CN117597768A - 图案形成方法和等离子体处理方法 - Google Patents

图案形成方法和等离子体处理方法 Download PDF

Info

Publication number
CN117597768A
CN117597768A CN202280047481.4A CN202280047481A CN117597768A CN 117597768 A CN117597768 A CN 117597768A CN 202280047481 A CN202280047481 A CN 202280047481A CN 117597768 A CN117597768 A CN 117597768A
Authority
CN
China
Prior art keywords
side chain
triptycene
pattern
aggregate
chain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280047481.4A
Other languages
English (en)
Chinese (zh)
Inventor
大和田伸
山口达也
浅子龙一
福岛孝典
庄子良晃
梶谷孝
荻原响
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Institute of Technology NUC
Original Assignee
Tokyo Electron Ltd
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Institute of Technology NUC filed Critical Tokyo Electron Ltd
Publication of CN117597768A publication Critical patent/CN117597768A/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/60Additives non-macromolecular
    • C09D7/63Additives non-macromolecular organic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00Ethers; Compounds having groups, groups or groups
    • C07C43/02Ethers
    • C07C43/20Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/21Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing rings other than six-membered aromatic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/18Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804Compounds having Si-O-C linkages
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6334Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/73Etching of wafers, substrates or parts of devices using masks for insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/90Ring systems containing bridged rings containing more than four rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN202280047481.4A 2021-07-09 2022-06-27 图案形成方法和等离子体处理方法 Pending CN117597768A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-114353 2021-07-09
JP2021114353 2021-07-09
PCT/JP2022/025607 WO2023282114A1 (ja) 2021-07-09 2022-06-27 パターン形成方法、及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
CN117597768A true CN117597768A (zh) 2024-02-23

Family

ID=84801547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280047481.4A Pending CN117597768A (zh) 2021-07-09 2022-06-27 图案形成方法和等离子体处理方法

Country Status (6)

Country Link
US (1) US20240318014A1 (https=)
EP (1) EP4369381A4 (https=)
JP (1) JPWO2023282114A1 (https=)
KR (1) KR20240032082A (https=)
CN (1) CN117597768A (https=)
WO (1) WO2023282114A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023210378A1 (https=) * 2022-04-28 2023-11-02

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008308433A (ja) * 2007-06-14 2008-12-25 Idemitsu Kosan Co Ltd トリプチセン構造を有する化合物、フォトレジスト基材及びフォトレジスト組成物
US9085457B2 (en) * 2011-03-11 2015-07-21 Qualcomm Mems Technologies, Inc. Treatment of a self-assembled monolayer on a dielectric layer for improved epoxy adhesion
JP6037326B2 (ja) * 2012-09-04 2016-12-07 国立大学法人東京工業大学 新規ポリシロキサン化合物並びにそれを利用した薄膜および微細構造体の製造方法
JP5825252B2 (ja) 2012-12-26 2015-12-02 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6219314B2 (ja) * 2013-01-16 2017-10-25 国立研究開発法人科学技術振興機構 自己組織化膜形成材料として有用なトリプチセン誘導体、その製造方法、それを用いた膜、及びその製造方法
CN104956490B (zh) 2013-02-12 2018-05-18 国立研究开发法人科学技术振兴机构 使用有机薄膜的电子设备以及含有它而形成的电子器械
JP6059608B2 (ja) 2013-06-12 2017-01-11 株式会社東芝 パターン形成方法
CN106104754B (zh) 2014-01-16 2020-07-28 布鲁尔科技公司 用于直接自组装的高chi嵌段共聚物
JP6793946B2 (ja) 2014-07-15 2020-12-02 国立研究開発法人科学技術振興機構 自己組織化膜形成材料として有用なトリプチセン誘導体、その製造方法、それを用いた膜、当該膜の製造方法、及びそれを用いた電子デバイス
US20210018952A1 (en) 2017-06-02 2021-01-21 Ultramemory Inc. Semiconductor module
WO2021060042A1 (ja) * 2019-09-25 2021-04-01 富士フイルム株式会社 化合物、組成物、膜、構造体及び電子デバイス
CN113200858B (zh) * 2020-01-16 2022-05-17 中国科学院理化技术研究所 基于三蝶烯衍生物单分子树脂的合成、正性光刻胶及其在光刻中的应用
US11245024B2 (en) * 2020-04-09 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2023282114A1 (ja) 2023-01-12
EP4369381A1 (en) 2024-05-15
KR20240032082A (ko) 2024-03-08
EP4369381A4 (en) 2025-06-25
JPWO2023282114A1 (https=) 2023-01-12
TW202317668A (zh) 2023-05-01
US20240318014A1 (en) 2024-09-26

Similar Documents

Publication Publication Date Title
KR100466818B1 (ko) 반도체 소자의 절연막 형성 방법
US8399349B2 (en) Materials and methods of forming controlled void
CN100530564C (zh) 密封多孔低k介电材料的方法
TWI764002B (zh) 形成非晶碳膜及蝕刻基板之方法
CN102686773A (zh) 成膜方法和成膜装置
JPH11251308A (ja) 低誘電率フッ素化アモルファス炭素誘電体およびその形成方法
CN116348989A (zh) 沉积低k介电膜的系统及方法
CN109585417A (zh) 半导体装置
CN117597768A (zh) 图案形成方法和等离子体处理方法
US20150140833A1 (en) Method of depositing a low-temperature, no-damage hdp sic-like film with high wet etch resistance
TWI913485B (zh) 圖案形成方法、及電漿處理方法
TW417172B (en) Method for forming film and manufacture of semiconductor device
US20220044927A1 (en) Deposition of low-stress boron-containing layers
JP4641933B2 (ja) 薄膜形成方法
JP4117768B2 (ja) 半導体基板上のシロキサン重合体膜及びその製造方法
JP6431962B2 (ja) 単層膜が媒介する高精度の膜堆積
JP2023545036A (ja) Uv硬化低誘電率誘電体膜を形成するためのシステム及び方法
JP2005183729A (ja) 有機薄膜の形成方法
WO2026006049A1 (en) Fast carbon plugfill for patterns with large critical dimensions
CN120824259B (zh) 形成用于低介电常数材料层的缓冲层的方法及互连结构
JPH09312334A (ja) 層間絶縁膜の形成方法
JP2001230244A (ja) 絶縁膜の形成方法および多層配線
JP2023044517A (ja) プラズマエッチング方法及びプラズマエッチング装置
TW202313458A (zh) 使用聯胺配位基前驅物沉積氮化硼薄膜
JPH05262819A (ja) 機能性有機高分子材料およびその製法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination