KR20240032082A - 패턴 형성 방법 및 플라즈마 처리 방법 - Google Patents
패턴 형성 방법 및 플라즈마 처리 방법 Download PDFInfo
- Publication number
- KR20240032082A KR20240032082A KR1020247004072A KR20247004072A KR20240032082A KR 20240032082 A KR20240032082 A KR 20240032082A KR 1020247004072 A KR1020247004072 A KR 1020247004072A KR 20247004072 A KR20247004072 A KR 20247004072A KR 20240032082 A KR20240032082 A KR 20240032082A
- Authority
- KR
- South Korea
- Prior art keywords
- tryptycene
- side chain
- derivative
- pattern
- skeleton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
-
- H01L21/02118—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/21—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H01L21/31138—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/90—Ring systems containing bridged rings containing more than four rings
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-114353 | 2021-07-09 | ||
| JP2021114353 | 2021-07-09 | ||
| PCT/JP2022/025607 WO2023282114A1 (ja) | 2021-07-09 | 2022-06-27 | パターン形成方法、及びプラズマ処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240032082A true KR20240032082A (ko) | 2024-03-08 |
Family
ID=84801547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247004072A Pending KR20240032082A (ko) | 2021-07-09 | 2022-06-27 | 패턴 형성 방법 및 플라즈마 처리 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240318014A1 (https=) |
| EP (1) | EP4369381A4 (https=) |
| JP (1) | JPWO2023282114A1 (https=) |
| KR (1) | KR20240032082A (https=) |
| CN (1) | CN117597768A (https=) |
| WO (1) | WO2023282114A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2023210378A1 (https=) * | 2022-04-28 | 2023-11-02 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014126623A (ja) | 2012-12-26 | 2014-07-07 | Shin Etsu Chem Co Ltd | レジスト材料、これを用いたパターン形成方法及び高分子化合物 |
| JP2014241374A (ja) | 2013-06-12 | 2014-12-25 | 株式会社東芝 | パターン形成方法 |
| JP2017505709A (ja) | 2014-01-16 | 2017-02-23 | ブルーワー サイエンス アイ エヌ シー. | 誘導自己組織化用高χブロックコポリマー |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008308433A (ja) * | 2007-06-14 | 2008-12-25 | Idemitsu Kosan Co Ltd | トリプチセン構造を有する化合物、フォトレジスト基材及びフォトレジスト組成物 |
| US9085457B2 (en) * | 2011-03-11 | 2015-07-21 | Qualcomm Mems Technologies, Inc. | Treatment of a self-assembled monolayer on a dielectric layer for improved epoxy adhesion |
| JP6037326B2 (ja) * | 2012-09-04 | 2016-12-07 | 国立大学法人東京工業大学 | 新規ポリシロキサン化合物並びにそれを利用した薄膜および微細構造体の製造方法 |
| JP6219314B2 (ja) * | 2013-01-16 | 2017-10-25 | 国立研究開発法人科学技術振興機構 | 自己組織化膜形成材料として有用なトリプチセン誘導体、その製造方法、それを用いた膜、及びその製造方法 |
| CN104956490B (zh) | 2013-02-12 | 2018-05-18 | 国立研究开发法人科学技术振兴机构 | 使用有机薄膜的电子设备以及含有它而形成的电子器械 |
| JP6793946B2 (ja) | 2014-07-15 | 2020-12-02 | 国立研究開発法人科学技術振興機構 | 自己組織化膜形成材料として有用なトリプチセン誘導体、その製造方法、それを用いた膜、当該膜の製造方法、及びそれを用いた電子デバイス |
| US20210018952A1 (en) | 2017-06-02 | 2021-01-21 | Ultramemory Inc. | Semiconductor module |
| WO2021060042A1 (ja) * | 2019-09-25 | 2021-04-01 | 富士フイルム株式会社 | 化合物、組成物、膜、構造体及び電子デバイス |
| CN113200858B (zh) * | 2020-01-16 | 2022-05-17 | 中国科学院理化技术研究所 | 基于三蝶烯衍生物单分子树脂的合成、正性光刻胶及其在光刻中的应用 |
| US11245024B2 (en) * | 2020-04-09 | 2022-02-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
2022
- 2022-06-27 WO PCT/JP2022/025607 patent/WO2023282114A1/ja not_active Ceased
- 2022-06-27 KR KR1020247004072A patent/KR20240032082A/ko active Pending
- 2022-06-27 CN CN202280047481.4A patent/CN117597768A/zh active Pending
- 2022-06-27 JP JP2023533544A patent/JPWO2023282114A1/ja active Pending
- 2022-06-27 US US18/574,204 patent/US20240318014A1/en active Pending
- 2022-06-27 EP EP22837530.9A patent/EP4369381A4/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014126623A (ja) | 2012-12-26 | 2014-07-07 | Shin Etsu Chem Co Ltd | レジスト材料、これを用いたパターン形成方法及び高分子化合物 |
| JP2014241374A (ja) | 2013-06-12 | 2014-12-25 | 株式会社東芝 | パターン形成方法 |
| JP2017505709A (ja) | 2014-01-16 | 2017-02-23 | ブルーワー サイエンス アイ エヌ シー. | 誘導自己組織化用高χブロックコポリマー |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023282114A1 (ja) | 2023-01-12 |
| EP4369381A1 (en) | 2024-05-15 |
| EP4369381A4 (en) | 2025-06-25 |
| JPWO2023282114A1 (https=) | 2023-01-12 |
| TW202317668A (zh) | 2023-05-01 |
| CN117597768A (zh) | 2024-02-23 |
| US20240318014A1 (en) | 2024-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| A201 | Request for examination | ||
| D13 | Search requested |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |