR (1) KR20240170567A (https=)
CN (1) CN119365785A (https=)
WO (1) WO2023194346A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250164585A1 (en) * 2023-11-16 2025-05-22 Allegro Microsystems, Llc Tmr sensor having tuned vortex response
US20250314720A1 (en) * 2024-04-05 2025-10-09 Allegro Microsystems, Llc Tmr sensor having vortex stack to enhance linearity
DE102024110511A1 (de) * 2024-04-15 2025-10-16 Infineon Technologies Ag Magnetoresistiver sensor
US20250372300A1 (en) * 2024-05-31 2025-12-04 Allegro Microsystems, Llc Perpendicular MR SAF
US20250383414A1 (en) * 2024-06-12 2025-12-18 Allegro Microsystems, Llc Tunnel magnetoresistance element and sensor having increased measurement range
US20260003017A1 (en) * 2024-06-26 2026-01-01 Allegro Microsystems, Llc Magnetoresistive element for sensing a magnetic field in an out-of-plane direction with increased sensitivity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010007695A1 (ja) * 2008-07-14 2010-01-21 富士電機ホールディングス株式会社 スピンバルブ素子及びその駆動方法並びにこれらを用いる記憶装置
DE102015121753B4 (de) * 2015-12-14 2021-10-21 Infineon Technologies Ag Magnetsensorbauelement und Verfahren für ein Magnetsensorbauelement mit einer magnetoresistiven Struktur
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
JP7136340B2 (ja) * 2019-04-09 2022-09-13 株式会社村田製作所 磁気抵抗素子および磁気センサ
EP4012431B1 (en) * 2020-12-11 2025-07-02 Allegro MicroSystems, LLC Magnetoresistive element for sensing a magnetic field in a z-axis

Also Published As

Publication number Publication date
EP4505200A1 (en) 2025-02-12
EP4257998A1 (en) 2023-10-11
JP2025512961A (ja) 2025-04-22
CN119365785A (zh) 2025-01-24
WO2023194346A1 (en) 2023-10-12
US20250231259A1 (en) 2025-07-17

Similar Documents

Publication Publication Date Title
KR20240170567A (ko) 평면외 자기장에 민감한 자기저항 센서
KR101981449B1 (ko) 스핀-토크 자기 저항 메모리 소자 및 그 제조 방법
KR100401777B1 (ko) 자기 저항 효과 소자 및 자기 메모리 장치
JP6530757B2 (ja) 磁界に対する応答が改善された磁気抵抗素子
JP4582488B2 (ja) 磁性薄膜及びそれを用いた磁気抵抗効果素子並びに磁気デバイス
US10718830B2 (en) Magnetoresistive sensor
US12265139B2 (en) Magneto-resistive element and magnetic sensor
US7372116B2 (en) Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US20050280960A1 (en) Magnetic random access memory array with coupled soft adjacent magnetic layer
JP2004186274A (ja) スピン注入素子及びスピン注入素子を用いた磁気装置
WO2009048568A1 (en) Mram with means of controlling magnetic anisotropy
KR20020008182A (ko) 데이터 저장 시스템 및 자기 특성 감지 시스템 및 자기시스템 및 자기 시스템 제조 방법 및 자기 시스템의 자기저항 특성 튜닝 방법
JP2005522044A (ja) 高密度ｍｒａｍ用途用の合成フェリ磁性体センス層
US11922986B2 (en) Magnetic heterojunction structure and method for controlling and achieving logic and multiple-state storage functions
JP3977576B2 (ja) 磁気メモリ装置
JPH11238924A (ja) スピン依存伝導素子とそれを用いた電子部品および磁気部品
Muehlenhoff et al. Spin-canting effects in GMR sensors with wide dynamic field range
JP3558951B2 (ja) 磁気メモリ素子及びそれを用いた磁気メモリ
JP3547974B2 (ja) 磁気素子とそれを用いた磁気ヘッドおよび磁気記憶装置
Inomata Giant magnetoresistance and its sensor applications
Chan et al. Spin valves with conetic based synthetic ferrimagnet free layer
JP2005286201A (ja) 磁気抵抗効果素子
Wang et al. Magnetostatic coupling in spin dependent tunnel junctions
Ranjbar et al. High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1 $ _0 $-PtMn Pinned Layer
JP2025503333A (ja) 高い面外感度を有する磁気抵抗素子

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000