JPWO2023032930A1 - - Google Patents

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Publication number
JPWO2023032930A1
JPWO2023032930A1 JP2023545570A JP2023545570A JPWO2023032930A1 JP WO2023032930 A1 JPWO2023032930 A1 JP WO2023032930A1 JP 2023545570 A JP2023545570 A JP 2023545570A JP 2023545570 A JP2023545570 A JP 2023545570A JP WO2023032930 A1 JPWO2023032930 A1 JP WO2023032930A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023545570A
Other languages
Japanese (ja)
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JP7750295B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2021/031894 external-priority patent/WO2023032028A1/ja
Priority claimed from PCT/JP2021/031892 external-priority patent/WO2023032027A1/ja
Application filed filed Critical
Publication of JPWO2023032930A1 publication Critical patent/JPWO2023032930A1/ja
Priority to JP2025145114A priority Critical patent/JP2025174985A/ja
Application granted granted Critical
Publication of JP7750295B2 publication Critical patent/JP7750295B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H10P52/407—Chemomechanical polishing [CMP] of conductive or resistive materials of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2023545570A 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法 Active JP7750295B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025145114A JP2025174985A (ja) 2021-08-31 2025-09-02 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPPCT/JP2021/031892 2021-08-31
PCT/JP2021/031894 WO2023032028A1 (ja) 2021-08-31 2021-08-31 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法
PCT/JP2021/031892 WO2023032027A1 (ja) 2021-08-31 2021-08-31 研磨液、研磨方法、半導体部品の製造方法、及び、接合体の製造方法
JPPCT/JP2021/031894 2021-08-31
JP2022088818 2022-05-31
JP2022088818 2022-05-31
PCT/JP2022/032453 WO2023032930A1 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025145114A Division JP2025174985A (ja) 2021-08-31 2025-09-02 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023032930A1 true JPWO2023032930A1 (https=) 2023-03-09
JP7750295B2 JP7750295B2 (ja) 2025-10-07

Family

ID=85412291

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2023545568A Active JP7729388B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2023545570A Active JP7750295B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2023545569A Active JP7718493B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2025132417A Pending JP2025159069A (ja) 2021-08-31 2025-08-07 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2025145114A Pending JP2025174985A (ja) 2021-08-31 2025-09-02 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

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JP2023545568A Active JP7729388B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2023545569A Active JP7718493B2 (ja) 2021-08-31 2022-08-29 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2025132417A Pending JP2025159069A (ja) 2021-08-31 2025-08-07 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法
JP2025145114A Pending JP2025174985A (ja) 2021-08-31 2025-09-02 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Country Status (5)

Country Link
US (3) US20250187137A1 (https=)
EP (3) EP4339254A4 (https=)
JP (5) JP7729388B2 (https=)
KR (3) KR20240024994A (https=)
WO (3) WO2023032930A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025126439A1 (ja) * 2023-12-14 2025-06-19 株式会社レゾナック Ｃｍｐ研磨液及び研磨方法
WO2025126434A1 (ja) * 2023-12-14 2025-06-19 株式会社レゾナック Ｃｍｐ研磨液及び研磨方法
WO2026083515A1 (ja) * 2024-10-16 2026-04-23 株式会社レゾナック 研磨方法及びスラリ

Citations (9)

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JPH1094955A (ja) * 1996-08-01 1998-04-14 Nissan Chem Ind Ltd 表面改質された酸化第二セリウム粒子からなる研磨剤及び研磨方法
JP2002043259A (ja) * 2000-07-26 2002-02-08 Asahi Kasei Corp 金属膜研磨用組成物
WO2005110679A1 (ja) * 2004-05-19 2005-11-24 Nissan Chemical Industries, Ltd. 研磨用組成物
WO2011122415A1 (ja) * 2010-03-29 2011-10-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
WO2012165016A1 (ja) * 2011-06-01 2012-12-06 日立化成工業株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
US20160068711A1 (en) * 2013-04-17 2016-03-10 Samsung Sdi Co., Ltd. Organic Film CMP Slurry Composition and Polishing Method Using Same
JP2019057615A (ja) * 2017-09-21 2019-04-11 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法
JP2020023408A (ja) * 2018-08-06 2020-02-13 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液
JP2021014375A (ja) * 2019-07-11 2021-02-12 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液

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JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
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JPH10106982A (ja) * 1996-09-30 1998-04-24 Hitachi Chem Co Ltd 研磨方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
WO2001033620A1 (fr) * 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
JP2003228164A (ja) * 2002-02-06 2003-08-15 Fuji Photo Film Co Ltd 平版印刷版用原版
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CN102453439B (zh) * 2010-10-22 2015-07-29 安集微电子（上海）有限公司 一种化学机械抛光液
WO2016006631A1 (ja) * 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
CN107406752B (zh) * 2015-03-10 2020-05-08 日立化成株式会社 研磨剂、研磨剂用储存液和研磨方法
JP6878772B2 (ja) * 2016-04-14 2021-06-02 昭和電工マテリアルズ株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
CN106701020A (zh) * 2016-12-30 2017-05-24 东莞市淦宏信息科技有限公司 一种树脂镜片研磨液
EP3582252B1 (en) * 2017-02-08 2022-02-23 Showa Denko Materials Co., Ltd. Polishing method
JP6924616B2 (ja) * 2017-05-25 2021-08-25 ニッタ・デュポン株式会社 研磨用スラリー
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WO2019142292A1 (ja) * 2018-01-18 2019-07-25 日立化成株式会社 研磨液、研磨液セット及び研磨方法
JP7056728B2 (ja) * 2018-03-22 2022-04-19 昭和電工マテリアルズ株式会社 研磨液、研磨液セット及び研磨方法
WO2020170331A1 (ja) * 2019-02-19 2020-08-27 日立化成株式会社 研磨液及び研磨方法
KR20210142582A (ko) * 2019-03-22 2021-11-25 주식회사 다이셀 반도체 배선 연마용 조성물
JP7477964B2 (ja) * 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法
JP7370904B2 (ja) * 2020-03-05 2023-10-30 株式会社トッパンインフォメディア 半導体パッケージ基板の層間絶縁材料の研磨方法
WO2021210310A1 (ja) 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
JP7279850B2 (ja) * 2020-11-11 2023-05-23 株式会社レゾナック 研磨液及び研磨方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1094955A (ja) * 1996-08-01 1998-04-14 Nissan Chem Ind Ltd 表面改質された酸化第二セリウム粒子からなる研磨剤及び研磨方法
JP2002043259A (ja) * 2000-07-26 2002-02-08 Asahi Kasei Corp 金属膜研磨用組成物
WO2005110679A1 (ja) * 2004-05-19 2005-11-24 Nissan Chemical Industries, Ltd. 研磨用組成物
WO2011122415A1 (ja) * 2010-03-29 2011-10-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
WO2012165016A1 (ja) * 2011-06-01 2012-12-06 日立化成工業株式会社 Ｃｍｐ研磨液及び半導体基板の研磨方法
US20160068711A1 (en) * 2013-04-17 2016-03-10 Samsung Sdi Co., Ltd. Organic Film CMP Slurry Composition and Polishing Method Using Same
JP2019057615A (ja) * 2017-09-21 2019-04-11 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法
JP2020023408A (ja) * 2018-08-06 2020-02-13 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液
JP2021014375A (ja) * 2019-07-11 2021-02-12 日揮触媒化成株式会社 セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液

Also Published As

Publication number Publication date
JP7718493B2 (ja) 2025-08-05
WO2023032928A1 (ja) 2023-03-09
WO2023032930A1 (ja) 2023-03-09
KR20240024995A (ko) 2024-02-26
EP4379779A4 (en) 2024-11-20
EP4379780A1 (en) 2024-06-05
KR20240024994A (ko) 2024-02-26
KR20240006690A (ko) 2024-01-15
US20240282581A1 (en) 2024-08-22
WO2023032929A1 (ja) 2023-03-09
JP7750295B2 (ja) 2025-10-07
JP2025174985A (ja) 2025-11-28
EP4339254A4 (en) 2024-11-20
EP4379780A4 (en) 2024-12-25
US20240392162A1 (en) 2024-11-28
JPWO2023032929A1 (https=) 2023-03-09
JP7729388B2 (ja) 2025-08-26
JPWO2023032928A1 (https=) 2023-03-09
EP4379779A1 (en) 2024-06-05
US20250187137A1 (en) 2025-06-12
JP2025159069A (ja) 2025-10-17
EP4339254A1 (en) 2024-03-20

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