KR20240023207A - 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 - Google Patents

고체 촬상 소자 및 그 제조 방법, 및 전자 기기 Download PDF

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Publication number
KR20240023207A
KR20240023207A KR1020247004618A KR20247004618A KR20240023207A KR 20240023207 A KR20240023207 A KR 20240023207A KR 1020247004618 A KR1020247004618 A KR 1020247004618A KR 20247004618 A KR20247004618 A KR 20247004618A KR 20240023207 A KR20240023207 A KR 20240023207A
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KR
South Korea
Prior art keywords
charge
transfer transistor
pixel
type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247004618A
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English (en)
Korean (ko)
Inventor
타이이치로 와타나베
후미히코 코가
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20240023207A publication Critical patent/KR20240023207A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L27/14614—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H01L27/14603—
    • H01L27/1464—
    • H01L27/14641—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020247004618A 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 Pending KR20240023207A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-220141 2013-10-23
JP2013220141A JP6138661B2 (ja) 2013-10-23 2013-10-23 固体撮像素子およびその製造方法、並びに電子機器
PCT/JP2014/005203 WO2015059898A1 (en) 2013-10-23 2014-10-14 Solid state imaging device and manufacturing method therefor, and electronic apparatus
KR1020237004308A KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237004308A Division KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Publications (1)

Publication Number Publication Date
KR20240023207A true KR20240023207A (ko) 2024-02-20

Family

ID=51862495

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020247004618A Pending KR20240023207A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020167009789A Expired - Fee Related KR102318462B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020217033619A Active KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020237004308A Pending KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020167009789A Expired - Fee Related KR102318462B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020217033619A Active KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020237004308A Pending KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Country Status (5)

Country Link
US (1) US9985068B2 (https=)
JP (1) JP6138661B2 (https=)
KR (4) KR20240023207A (https=)
TW (1) TWI645551B (https=)
WO (1) WO2015059898A1 (https=)

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IT201600083804A1 (it) * 2016-08-09 2018-02-09 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore
WO2018083990A1 (ja) * 2016-11-02 2018-05-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像装置、並びに電子機器
FR3060250B1 (fr) * 2016-12-12 2019-08-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'image pour capter une image en 2d et une profondeur
KR102662585B1 (ko) 2017-01-09 2024-04-30 삼성전자주식회사 이미지 센서
KR102473149B1 (ko) 2017-11-13 2022-12-02 에스케이하이닉스 주식회사 이미지 센서
WO2019202858A1 (ja) * 2018-04-16 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
KR102446297B1 (ko) * 2018-05-02 2022-09-23 에스케이하이닉스 주식회사 엑스트라 트랜스퍼 트랜지스터 및 엑스트라 플로팅 디퓨전 영역을 포함하는 이미지 센서
US11330203B2 (en) 2018-07-24 2022-05-10 Sony Semiconductor Solutions Corporation Imaging device and electronic device
TWI840384B (zh) * 2018-07-31 2024-05-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
US10566359B1 (en) * 2018-08-22 2020-02-18 Omnivision Technologies, Inc. Variably biased isolation structure for global shutter pixel storage node
JP2020035916A (ja) 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP7280034B2 (ja) * 2018-12-03 2023-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
KR102560775B1 (ko) * 2018-12-20 2023-07-28 삼성전자주식회사 이미지 센서
KR102679205B1 (ko) * 2019-07-02 2024-06-28 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2021019171A (ja) 2019-07-24 2021-02-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
TWI865651B (zh) * 2019-11-18 2024-12-11 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
CN114830337A (zh) * 2019-12-25 2022-07-29 索尼半导体解决方案公司 光接收元件和光接收装置
WO2021235101A1 (ja) * 2020-05-20 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
TWI912406B (zh) * 2020-12-11 2026-01-21 日商索尼半導體解決方案公司 受光元件、受光裝置及電子機器
JP7626687B2 (ja) * 2021-08-19 2025-02-04 株式会社ジャパンディスプレイ 検出装置
JP2024123906A (ja) * 2023-03-02 2024-09-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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Also Published As

Publication number Publication date
US9985068B2 (en) 2018-05-29
KR102318462B1 (ko) 2021-10-28
WO2015059898A1 (en) 2015-04-30
KR20160077055A (ko) 2016-07-01
TWI645551B (zh) 2018-12-21
KR20230025932A (ko) 2023-02-23
JP2015082592A (ja) 2015-04-27
US20160268322A1 (en) 2016-09-15
JP6138661B2 (ja) 2017-05-31
TW201523853A (zh) 2015-06-16
KR20210130248A (ko) 2021-10-29
KR102499590B1 (ko) 2023-02-14

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