CN119365785A - 对面外的磁场敏感的磁阻传感器 - Google Patents

对面外的磁场敏感的磁阻传感器 Download PDF

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Publication number
CN119365785A
CN119365785A CN202380044522.9A CN202380044522A CN119365785A CN 119365785 A CN119365785 A CN 119365785A CN 202380044522 A CN202380044522 A CN 202380044522A CN 119365785 A CN119365785 A CN 119365785A
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CN
China
Prior art keywords
layer
vortex
sensing
plane
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380044522.9A
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English (en)
Chinese (zh)
Inventor
阿尔瓦罗·帕洛米诺
伯纳德·迪埃尼
里卡多·索萨
伊奥恩-路西安·普雷杰贝阿努
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Grenoble Alpes, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Publication of CN119365785A publication Critical patent/CN119365785A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
CN202380044522.9A 2022-04-05 2023-04-04 对面外的磁场敏感的磁阻传感器 Pending CN119365785A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP22305459.4 2022-04-05
EP22305459.4A EP4257998A1 (en) 2022-04-05 2022-04-05 Magnetorestistive sensor sensitive to an out-of-plane magnetic field
PCT/EP2023/058767 WO2023194346A1 (en) 2022-04-05 2023-04-04 Magnetorestistive sensor sensitive to an out-of-plane magnetic field

Publications (1)

Publication Number Publication Date
CN119365785A true CN119365785A (zh) 2025-01-24

Family

ID=81308214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380044522.9A Pending CN119365785A (zh) 2022-04-05 2023-04-04 对面外的磁场敏感的磁阻传感器

Country Status (6)

Country Link
US (1) US20250231259A1 (https=)
EP (2) EP4257998A1 (https=)
JP (1) JP2025512961A (https=)
KR (1) KR20240170567A (https=)
CN (1) CN119365785A (https=)
WO (1) WO2023194346A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250164585A1 (en) * 2023-11-16 2025-05-22 Allegro Microsystems, Llc Tmr sensor having tuned vortex response
US20250314720A1 (en) * 2024-04-05 2025-10-09 Allegro Microsystems, Llc Tmr sensor having vortex stack to enhance linearity
DE102024110511A1 (de) * 2024-04-15 2025-10-16 Infineon Technologies Ag Magnetoresistiver sensor
US20250372300A1 (en) * 2024-05-31 2025-12-04 Allegro Microsystems, Llc Perpendicular MR SAF
US20250383414A1 (en) * 2024-06-12 2025-12-18 Allegro Microsystems, Llc Tunnel magnetoresistance element and sensor having increased measurement range
US20260003017A1 (en) * 2024-06-26 2026-01-01 Allegro Microsystems, Llc Magnetoresistive element for sensing a magnetic field in an out-of-plane direction with increased sensitivity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010007695A1 (ja) * 2008-07-14 2010-01-21 富士電機ホールディングス株式会社 スピンバルブ素子及びその駆動方法並びにこれらを用いる記憶装置
DE102015121753B4 (de) * 2015-12-14 2021-10-21 Infineon Technologies Ag Magnetsensorbauelement und Verfahren für ein Magnetsensorbauelement mit einer magnetoresistiven Struktur
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
JP7136340B2 (ja) * 2019-04-09 2022-09-13 株式会社村田製作所 磁気抵抗素子および磁気センサ
EP4012431B1 (en) * 2020-12-11 2025-07-02 Allegro MicroSystems, LLC Magnetoresistive element for sensing a magnetic field in a z-axis

Also Published As

Publication number Publication date
EP4505200A1 (en) 2025-02-12
EP4257998A1 (en) 2023-10-11
KR20240170567A (ko) 2024-12-03
JP2025512961A (ja) 2025-04-22
WO2023194346A1 (en) 2023-10-12
US20250231259A1 (en) 2025-07-17

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