CN118355508A - 半导体元件 - Google Patents

半导体元件 Download PDF

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Publication number
CN118355508A
CN118355508A CN202280078920.8A CN202280078920A CN118355508A CN 118355508 A CN118355508 A CN 118355508A CN 202280078920 A CN202280078920 A CN 202280078920A CN 118355508 A CN118355508 A CN 118355508A
Authority
CN
China
Prior art keywords
layer
semiconductor
semiconductor layer
semiconductor element
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280078920.8A
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English (en)
Chinese (zh)
Inventor
浅井光夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN118355508A publication Critical patent/CN118355508A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202280078920.8A 2021-11-29 2022-08-10 半导体元件 Pending CN118355508A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021193569 2021-11-29
JP2021-193569 2021-11-29
PCT/JP2022/030645 WO2023095391A1 (ja) 2021-11-29 2022-08-10 半導体素子

Publications (1)

Publication Number Publication Date
CN118355508A true CN118355508A (zh) 2024-07-16

Family

ID=86539140

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280078920.8A Pending CN118355508A (zh) 2021-11-29 2022-08-10 半导体元件

Country Status (7)

Country Link
US (1) US20250024692A1 (https=)
EP (1) EP4443520A4 (https=)
JP (1) JP2023080040A (https=)
KR (1) KR20240110845A (https=)
CN (1) CN118355508A (https=)
TW (1) TW202339286A (https=)
WO (1) WO2023095391A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053607A (ja) 2006-08-28 2008-03-06 Osaka Univ カーボンナノチューブ分散ポリマーを用いた電界効果トランジスタの製造方法
JP2008071898A (ja) 2006-09-13 2008-03-27 Osaka Univ カーボンナノチューブ電界効果トランジスタ及びその製造方法
JP2011126727A (ja) * 2009-12-16 2011-06-30 Toray Ind Inc カーボンナノチューブ複合体、カーボンナノチューブ複合体分散液、カーボンナノチューブ複合体分散膜および電界効果型トランジスタ
CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
US10177199B2 (en) * 2016-05-03 2019-01-08 Tsinghua University Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
JP6485593B2 (ja) * 2017-03-27 2019-03-20 東レ株式会社 半導体素子、相補型半導体装置、半導体素子の製造方法、無線通信装置および商品タグ
WO2019064504A1 (ja) 2017-09-29 2019-04-04 日本電気株式会社 ナノカーボンインクおよびそれを用いた半導体デバイスの製造方法
JP7014675B2 (ja) 2018-05-23 2022-02-01 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP6900453B2 (ja) 2019-11-15 2021-07-07 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7002517B2 (ja) 2019-11-15 2022-01-20 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP2021080121A (ja) 2019-11-15 2021-05-27 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7589569B2 (ja) * 2020-02-17 2024-11-26 東レ株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP4443520A1 (en) 2024-10-09
US20250024692A1 (en) 2025-01-16
KR20240110845A (ko) 2024-07-16
JP2023080040A (ja) 2023-06-08
TW202339286A (zh) 2023-10-01
WO2023095391A1 (ja) 2023-06-01
EP4443520A4 (en) 2025-12-10

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