JP2014241374A - パターン形成方法 - Google Patents
パターン形成方法 Download PDFInfo
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- JP2014241374A JP2014241374A JP2013123840A JP2013123840A JP2014241374A JP 2014241374 A JP2014241374 A JP 2014241374A JP 2013123840 A JP2013123840 A JP 2013123840A JP 2013123840 A JP2013123840 A JP 2013123840A JP 2014241374 A JP2014241374 A JP 2014241374A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Health & Medical Sciences (AREA)
- Oral & Maxillofacial Surgery (AREA)
- Thermal Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
102 SOC膜
104 SOG膜
106 レジスト膜
108、110、116 ホールパターン
112 ブロックコポリマー
114 自己組織化パターン
Claims (6)
- 被加工膜上に凹凸パターンを有するガイドを形成し、
前記ガイドの凹部に、第1セグメント及び第2セグメントを有するポリマー材料を埋め込み、
前記ポリマー材料をミクロ相分離させ、前記第1セグメントを含むシリンダー形状の第1ポリマー部、及び前記第2セグメントを含み前記第1ポリマー部の側部を囲む第2ポリマー部を有する自己組織化パターンを形成し、
前記第1ポリマー部を選択的に除去するパターン形成方法であって、
前記ポリマー材料における前記第1セグメントの分子量と前記第2セグメントの分子量が下記の式を満たし、
各第1ポリマー部の上部は連結し、下部は前記第2ポリマー部により離間され、
前記第1ポリマー部を選択的に除去することでホールパターンを形成することを特徴とするパターン形成方法。
- 凹凸パターンを有するガイドの凹部に、第1セグメント及び第2セグメントを有するポリマー材料を埋め込み、
前記ポリマー材料をミクロ相分離させ、前記第1セグメントを含むシリンダー形状の第1ポリマー部、及び前記第2セグメントを含み前記第1ポリマー部の側部を囲む第2ポリマー部を有する自己組織化パターンを形成し、
前記第1ポリマー部を選択的に除去するパターン形成方法であって、
前記ポリマー材料における前記第1セグメントの分子量と前記第2セグメントの分子量が下記の式を満たすことを特徴とするパターン形成方法。
- 前記ポリマー材料における前記第1セグメントの分子量と前記第2セグメントの分子量が下記の式を満たすことを特徴とする請求項2に記載のパターン形成方法。
- 前記自己組織化パターンは、前記第1ポリマー部を複数有し、
各第1ポリマー部の上部は連結し、下部は前記第2ポリマー部により離間されていることを特徴とする請求項2又は3に記載のパターン形成方法。 - 前記ガイドは被加工膜上に形成され、
前記第1ポリマー部を選択的に除去することでホールパターンを形成することを特徴とする請求項2乃至4のいずれかに記載のパターン形成方法。 - 前記第1ポリマー部の下方に前記第2ポリマー部は形成されないことを特徴とする請求項2乃至5のいずれかに記載のパターン形成方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013123840A JP6059608B2 (ja) | 2013-06-12 | 2013-06-12 | パターン形成方法 |
US14/181,303 US9514938B2 (en) | 2013-06-12 | 2014-02-14 | Method of forming pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013123840A JP6059608B2 (ja) | 2013-06-12 | 2013-06-12 | パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2014241374A true JP2014241374A (ja) | 2014-12-25 |
JP6059608B2 JP6059608B2 (ja) | 2017-01-11 |
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JP2013123840A Expired - Fee Related JP6059608B2 (ja) | 2013-06-12 | 2013-06-12 | パターン形成方法 |
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US (1) | US9514938B2 (ja) |
JP (1) | JP6059608B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023282114A1 (ja) | 2021-07-09 | 2023-01-12 | 東京エレクトロン株式会社 | パターン形成方法、及びプラズマ処理方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6023010B2 (ja) * | 2013-06-26 | 2016-11-09 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208255A (ja) * | 2006-02-02 | 2007-08-16 | Internatl Business Mach Corp <Ibm> | ブロック・コポリマーの改良型自己組織化パターン形成方法 |
WO2009049963A1 (en) * | 2007-10-15 | 2009-04-23 | International Business Machines Corporation | Semiconductor structures having improved contact resistance |
WO2010133422A2 (en) * | 2009-05-19 | 2010-11-25 | International Business Machines Corporation | Directed self-assembly of block copolymers using segmented prepatterns |
JP2010269304A (ja) * | 2009-05-22 | 2010-12-02 | Internatl Business Mach Corp <Ibm> | ポリマの指向性自己組織化を利用するサブリソグラフィ構造の形成方法 |
JP2013187408A (ja) * | 2012-03-08 | 2013-09-19 | Tokyo Ohka Kogyo Co Ltd | ブロックコポリマー含有組成物及びパターンの縮小方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7767099B2 (en) * | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
KR20090083091A (ko) | 2008-01-29 | 2009-08-03 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
JP5281386B2 (ja) | 2008-12-22 | 2013-09-04 | 株式会社日立製作所 | 高分子薄膜及びパターン媒体並びにこれらの製造方法 |
JP2012004434A (ja) | 2010-06-18 | 2012-01-05 | Toshiba Corp | パターン形成方法およびパターン形成装置 |
JP5171909B2 (ja) | 2010-09-16 | 2013-03-27 | 株式会社東芝 | 微細パターンの形成方法 |
JP5284328B2 (ja) | 2010-09-17 | 2013-09-11 | 株式会社東芝 | パターン形成方法およびインプリント用モールドの製造方法 |
-
2013
- 2013-06-12 JP JP2013123840A patent/JP6059608B2/ja not_active Expired - Fee Related
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2014
- 2014-02-14 US US14/181,303 patent/US9514938B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208255A (ja) * | 2006-02-02 | 2007-08-16 | Internatl Business Mach Corp <Ibm> | ブロック・コポリマーの改良型自己組織化パターン形成方法 |
WO2009049963A1 (en) * | 2007-10-15 | 2009-04-23 | International Business Machines Corporation | Semiconductor structures having improved contact resistance |
WO2010133422A2 (en) * | 2009-05-19 | 2010-11-25 | International Business Machines Corporation | Directed self-assembly of block copolymers using segmented prepatterns |
JP2010269304A (ja) * | 2009-05-22 | 2010-12-02 | Internatl Business Mach Corp <Ibm> | ポリマの指向性自己組織化を利用するサブリソグラフィ構造の形成方法 |
JP2013187408A (ja) * | 2012-03-08 | 2013-09-19 | Tokyo Ohka Kogyo Co Ltd | ブロックコポリマー含有組成物及びパターンの縮小方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023282114A1 (ja) | 2021-07-09 | 2023-01-12 | 東京エレクトロン株式会社 | パターン形成方法、及びプラズマ処理方法 |
KR20240032082A (ko) | 2021-07-09 | 2024-03-08 | 도쿄엘렉트론가부시키가이샤 | 패턴 형성 방법 및 플라즈마 처리 방법 |
Also Published As
Publication number | Publication date |
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JP6059608B2 (ja) | 2017-01-11 |
US9514938B2 (en) | 2016-12-06 |
US20140370195A1 (en) | 2014-12-18 |
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