TW202339286A - 半導體元件 - Google Patents

半導體元件 Download PDF

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Publication number
TW202339286A
TW202339286A TW111145429A TW111145429A TW202339286A TW 202339286 A TW202339286 A TW 202339286A TW 111145429 A TW111145429 A TW 111145429A TW 111145429 A TW111145429 A TW 111145429A TW 202339286 A TW202339286 A TW 202339286A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor
semiconductor layer
semiconductor device
carbon nanotubes
Prior art date
Application number
TW111145429A
Other languages
English (en)
Chinese (zh)
Inventor
浅井光夫
Original Assignee
日商花王股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商花王股份有限公司 filed Critical 日商花王股份有限公司
Publication of TW202339286A publication Critical patent/TW202339286A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW111145429A 2021-11-29 2022-11-28 半導體元件 TW202339286A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021193569 2021-11-29
JP2021-193569 2021-11-29
PCT/JP2022/030645 WO2023095391A1 (ja) 2021-11-29 2022-08-10 半導体素子
WOPCT/JP2022/030645 2022-08-10

Publications (1)

Publication Number Publication Date
TW202339286A true TW202339286A (zh) 2023-10-01

Family

ID=86539140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111145429A TW202339286A (zh) 2021-11-29 2022-11-28 半導體元件

Country Status (7)

Country Link
US (1) US20250024692A1 (https=)
EP (1) EP4443520A4 (https=)
JP (1) JP2023080040A (https=)
KR (1) KR20240110845A (https=)
CN (1) CN118355508A (https=)
TW (1) TW202339286A (https=)
WO (1) WO2023095391A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053607A (ja) 2006-08-28 2008-03-06 Osaka Univ カーボンナノチューブ分散ポリマーを用いた電界効果トランジスタの製造方法
JP2008071898A (ja) 2006-09-13 2008-03-27 Osaka Univ カーボンナノチューブ電界効果トランジスタ及びその製造方法
JP2011126727A (ja) * 2009-12-16 2011-06-30 Toray Ind Inc カーボンナノチューブ複合体、カーボンナノチューブ複合体分散液、カーボンナノチューブ複合体分散膜および電界効果型トランジスタ
CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
US10177199B2 (en) * 2016-05-03 2019-01-08 Tsinghua University Method for making three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
JP6485593B2 (ja) * 2017-03-27 2019-03-20 東レ株式会社 半導体素子、相補型半導体装置、半導体素子の製造方法、無線通信装置および商品タグ
WO2019064504A1 (ja) 2017-09-29 2019-04-04 日本電気株式会社 ナノカーボンインクおよびそれを用いた半導体デバイスの製造方法
JP7014675B2 (ja) 2018-05-23 2022-02-01 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP6900453B2 (ja) 2019-11-15 2021-07-07 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7002517B2 (ja) 2019-11-15 2022-01-20 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP2021080121A (ja) 2019-11-15 2021-05-27 花王株式会社 半導体型単層カーボンナノチューブ分散液の製造方法
JP7589569B2 (ja) * 2020-02-17 2024-11-26 東レ株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP4443520A1 (en) 2024-10-09
US20250024692A1 (en) 2025-01-16
KR20240110845A (ko) 2024-07-16
JP2023080040A (ja) 2023-06-08
CN118355508A (zh) 2024-07-16
WO2023095391A1 (ja) 2023-06-01
EP4443520A4 (en) 2025-12-10

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