KR20240010555A - 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 - Google Patents
매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 Download PDFInfo
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Classifications
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
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- Junction Field-Effect Transistors (AREA)
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US16/260,095 US10840334B2 (en) | 2016-06-24 | 2019-01-28 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
US16/260,095 | 2019-01-28 | ||
US16/376,596 | 2019-04-05 | ||
US16/376,596 US10892356B2 (en) | 2016-06-24 | 2019-04-05 | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
KR1020237004563A KR102626266B1 (ko) | 2019-01-28 | 2020-01-28 | 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 |
PCT/US2020/015331 WO2020159934A1 (en) | 2019-01-28 | 2020-01-28 | Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
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KR1020247001387A KR20240010555A (ko) | 2019-01-28 | 2020-01-28 | 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 |
KR1020237004563A KR102626266B1 (ko) | 2019-01-28 | 2020-01-28 | 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 |
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US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
JP5758132B2 (ja) * | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
JP2012231002A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
JP2014520405A (ja) * | 2011-06-20 | 2014-08-21 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 電流アパーチャ垂直電子トランジスタ |
JP5653326B2 (ja) * | 2011-09-12 | 2015-01-14 | 株式会社東芝 | 窒化物半導体装置 |
US9024356B2 (en) * | 2011-12-20 | 2015-05-05 | Infineon Technologies Austria Ag | Compound semiconductor device with buried field plate |
US9728630B2 (en) * | 2014-09-05 | 2017-08-08 | Infineon Technologies Austria Ag | High-electron-mobility transistor having a buried field plate |
US10290566B2 (en) * | 2014-09-23 | 2019-05-14 | Infineon Technologies Austria Ag | Electronic component |
JP2017059786A (ja) * | 2015-09-18 | 2017-03-23 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US10192980B2 (en) * | 2016-06-24 | 2019-01-29 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
JP6677598B2 (ja) * | 2016-07-25 | 2020-04-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6996241B2 (ja) * | 2017-11-13 | 2022-01-17 | 富士通株式会社 | 化合物半導体装置及びその製造方法、電源装置、高周波増幅器 |
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KR102626266B1 (ko) | 2024-01-16 |
JP7248804B2 (ja) | 2023-03-29 |
KR20230025527A (ko) | 2023-02-21 |
EP3918636A1 (en) | 2021-12-08 |
EP3918636A4 (en) | 2023-03-08 |
JP2022519825A (ja) | 2022-03-25 |
WO2020159934A1 (en) | 2020-08-06 |
CN113950748A (zh) | 2022-01-18 |
KR20210119511A (ko) | 2021-10-05 |
JP2023041688A (ja) | 2023-03-24 |
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