JP2023080040A - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP2023080040A
JP2023080040A JP2022188692A JP2022188692A JP2023080040A JP 2023080040 A JP2023080040 A JP 2023080040A JP 2022188692 A JP2022188692 A JP 2022188692A JP 2022188692 A JP2022188692 A JP 2022188692A JP 2023080040 A JP2023080040 A JP 2023080040A
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Japan
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semiconductor device
semiconductor layer
semiconductor
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Pending
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JP2022188692A
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English (en)
Japanese (ja)
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JP2023080040A5 (https=
Inventor
光夫 浅井
Mitsuo Asai
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Kao Corp
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Kao Corp
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Publication of JP2023080040A publication Critical patent/JP2023080040A/ja
Publication of JP2023080040A5 publication Critical patent/JP2023080040A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022188692A 2021-11-29 2022-11-25 半導体素子 Pending JP2023080040A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021193569 2021-11-29
JP2021193569 2021-11-29

Publications (2)

Publication Number Publication Date
JP2023080040A true JP2023080040A (ja) 2023-06-08
JP2023080040A5 JP2023080040A5 (https=) 2025-09-17

Family

ID=86539140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022188692A Pending JP2023080040A (ja) 2021-11-29 2022-11-25 半導体素子

Country Status (7)

Country Link
US (1) US20250024692A1 (https=)
EP (1) EP4443520A4 (https=)
JP (1) JP2023080040A (https=)
KR (1) KR20240110845A (https=)
CN (1) CN118355508A (https=)
TW (1) TW202339286A (https=)
WO (1) WO2023095391A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053607A (ja) 2006-08-28 2008-03-06 Osaka Univ カーボンナノチューブ分散ポリマーを用いた電界効果トランジスタの製造方法
JP2008071898A (ja) 2006-09-13 2008-03-27 Osaka Univ カーボンナノチューブ電界効果トランジスタ及びその製造方法
JP2011126727A (ja) * 2009-12-16 2011-06-30 Toray Ind Inc カーボンナノチューブ複合体、カーボンナノチューブ複合体分散液、カーボンナノチューブ複合体分散膜および電界効果型トランジスタ
CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
US10177199B2 (en) * 2016-05-03 2019-01-08 Tsinghua University Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
JP6485593B2 (ja) * 2017-03-27 2019-03-20 東レ株式会社 半導体素子、相補型半導体装置、半導体素子の製造方法、無線通信装置および商品タグ
WO2019064504A1 (ja) 2017-09-29 2019-04-04 日本電気株式会社 ナノカーボンインクおよびそれを用いた半導体デバイスの製造方法
JP7014675B2 (ja) 2018-05-23 2022-02-01 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP6900453B2 (ja) 2019-11-15 2021-07-07 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7002517B2 (ja) 2019-11-15 2022-01-20 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP2021080121A (ja) 2019-11-15 2021-05-27 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7589569B2 (ja) * 2020-02-17 2024-11-26 東レ株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP4443520A1 (en) 2024-10-09
US20250024692A1 (en) 2025-01-16
KR20240110845A (ko) 2024-07-16
TW202339286A (zh) 2023-10-01
CN118355508A (zh) 2024-07-16
WO2023095391A1 (ja) 2023-06-01
EP4443520A4 (en) 2025-12-10

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