KR20240024994A - 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 - Google Patents

연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 Download PDF

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Publication number
KR20240024994A
KR20240024994A KR1020247002677A KR20247002677A KR20240024994A KR 20240024994 A KR20240024994 A KR 20240024994A KR 1020247002677 A KR1020247002677 A KR 1020247002677A KR 20247002677 A KR20247002677 A KR 20247002677A KR 20240024994 A KR20240024994 A KR 20240024994A
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KR
South Korea
Prior art keywords
mass
less
parts
polishing
polishing liquid
Prior art date
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Pending
Application number
KR1020247002677A
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English (en)
Korean (ko)
Inventor
쇼고 아라타
마사히로 사카시타
야스히로 이치게
요스케 호시
Original Assignee
가부시끼가이샤 레조낙
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Filing date
Publication date
Priority claimed from PCT/JP2021/031894 external-priority patent/WO2023032028A1/ja
Priority claimed from PCT/JP2021/031892 external-priority patent/WO2023032027A1/ja
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20240024994A publication Critical patent/KR20240024994A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/31053—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H10P52/407—Chemomechanical polishing [CMP] of conductive or resistive materials of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020247002677A 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 Pending KR20240024994A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPPCT/JP2021/031892 2021-08-31
PCT/JP2021/031894 WO2023032028A1 (ja) 2021-08-31 2021-08-31 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法
PCT/JP2021/031892 WO2023032027A1 (ja) 2021-08-31 2021-08-31 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法
JPPCT/JP2021/031894 2021-08-31
JP2022088818 2022-05-31
JPJP-P-2022-088818 2022-05-31
PCT/JP2022/032452 WO2023032929A1 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Publications (1)

Publication Number Publication Date
KR20240024994A true KR20240024994A (ko) 2024-02-26

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247002677A Pending KR20240024994A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
KR1020237043099A Pending KR20240006690A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
KR1020247002680A Pending KR20240024995A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020237043099A Pending KR20240006690A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
KR1020247002680A Pending KR20240024995A (ko) 2021-08-31 2022-08-29 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법

Country Status (5)

Country Link
US (3) US20250187137A1 (https=)
EP (3) EP4339254A4 (https=)
JP (5) JP7729388B2 (https=)
KR (3) KR20240024994A (https=)
WO (3) WO2023032930A1 (https=)

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WO2025126439A1 (ja) * 2023-12-14 2025-06-19 株式会社レゾナック Ｃｍｐ研磨液及び研磨方法
WO2025126434A1 (ja) * 2023-12-14 2025-06-19 株式会社レゾナック Ｃｍｐ研磨液及び研磨方法
WO2026083515A1 (ja) * 2024-10-16 2026-04-23 株式会社レゾナック 研磨方法及びスラリ

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JPH0822970A (ja) 1994-07-08 1996-01-23 Toshiba Corp 研磨方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法

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JPH0822970A (ja) 1994-07-08 1996-01-23 Toshiba Corp 研磨方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法

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Publication number Publication date
JP7718493B2 (ja) 2025-08-05
WO2023032928A1 (ja) 2023-03-09
WO2023032930A1 (ja) 2023-03-09
KR20240024995A (ko) 2024-02-26
EP4379779A4 (en) 2024-11-20
JPWO2023032930A1 (https=) 2023-03-09
EP4379780A1 (en) 2024-06-05
KR20240006690A (ko) 2024-01-15
US20240282581A1 (en) 2024-08-22
WO2023032929A1 (ja) 2023-03-09
JP7750295B2 (ja) 2025-10-07
JP2025174985A (ja) 2025-11-28
EP4339254A4 (en) 2024-11-20
EP4379780A4 (en) 2024-12-25
US20240392162A1 (en) 2024-11-28
JPWO2023032929A1 (https=) 2023-03-09
JP7729388B2 (ja) 2025-08-26
JPWO2023032928A1 (https=) 2023-03-09
EP4379779A1 (en) 2024-06-05
US20250187137A1 (en) 2025-06-12
JP2025159069A (ja) 2025-10-17
EP4339254A1 (en) 2024-03-20

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