JPWO2023037949A1 - - Google Patents

Info

Publication number
JPWO2023037949A1
JPWO2023037949A1 JP2023546908A JP2023546908A JPWO2023037949A1 JP WO2023037949 A1 JPWO2023037949 A1 JP WO2023037949A1 JP 2023546908 A JP2023546908 A JP 2023546908A JP 2023546908 A JP2023546908 A JP 2023546908A JP WO2023037949 A1 JPWO2023037949 A1 JP WO2023037949A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023546908A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023037949A1 publication Critical patent/JPWO2023037949A1/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2023546908A 2021-09-13 2022-08-31 Pending JPWO2023037949A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021148885 2021-09-13
PCT/JP2022/032852 WO2023037949A1 (ja) 2021-09-13 2022-08-31 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
JPWO2023037949A1 true JPWO2023037949A1 (https=) 2023-03-16

Family

ID=85506686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023546908A Pending JPWO2023037949A1 (https=) 2021-09-13 2022-08-31

Country Status (6)

Country Link
US (1) US20240377748A1 (https=)
JP (1) JPWO2023037949A1 (https=)
KR (1) KR20240056584A (https=)
CN (1) CN118215887A (https=)
TW (1) TW202328817A (https=)
WO (1) WO2023037949A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022075339A1 (https=) * 2020-10-07 2022-04-14
KR20240101079A (ko) * 2022-12-23 2024-07-02 삼성전자주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526270A (ja) * 2002-02-11 2005-09-02 ブルーワー サイエンス アイ エヌ シー. ハロゲン化反射防止膜
WO2006003850A1 (ja) * 2004-07-02 2006-01-12 Nissan Chemical Industries, Ltd. ハロゲン原子を有するナフタレン環を含むリソグラフィー用下層膜形成組成物
WO2018012253A1 (ja) * 2016-07-15 2018-01-18 日産化学工業株式会社 ヒダントイン環を有する化合物を含むレジスト下層膜形成組成物
WO2020111068A1 (ja) * 2018-11-29 2020-06-04 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060003850A (ko) 2005-12-27 2006-01-11 한국유지관리 주식회사 미세조정이 가능한 어댑터 타입의 광섬유격자 센서용고정구
KR102194951B1 (ko) 2019-03-18 2020-12-24 한국세라믹기술원 내플라즈마 세라믹의 가속수명 시험방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526270A (ja) * 2002-02-11 2005-09-02 ブルーワー サイエンス アイ エヌ シー. ハロゲン化反射防止膜
WO2006003850A1 (ja) * 2004-07-02 2006-01-12 Nissan Chemical Industries, Ltd. ハロゲン原子を有するナフタレン環を含むリソグラフィー用下層膜形成組成物
WO2018012253A1 (ja) * 2016-07-15 2018-01-18 日産化学工業株式会社 ヒダントイン環を有する化合物を含むレジスト下層膜形成組成物
WO2020111068A1 (ja) * 2018-11-29 2020-06-04 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法

Also Published As

Publication number Publication date
US20240377748A1 (en) 2024-11-14
WO2023037949A1 (ja) 2023-03-16
KR20240056584A (ko) 2024-04-30
TW202328817A (zh) 2023-07-16
CN118215887A (zh) 2024-06-18

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