KR20220136270A - 라디오 주파수 스위치 바이어싱 토폴로지들 - Google Patents

라디오 주파수 스위치 바이어싱 토폴로지들 Download PDF

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Publication number
KR20220136270A
KR20220136270A KR1020220040149A KR20220040149A KR20220136270A KR 20220136270 A KR20220136270 A KR 20220136270A KR 1020220040149 A KR1020220040149 A KR 1020220040149A KR 20220040149 A KR20220040149 A KR 20220040149A KR 20220136270 A KR20220136270 A KR 20220136270A
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KR
South Korea
Prior art keywords
fet
switch
series
gate
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020220040149A
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English (en)
Korean (ko)
Inventor
루이 레이 람
Original Assignee
스카이워크스 솔루션즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스카이워크스 솔루션즈, 인코포레이티드 filed Critical 스카이워크스 솔루션즈, 인코포레이티드
Publication of KR20220136270A publication Critical patent/KR20220136270A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H04B1/1615—Switching on; Switching off, e.g. remotely

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
KR1020220040149A 2021-03-31 2022-03-31 라디오 주파수 스위치 바이어싱 토폴로지들 Pending KR20220136270A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163169053P 2021-03-31 2021-03-31
US63/169,053 2021-03-31

Publications (1)

Publication Number Publication Date
KR20220136270A true KR20220136270A (ko) 2022-10-07

Family

ID=81449570

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220040149A Pending KR20220136270A (ko) 2021-03-31 2022-03-31 라디오 주파수 스위치 바이어싱 토폴로지들

Country Status (7)

Country Link
US (2) US11777499B2 (enExample)
JP (1) JP7724743B2 (enExample)
KR (1) KR20220136270A (enExample)
CN (1) CN115149935A (enExample)
DE (1) DE102022203190A1 (enExample)
GB (1) GB2607419B (enExample)
TW (1) TW202241062A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901243B2 (en) * 2013-11-12 2024-02-13 Skyworks Solutions, Inc. Methods related to radio-frequency switching devices having improved voltage handling capability
CN115580282A (zh) * 2022-10-31 2023-01-06 南京邮电大学 一种电感加载的超宽带半导体单刀双掷开关
CN116707503B (zh) * 2023-08-03 2023-12-01 中科海高(成都)电子技术有限公司 一种单刀双掷开关电路及工作方法、电子设备
US20250105861A1 (en) * 2023-09-22 2025-03-27 Northrop Grumman Systems Corporation Super-lattice castellated field effect transistor (slcfet) switch system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850553B2 (ja) 2006-03-28 2012-01-11 新日本無線株式会社 スイッチ回路
JP2008011503A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
JP4939857B2 (ja) 2006-07-04 2012-05-30 パナソニック株式会社 スイッチ回路
JP4902323B2 (ja) 2006-11-20 2012-03-21 パナソニック株式会社 半導体スイッチ回路
JP2012080247A (ja) 2010-09-30 2012-04-19 Renesas Electronics Corp 半導体装置および携帯電話機
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
US8933533B2 (en) * 2012-07-05 2015-01-13 Infineon Technologies Austria Ag Solid-state bidirectional switch having a first and a second power-FET
US9628075B2 (en) * 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
JP2014053853A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 高周波切替モジュール及び高周波切替回路
KR101901693B1 (ko) 2013-12-27 2018-09-27 삼성전기 주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
US10541682B2 (en) 2016-11-10 2020-01-21 Skyworks Solutions, Inc. Manifolded gate resistance network

Also Published As

Publication number Publication date
GB2607419A (en) 2022-12-07
DE102022203190A1 (de) 2022-10-06
JP2022159156A (ja) 2022-10-17
GB202204530D0 (en) 2022-05-11
TW202241062A (zh) 2022-10-16
US11777499B2 (en) 2023-10-03
CN115149935A (zh) 2022-10-04
US20220321119A1 (en) 2022-10-06
GB2607419B (en) 2024-05-01
JP7724743B2 (ja) 2025-08-18
US20240048143A1 (en) 2024-02-08
US12176893B2 (en) 2024-12-24

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20220331

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20250331

Comment text: Request for Examination of Application