KR20240110845A - 반도체 소자 - Google Patents
반도체 소자 Download PDFInfo
- Publication number
- KR20240110845A KR20240110845A KR1020247020507A KR20247020507A KR20240110845A KR 20240110845 A KR20240110845 A KR 20240110845A KR 1020247020507 A KR1020247020507 A KR 1020247020507A KR 20247020507 A KR20247020507 A KR 20247020507A KR 20240110845 A KR20240110845 A KR 20240110845A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor device
- semiconductor
- semiconductor layer
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H01L29/78684—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- H01L29/16—
-
- H01L29/66045—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Carbon And Carbon Compounds (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-193569 | 2021-11-29 | ||
| JP2021193569 | 2021-11-29 | ||
| PCT/JP2022/030645 WO2023095391A1 (ja) | 2021-11-29 | 2022-08-10 | 半導体素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240110845A true KR20240110845A (ko) | 2024-07-16 |
Family
ID=86539140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247020507A Pending KR20240110845A (ko) | 2021-11-29 | 2022-08-10 | 반도체 소자 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250024692A1 (https=) |
| EP (1) | EP4443520A4 (https=) |
| JP (1) | JP2023080040A (https=) |
| KR (1) | KR20240110845A (https=) |
| CN (1) | CN118355508A (https=) |
| TW (1) | TW202339286A (https=) |
| WO (1) | WO2023095391A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053607A (ja) | 2006-08-28 | 2008-03-06 | Osaka Univ | カーボンナノチューブ分散ポリマーを用いた電界効果トランジスタの製造方法 |
| JP2008071898A (ja) | 2006-09-13 | 2008-03-27 | Osaka Univ | カーボンナノチューブ電界効果トランジスタ及びその製造方法 |
| JP2011126727A (ja) * | 2009-12-16 | 2011-06-30 | Toray Ind Inc | カーボンナノチューブ複合体、カーボンナノチューブ複合体分散液、カーボンナノチューブ複合体分散膜および電界効果型トランジスタ |
| CN105810749B (zh) * | 2014-12-31 | 2018-12-21 | 清华大学 | N型薄膜晶体管 |
| US10177199B2 (en) * | 2016-05-03 | 2019-01-08 | Tsinghua University | Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit |
| JP6485593B2 (ja) * | 2017-03-27 | 2019-03-20 | 東レ株式会社 | 半導体素子、相補型半導体装置、半導体素子の製造方法、無線通信装置および商品タグ |
| WO2019064504A1 (ja) | 2017-09-29 | 2019-04-04 | 日本電気株式会社 | ナノカーボンインクおよびそれを用いた半導体デバイスの製造方法 |
| JP7014675B2 (ja) | 2018-05-23 | 2022-02-01 | 花王株式会社 | 半導体型単層カーボンナノチューブ分散液の製造方法 |
| JP6900453B2 (ja) | 2019-11-15 | 2021-07-07 | 花王株式会社 | 半導体型単層カーボンナノチューブ分散液の製造方法 |
| JP7002517B2 (ja) | 2019-11-15 | 2022-01-20 | 花王株式会社 | 半導体型単層カーボンナノチューブ分散液の製造方法 |
| JP2021080121A (ja) | 2019-11-15 | 2021-05-27 | 花王株式会社 | 半導体型単層カーボンナノチューブ分散液の製造方法 |
| JP7589569B2 (ja) * | 2020-02-17 | 2024-11-26 | 東レ株式会社 | 半導体装置およびその製造方法 |
-
2022
- 2022-08-10 WO PCT/JP2022/030645 patent/WO2023095391A1/ja not_active Ceased
- 2022-08-10 CN CN202280078920.8A patent/CN118355508A/zh active Pending
- 2022-08-10 EP EP22898176.7A patent/EP4443520A4/en active Pending
- 2022-08-10 US US18/714,026 patent/US20250024692A1/en active Pending
- 2022-08-10 KR KR1020247020507A patent/KR20240110845A/ko active Pending
- 2022-11-25 JP JP2022188692A patent/JP2023080040A/ja active Pending
- 2022-11-28 TW TW111145429A patent/TW202339286A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP4443520A1 (en) | 2024-10-09 |
| US20250024692A1 (en) | 2025-01-16 |
| JP2023080040A (ja) | 2023-06-08 |
| TW202339286A (zh) | 2023-10-01 |
| CN118355508A (zh) | 2024-07-16 |
| WO2023095391A1 (ja) | 2023-06-01 |
| EP4443520A4 (en) | 2025-12-10 |
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