KR20240056584A - 레지스트 하층막 형성 조성물 - Google Patents

레지스트 하층막 형성 조성물 Download PDF

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Publication number
KR20240056584A
KR20240056584A KR1020247011587A KR20247011587A KR20240056584A KR 20240056584 A KR20240056584 A KR 20240056584A KR 1020247011587 A KR1020247011587 A KR 1020247011587A KR 20247011587 A KR20247011587 A KR 20247011587A KR 20240056584 A KR20240056584 A KR 20240056584A
Authority
KR
South Korea
Prior art keywords
underlayer film
resist underlayer
resist
formula
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247011587A
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English (en)
Korean (ko)
Inventor
쇼우 시미즈
사토시 타케다
코다이 카토
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20240056584A publication Critical patent/KR20240056584A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/0271—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020247011587A 2021-09-13 2022-08-31 레지스트 하층막 형성 조성물 Pending KR20240056584A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-148885 2021-09-13
JP2021148885 2021-09-13
PCT/JP2022/032852 WO2023037949A1 (ja) 2021-09-13 2022-08-31 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
KR20240056584A true KR20240056584A (ko) 2024-04-30

Family

ID=85506686

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247011587A Pending KR20240056584A (ko) 2021-09-13 2022-08-31 레지스트 하층막 형성 조성물

Country Status (6)

Country Link
US (1) US20240377748A1 (https=)
JP (1) JPWO2023037949A1 (https=)
KR (1) KR20240056584A (https=)
CN (1) CN118215887A (https=)
TW (1) TW202328817A (https=)
WO (1) WO2023037949A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022075339A1 (https=) * 2020-10-07 2022-04-14
KR20240101079A (ko) * 2022-12-23 2024-07-02 삼성전자주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526270A (ja) 2002-02-11 2005-09-02 ブルーワー サイエンス アイ エヌ シー． ハロゲン化反射防止膜
KR20060003850A (ko) 2005-12-27 2006-01-11 한국유지관리 주식회사 미세조정이 가능한 어댑터 타입의 광섬유격자 센서용고정구
KR20200111068A (ko) 2019-03-18 2020-09-28 한국세라믹기술원 내플라즈마 세라믹의 가속수명 시험방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1977220B (zh) * 2004-07-02 2010-12-01 日产化学工业株式会社 含有具有卤原子的萘环的形成光刻用下层膜的组合物
KR20190028651A (ko) * 2016-07-15 2019-03-19 닛산 가가쿠 가부시키가이샤 히단토인환을 갖는 화합물을 포함하는 레지스트 하층막형성 조성물
JPWO2020111068A1 (ja) * 2018-11-29 2021-10-28 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526270A (ja) 2002-02-11 2005-09-02 ブルーワー サイエンス アイ エヌ シー． ハロゲン化反射防止膜
KR20060003850A (ko) 2005-12-27 2006-01-11 한국유지관리 주식회사 미세조정이 가능한 어댑터 타입의 광섬유격자 센서용고정구
KR20200111068A (ko) 2019-03-18 2020-09-28 한국세라믹기술원 내플라즈마 세라믹의 가속수명 시험방법

Also Published As

Publication number Publication date
US20240377748A1 (en) 2024-11-14
WO2023037949A1 (ja) 2023-03-16
TW202328817A (zh) 2023-07-16
JPWO2023037949A1 (https=) 2023-03-16
CN118215887A (zh) 2024-06-18

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